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Электронный компонент: HMC374

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8
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC374
/
374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
General Description
Features
Functional Diagram
Single Supply: Vdd = +2.75 to +5.5V
Low Noise Figure: 1.5 dB
High Output IP3: +37 dBm
No External Matching Required
Electrical Specifi cations,
T
A
= +25 C, Vdd= +5V
Typical Applications
The HMC374 / HMC374E is ideal for:
Cellular/PCS/3G
WCS, MMDS & ISM
Fixed Wireless & WLAN
Private Land Mobie Radio
The HMC374 & HMC374E are general purpose broad
band Low Noise Amplifi ers (LNA) for use in the 0.3-3
GHz frequency range. The LNA provides 15 dB of gain
and a 1.5 dB noise fi gure from a single positive supply
of +2.75 to +5.5V. The low noise fi gure coupled with
a high P1dB (22 dBm) and high OIP3 (37 dBm) make
this part ideal for cellular applications. The compact
LNA design utilizes on-chip matching for repeatable
gain and noise fi
gure performance. To minimize
board area the design is offered in a low cost SOT26
package that occupies only 0.118" x 0.118".
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
0.3 - 1.0
1.0 - 2.0
2.0 - 3.0
GHz
Gain
12
15
10
13
6
9
dB
Gain Variation Over Temperature
0.01
0.02
0.01
0.02
0.01
0.02
dB/C
Noise Figure
1.5
1.9
1.6
2.0
1.8
2.2
dB
Input Return Loss
5
8
13
dB
Output Return Loss
7
9
9
dB
Output 1 dB Compression (P1dB)
22
22
22
dBm
Saturated Output Power (Psat)
23
23
23
dBm
Output Third Order Intercept (IP3)
37
37
37
dBm
Supply Current (Idd) (Vdd = +5V)
90
90
90
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
-20
-15
-10
-5
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
3.5
4
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
Broadband Gain & Return Loss
Gain vs. Temperature
Noise Figure vs. Temperature
Output IP3 vs. Temperature
0
4
8
12
16
20
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
+25C
+85C
-40C
RETURN LOSS(dB)
FREQUENCY (GHz)
-12
-10
-8
-6
-4
-2
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
+25C
+85C
-40C
RETURN LOSS(dB)
FREQUENCY (GHz)
0
1
2
3
4
5
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
+25C
+85C
-40C
NOISE FIGURE(dB)
FREQUENCY (GHz)
30
31
32
33
34
35
36
37
38
39
40
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
+25C
+85C
-40C
OIP3(dBm)
FREQUENCY (GHz)
HMC374
/
374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
P1dB vs. Temperature
Power Compression @ 2 GHz
Reverse Isolation vs. Temperature
Psat vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 2 GHz
9
11
13
15
17
19
21
23
25
0
1
2
3
4
5
6
7
8
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Gain
P1dB
Noise Figure
GAIN (dB), P1dB (dBm)
NOI
SE FI
GURE (dB)
Vdd (Vdc)
-5
0
5
10
15
20
25
30
35
-20
-15
-10
-5
0
5
10
15
Pout
Gain
PAE
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
-30
-25
-20
-15
-10
-5
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
+25C
+85C
-40C
Psat(dBm)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
+25C
+85C
-40C
P1dB(dBm)
FREQUENCY (GHz)
90
92
94
96
98
100
102
104
-20
-15
-10
-5
0
5
10
15
Idd (mA)
INPUT POWER (dBm)
Current vs. Power @ 2 GHz
HMC374
/
374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Drain Bias Voltage (Vdd)
+7.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
15 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 7.5 mW/C above 85 C)
0.488 W
Thermal Resistance
(channel to lead)
133 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
2.7
89
3.0
89
5.0
90
5.5
90
HMC374
/
374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC374
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H374
XXXX
HMC374E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
374E
XXXX
[1] Max peak refl ow temperature of 235 C
[2] Max peak refl ow temperature of 260 C
[3] 4-Digit lot number XXXX
Package Information
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8 - 144
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number
Function
Description
Interface Schematic
1,4
N/C
These pins may be connected to RF/DC ground.
Performance will not be affected.
2, 5
GND
These pins must be connected to RF/DC ground.
3
RFIN
This pin is DC coupled.
An off-chip DC blocking capacitor is required.
6
RFOUT
RF output and DC Bias for the output stage.
See application circuit for off-chip components.
Pin Descriptions
Application Circuit
Recommended Component Values
C1, C2
150 pF
C3
1,000 pF
C4
4.7 F
L1
27 nH
HMC374
/
374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
8
A
M
P
L
IF
IE
RS
-
S
M
T
8 - 145
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Evaluation PCB
The circuit board used in the fi nal application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads should be connected directly
to the ground plane similar to that shown above. A
sufficient number of VIA holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
List of Material for Evaluation PCB 109258
[1]
Item
Description
J1, J2
PCB Mount SMA Connector
J3, J4
DC Pin
C1, C2
150 pF Capacitor, 0402 Pkg.
C3
1000 pF Capacitor, 0603 Pkg.
C4
4.7 Capacitor, Tantalum
L1
27 nH Inductor, 0603 Pkg.
U1
HMC374 / HMC374E Amplifi er
PCB
[2]
109256 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
HMC374
/
374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405