MICROWAVE CORPORATION
8 - 174
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC414MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v02.1202
General Description
Features
Functional Diagram
The HMC414MS8G is a high effi ciency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifi er which operates between
2.2 and 2.8 GHz. The amplifi er is packaged in
a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifi er provides 20 dB of gain,
+30 dBm of saturated power at 32% PAE from
a +5.0V supply voltage. The amplifi er can also
operate with a 3.6V supply. Vpd can be used for
full power down or RF output power/current con-
trol.
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5.0 V
Power Down Capability
Low External Part Count
Electrical Specifi cations,
T
A
= +25 C, As a Function of Vs, Vpd = 3.6V
Typical Applications
This amplifi er is ideal for use as a power
amplifi er for 2.2 - 2.7 GHz applications:
BLUETOOTH
MMDS
Parameter
Vs = 3.6V
Vs = 5.0V
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2.2 - 2.8
2.2 - 2.8
GHz
Gain
17
20
25
17
20
25
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
dB/ C
Input Return Loss
8
8
dB
Output Return Loss
9
9
dB
Output Power for 1 dB Compression (P1dB)
21
25
23
27
dBm
Saturated Output Power (Psat)
27
30
dBm
Output Third Order Intercept (IP3)
30
35
35
39
dBm
Noise Figure
6.5
7.0
dB
Supply Current (Icq)
Vpd = 0V / 3.6V
0.002 / 240
0.002 / 300
mA
Control Current (Ipd)
Vpd = 3.6V
7
7
mA
Switching Speed
tON, tOFF
45
45
ns
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC414MS8G
Return Loss, Vs= 3.6V
Return Loss, Vs= 5.0V
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v02.1202
Gain vs. Temperature, Vs= 3.6V
Gain vs. Temperature, Vs= 5.0V
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 3.6V
P1dB vs. Temperature, Vs= 5.0V
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
-14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
-14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
HMC414MS8G
Power Compression@ 2.4 GHz, Vs= 3.6V
Power Compression@ 2.4 GHz, Vs= 5.0V
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v02.1202
Psat vs. Temperature, Vs= 3.6V
Psat vs. Temperature, Vs= 5.0V
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
Output IP3 vs. Temperature, Vs= 3.6V
Output IP3 vs. Temperature, Vs= 5.0V
MICROWAVE CORPORATION
8 - 177
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-40
-35
-30
-25
-20
-15
-10
-5
0
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC414MS8G
Noise Figure vs. Temperature, Vs= 3.6V
Noise Figure vs. Temperature, Vs= 5.0V
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v02.1202
Reverse Isolation
vs. Temperature, Vs= 3.6V
18
19
20
21
22
23
24
25
26
27
28
14
16
18
20
22
24
26
28
30
32
34
2.75
3.25
3.75
4.25
4.75
5.25
Gain
P1dB
Psat
GAIN dB)
P1dB, Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
Gain & Power vs. Supply Voltage
Power Down Isolation, Vs= 3.6V
Gain, Power & Quiescent
Supply Current vs Vpd@ 2.4 GHz
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
40
80
120
160
200
240
280
320
360
400
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
Gain
P1dB
Psat
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq (mA)
Vpd (Vdc)
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Outline Drawing
Absolute Maximum Ratings
HMC414MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v02.1202
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd1, Vpd2)
+4.0 Vdc
RF Input Power (RFin)(Vs = +5.0,
Vpd = +3.6 Vdc)
+20 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 27 mW/C above 85 C)
1.755 W
Thermal Resistance
(junction to ground paddle)
37 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
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