8 - 172
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC409LP4
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v000.0904
General Description
Features
Functional Diagram
The HMC409LP4 is a high effi ciency GaAs
InGaP HBT MMIC Power amplifi er operating
between 3.3 to 3.8 GHz. The amplifi er is pack-
aged in a low cost, leadless SMT package.
Utilizing a minimum of external components
the amplifi er provides 31 dB of gain and +32.5
dBm of saturated power from a +5.0V supply
voltage. The power control (Vpd) can be used
for full power down or RF output power/current
control. The HMC409LP4 combines high gain and
linearity to meet WiMAX 802.16 requirements.
Gain: 31 dB
40% PAE @ +32.5 dBm pout
+46 dBm Output IP3
Integrated Power Control (Vpd)
Single +5V Supply
Electrical Specifi cations,
T
A
= +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
Typical Applications
This amplifi er is ideal for use as a power
amplifi er for 3.3 - 3.8 GHz applications:
WiMAX 802.16
Fixed Wireless Access
Wireless Local Loop
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
3.3 - 3.4
3.4 - 3.6
3.6 - 3.8
GHz
Gain
30
32
29
31.5
28
30
dB
Gain Variation Over Temperature
0.04
0.05
0.04
0.05
0.035
0.045
dB/ C
Input Return Loss
10
15
15
dB
Output Return Loss
13
14
10
dB
Output Power for 1dB Compression (P1dB)
28
30
28
30.5
28
30.5
dBm
Saturated Output Power (Psat)
32
32.5
32
dBm
Output Third Order Intercept (IP3)
41
45
42
45.5
41
45
dBm
Noise Figure
5.8
5.8
6
dB
Supply Current (Icq) Vs= Vcc1 + Vcc2= +5V
615
615
615
mA
Control Current (Ipd) Vpd = +5V
4
4
4
mA
Switching Speed tOn, tOff
20
20
20
ns
Bias Current (Ibias)
10
10
10
mA
Note 1: Specifi cations and data refl ect HMC409LP4 measured using the application circuit found herein. Contact the HMC Applications Group for assis-
tance in optimizing performance for your application.
Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.
8 - 173
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC409LP4
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v000.0904
Broadband Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Power Down Isolation vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
2
2.5
3
3.5
4
4.5
5
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
38
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
8 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
P1dB vs. Temperature
Psat vs. Temperature
HMC409LP4
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v000.0904
Output IP3 vs. Temperature
Power Compression @ 3.5GHz
Gain & Power vs. Supply Voltage
Noise Figure vs. Temperature
22
24
26
28
30
32
34
36
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
22
24
26
28
30
32
34
36
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
PSAT (dBm)
FREQUENCY (GHz)
30
32
34
36
38
40
42
44
46
48
50
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
36
40
-20
-16
-12
-8
-4
0
4
8
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
28
29
30
31
32
33
34
35
4.75
5
5.25
Gain
Psat
P1dB
GAIN (dB), P1dB
(dBm, Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
0
1
2
3
4
5
6
7
8
9
10
11
12
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
8 - 175
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC409LP4
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v000.0904
Gain, Power & Quiescent
Supply Current vs. Vpd @ 3.5 GHz
26
28
30
32
34
36
500
520
540
560
580
600
620
640
660
680
700
4.75
5
5.25
Gain
Psat
P1dB
Icc
GAIN (dB), P1dB (d
Bm), Psat (dBm)
Ic
q (mA)
Vpd (Vdc)
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
4.2
4.4
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
POWER DISSIPATION (W)
INPUT POWER (dBm)
Max Pdiss @ +85C
Power Dissipation
8 - 176
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC409LP4
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v000.0904
Outline Drawing
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+15 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 57.5 mW/C above 85 C)
3.74 W
Thermal Resistance
(junction to ground paddle)
17.4 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Vs (Vdc)
Icq (mA)
4.75
580
5.0
615
5.25
690
Typical Supply
Current vs. Supply Voltage
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