MICROWAVE CORPORATION
8 - 150
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC407MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
v01.1202
General Description
Features
Functional Diagram
The HMC407MS8G is a high effi ciency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifi er which operates between
5 and 7 GHz. The amplifi er requires no external
matching to achieve operation and is thus truly 50
Ohm matched at input and output. The amplifi er
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF
and thermal performance. The amplifi er provides
15 dB of gain, +29 dBm of saturated power at
28% PAE from a +5.0V supply voltage. Power
down capability is available to conserve current
consumption when the amplifi er is not in use.
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5.0 V
Power Down Capability
No External Matching Required
Electrical Specifi cations,
T
A
= +25 C, Vs = 5V, Vpd = 5V
Typical Applications
This amplifi er is ideal for use as a power
amplifi er for 5.0 - 7.0 GHz applications:
UNII
HiperLAN
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5.0 - 7.0
5.6 - 6.0
GHz
Gain
10
15
18
12
15
18
dB
Gain Variation Over Temperature
0.025
0.035
0.025
0.035
dB/ C
Input Return Loss
12
12
dB
Output Return Loss
15
15
dB
Output Power for 1 dB Compression (P1dB)
21
25
22
25
dBm
Saturated Output Power (Psat)
29
29
dBm
Output Third Order Intercept (IP3)
32
37
36
40
dBm
Noise Figure
5.5
5.5
dB
Supply Current (Icq)
Vpd = 0V/5V
0.002 / 230
0.002 / 230
mA
Control Current (Ipd)
Vpd = 5V
7
7
mA
Switching Speed
tON, tOFF
30
30
ns
MICROWAVE CORPORATION
8 - 151
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
20
2
3
4
5
6
7
8
9
10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
4
4.5
5
5.5
6
6.5
7
7.5
8
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4
4.5
5
5.5
6
6.5
7
7.5
8
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
4
4.5
5
5.5
6
6.5
7
7.5
8
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC407MS8G
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
v01.1202
Broadband Gain & Return Loss
Gain vs. Temperature
14
16
18
20
22
24
26
28
30
32
34
4
4.5
5
5.5
6
6.5
7
7.5
8
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
32
34
4
4.5
5
5.5
6
6.5
7
7.5
8
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
MICROWAVE CORPORATION
8 - 152
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
4
4.5
5
5.5
6
6.5
7
7.5
8
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
Power Compression @ 5.8 GHz
Output IP3 vs. Temperature
HMC407MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
v01.1202
0
1
2
3
4
5
6
7
8
9
10
5
5.5
6
6.5
7
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage
8
9
10
11
12
13
14
15
16
17
18
20
21
22
23
24
25
26
27
28
29
30
4.75
5
5.25
GAIN (dB)
P1dB, Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
-50
-40
-30
-20
-10
0
4
4.5
5
5.5
6
6.5
7
7.5
8
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
4
4.5
5
5.5
6
6.5
7
7.5
8
ISOLATION (dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Power Down Isolation
MICROWAVE CORPORATION
8 - 153
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC407MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
v01.1202
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
5
10
15
20
25
30
0
50
100
150
200
250
2.5
3
3.5
4
4.5
5
P1dB
Psat
Gain
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq (mA)
Vpd (Vdc)
Collector Bias Voltage (Vcc1, Vcc2)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+20 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 31 mW/C above 85 C)
2 W
Thermal Resistance
(junction to ground paddle)
32 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
8 - 154
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Pin Number
Function
Description
Interface Schematic
1
Vcc1
Power supply voltage for the fi rst amplifi er stage. An external bypass capacitor of
330 pF is required as shown in the application schematic.
2
Vpd
Power control pin. For maximum power, this pin should be connected to 5.0V. A
higher voltage is not recommended. For lower die current, this voltage can be
reduced.
3, 6, 7
GND
Ground: Backside of package has exposed metal ground slug that must be con-
nected to ground thru a short path. Vias under the device are required.
4
RF IN
This pin is AC coupled and matched to 50 Ohms from 5.0 to 7.0 GHz.
5
RF OUT
This pin is AC coupled and matched to 50 Ohms from 5.0 to 7.0 GHz.
8
Vcc2
Power supply voltage for the output amplifi er stage. An external bypass capacitor
of 330 pF is required. This capacitor should be placed no more than 20 mils form
package lead.
HMC407MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
v01.1202
Pin Descriptions
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