MICROWAVE CORPORATION
8 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC375LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v01.0604
General Description
Features
Functional Diagram
The HMC375LP3 high dynamic range GaAs
PHEMT MMIC Low Noise Amplifi er is ideal for
GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz.
This LNA has been optimized to provide 0.9 dB
noise fi gure, 17 dB gain and +33 dBm output IP3
from a single supply of +5.0V @ 136mA. Input and
output return losses are 14 dB typical with the LNA
requiring minimal external components to optimize
the RF input match, RF ground and DC bias. The
HMC375LP3 shares the same package with the
HMC356LP3 and HMC372LP3 high IP3 LNAs.
A low cost, leadless 3x3 mm (LP3) SMT QFN
package houses the low noise amplifi er.
Noise Figure: 0.9 dB
+34 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0 V @ 136 mA
50 Ohm Matched Output
Electrical Specifi cations,
T
A
= +25 C, Vs = +5V
Typical Applications
The HMC375LP3 is ideal for
basestation receivers:
GSM, GPRS & EDGE
CDMA & W-CDMA
DECT
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1.8 - 1.9
1.9 - 2.0
2.0 - 2.1
2.1 - 2.2
GHz
Gain
16.5
18.5
15.5
17.5
15
17
13
15
dB
Gain Variation Over Temperature
0.014
0.021
0.014
0.021
0.014
0.021
0.014
0.021
dB/C
Noise Figure
1.0
1.35
0.95
1.2
0.9
1.2
0.9
1.3
dB
Input Return Loss
12
13
14
15
dB
Output Return Loss
13
16
11
8
dB
Reverse Isolation
35
34
34
34
dB
Output Power for
1dB Compression (P1dB)
16
18.5
16
18.5
15
18
14.5
17.5
dBm
Saturated Output Power (Psat)
19.5
19.5
19.5
19.5
dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
34
33.5
33
32.5
dBm
Supply Current (Idd)
136
136
136
136
mA
MICROWAVE CORPORATION
8 - 143
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC375LP3
Broadband Gain & Return Loss
Gain vs. Vdd
Gain vs. Temperature
v01.0604
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Reverse Isolation vs. Temperature
Noise Figure vs. Vdd
Noise Figure vs. Temperature
10
12
14
16
18
20
22
24
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
GAIN
(dB)
FREQUENCY (GHz)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
12
13
14
15
16
17
18
19
20
21
22
1.7
1.8
1.9
2
2.1
2.2
+4.5 V
+5.0 V
+5.5 V
GAIN
(dB)
FREQUENCY (GHz)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.7
1.8
1.9
2
2.1
2.2
+4.5 V
+5.0 V
+5.5 V
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-50
-45
-40
-35
-30
-25
-20
-15
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
5
10
15
20
25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 144
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC375LP3
v01.0604
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
Output IP3 vs. Vdd
Output IP3 vs. Temperature
P1dB & PSAT vs. Temperature
P1dB vs. Vdd
-25
-20
-15
-10
-5
0
1.7
1.8
1.9
2
2.1
2.2
+25 C
-40 C
+85 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
30
31
32
33
34
35
36
37
38
39
40
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
30
31
32
33
34
35
36
37
38
39
40
1.7
1.8
1.9
2
2.1
2.2
+4.5 V
+5.0 V
+5.5 V
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
14
15
16
17
18
19
20
21
22
23
24
1.7
1.8
1.9
2
2.1
2.2
+25 C
+85 C
-40 C
COMPRESSION (dBm)
FREQUENCY (GHz)
P1dB
PSAT
12
13
14
15
16
17
18
19
20
21
22
23
24
1.7
1.8
1.9
2
2.1
2.2
+4.5 V
+5.0 V
+5.5 V
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 145
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC375LP3
v01.0604
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 MHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
135
+5.0
136
+5.5
137
Drain Bias Voltage (Vdd1, Vdd2)
+8.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)
+15 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 15.6 mW/C above 85 C)
1.015 W
Thermal Resistance
(channel to ground paddle)
64.1 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. CHARACTERS TO BE HELVETICA MEDIUM, 0.35 HIGH, WHITE INK,
OR LASER MARK LOCATED APPROX. AS SHOWN.
7. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
8. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
9. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND
PATTERN.
MICROWAVE CORPORATION
8 - 146
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC375LP3
v01.0604
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Pin Number
Function
Description
Interface Schematic
1, 3, 4,
6-10,12,14,16
N/C
No connection necessary.
These pins may be connected to RF/DC ground.
2
RF IN
This pin is matched to 50 Ohms with a 13 nH
inductor to ground. See Application Circuit.
5
ACG
AC Ground - An external capacitor of 0.01F to
ground is required for low frequency bypassing.
See Application Circuit for further details.
11
RF OUT
This pin is AC coupled and matched to 50 Ohms.
13,15
Vdd2, Vdd1
Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
GND
Package bottom must be connected to RF/DC ground.
Pin Descriptions
Application Circuit
Note: L1, L2, L3 and C1 should be located as close to pins as possible.
PDF 
ZIP