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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC376LP3
/
376LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
v00.1005
General Description
Features
Functional Diagram
The HMC376LP3 & HMC376LP3E are GaAs PHEMT
MMIC Low Noise Amplifi ers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The amplifi er
has been optimized to provide 0.7 dB noise fi gure,
15 dB gain and +36 dBm output IP3 from a single
supply of +5.0V. Input and output return losses are 14
and 12 dB respectively and the LNA requires only one
external component to optimize the RF Input match.
The HMC376LP3 & HMC376LP3E share the same
package and pinout with the HMC382LP3 1.7 - 2.2
GHz LNA. The HMC376LP3 & HMC376LP3E feature
an externally adjustable supply current which allows
the designer to tailor the linearity performance of the
LNA for each application.
Noise Figure: 0.7 dB
Output IP3: +36 dBm
Gain: 15 dB
Externally Adjustable Supply Current
Single Positive Supply: +5.0V
50 Ohm Matched Input/Output
Electrical Specifications,
T
A
= +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications
The HMC376LP3 / HMC376LP3E is ideal for:
Cellular/3G Infrastructure
Base Stations & Repeaters
CDMA, W-CDMA, & TD-SCDMA
Private Land Mobile Radio
GSM/GPRS & EDGE
UHF Reallocation Applications
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
810 - 960
700 - 1000
MHz
Gain
12.5
14.5
11.5
14.5
dB
Gain Variation Over Temperature
0.005
0.01
0.005
0.01
dB / C
Noise Figure
0.7
1.0
0.7
1.0
dB
Input Return Loss
13
14
dB
Output Return Loss
12
12
dB
Reverse Isolation
20
22
dB
Output Power for 1dB Compression (P1dB)
21.5
21
dBm
Saturated Output Power (Psat)
22
22
dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
36
36
dBm
Supply Current (Idd)
73
73
mA
*Rbias resistor value sets current, see application circuit herein.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Broadband Gain & Return Loss
Gain vs. Temperature
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.25
0.5
0.75
1
1.25
1.5
1.75
2
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
HMC376LP3
/
376LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
v00.1005
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.6
0.7
0.8
0.9
1
1.1
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.6
0.7
0.8
0.9
1
1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.6
0.7
0.8
0.9
1
1.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
10
11
12
13
14
15
16
17
18
19
20
0.6
0.7
0.8
0.9
1
1.1
+25C
+85C
- 40C
GAIN
(dB)
FREQUENCY (GHz)
Output Return Loss vs. Temperature
-25
-20
-15
-10
-5
0
0.6
0.7
0.8
0.9
1
1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
HMC376LP3
/
376LP3E
v00.1005
P1dB vs. Temperature @ Idd = 73 mA
Psat vs. Temperature @ Idd = 73 mA
Output IP3 vs. Temperature @ Idd = 73 mA
15
16
17
18
19
20
21
22
23
24
25
0.7
0.75
0.8
0.85
0.9
0.95
1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
30
31
32
33
34
35
36
37
38
39
40
0.7
0.75
0.8
0.85
0.9
0.95
1
+25 C
+85 C
-40 C
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
0.7
0.75
0.8
0.85
0.9
0.95
1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
Gain, Noise Figure &
Power vs. Supply Current @ 900 MHz
12
14
16
18
20
22
24
0.4
0.6
0.8
1
60
70
80
90
100
110
120
GAIN
P1dB
Noise figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY CURRENT (mA)
Typical Supply Current vs. Vdd
with Rbias = 10 Ohms
Vdd (Vdc)
Idd (mA)
+4.5
73.0
+5.0
73.4
+5.5
73.6
Drain Bias Voltage (Vdd)
+8.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)
+15 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 11.83 mW/C above 85 C)
0.769 W
Thermal Resistance
(channel to ground paddle)
84.5 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Absolute Maximum Ratings
Idd (mA)
Rbias (Ohms)
60
12
70
10
80
9.1
100
6.8
120
5.1
Recommended Bias Resistor Values
for Various Idd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
HMC376LP3
/
376LP3E
v00.1005
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC376LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H376
XXXX
HMC376LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H376
XXXX
[1] Max peak refl ow temperature of 235 C
[2] Max peak refl ow temperature of 260 C
[3] 4-Digit lot number XXXX
Package Information
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number
Function
Description
Interface Schematic
1, 4, 5, 7, 9,
12 - 14, 16
N/C
No connection necessary. These pins may be connected
to RF/DC ground. Performance will not be affected.
2
RFIN
This pin is matched to 50 Ohms with a 47 nH
inductor to ground. See application circuit.
3, 6, 10
GND
These pins and package bottom must be
connected to RF/DC ground.
8
Res
This pin is used to set the DC current of the amplifi er
by selection of external bias resistor.
See application circuit.
11
RFOUT
This pin is AC coupled and matched
to 50 Ohms from 0.7 - 1.0 GHz.
15
Vdd
Power supply voltage. Choke inductor and bypass
capacitors are required. See application circuit.
Pin Descriptions
Application Circuit
Note 1: L1, L2 and C1 should be located as close to the pins as possible.
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
HMC376LP3
/
376LP3E
v00.1005
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