ChipFind - документация

Электронный компонент: HMC427LP3

Скачать:  PDF   ZIP
MICROWAVE CORPORATION
14 - 242
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC427LP3
GaAs MMIC POSITIVE CONTROL
TRANSFER SWITCH, DC* - 8.0 GHz
v05.0604
General Description
Features
Functional Diagram
The HMC427LP3 is a low loss broadband posi-
tive control transfer switch in a leadless surface
mount package. Covering DC to 8 GHz, this
switch offers high isolation and low insertion loss.
The switch operates using a positive control volt-
age of 0/+5V and requires a fi xed bias of +5V @
< 20 A.
High Isolation: 40 ~ 45 dB thru 6 GHz
Low Insertion Loss: 1.2 dB@ 6 GHz
Non-Refl ective Design
3 mm x 3 mm x 1 mm SMT Package
Electrical Specifi cations,
T
A
= +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications
The HMC427LP3 is ideal for:
Test Instrumentation
Fiber Optics & Broadband Telecom
Basestation Infrastructure
Microwave Radio & VSAT
Military Radios, Radar, & ECM
* Blocking capacitors are required at ports RF1, 2, 3,
& 4. Their value will determine the lowest transmission
frequency.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 6.0 GHz
DC - 8.0 GHz
1.2
1.6
1.6
2.1
dB
dB
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
42
37
33
27
48
42
38
32
dB
dB
dB
dB
Return Loss
DC - 6.0 GHz
DC - 8.0 GHz
14
12
17
15
dB
dB
Input Power for 1 dB Compression
1.0 - 8.0 GHz
23
26
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
1.0 - 8.0 GHz
37
43
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
2
4
ns
ns
MICROWAVE CORPORATION
14 - 243
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-5
-4
-3
-2
-1
0
0
1
2
3
4
5
6
7
8
9
+25 C
+85 C
-40 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
9
RF4 to RF1
RF2 to RF3
RF4 to RF2
RF1 to RF3
ISOLATION (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
9
RF1
RF2
RF3
RF4
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
1
2
3
4
5
6
7
8
9
1 dB Compression Point
0.1 dB Compression Point
INPUT COMPRESSION POINT (dBm)
FREQUENCY (GHz)
20
25
30
35
40
45
50
1
2
3
4
5
6
7
8
9
+25 C
+85 C
-40 C
INPUT THIRD ORDER INTERCEPT POINT (dBm)
FREQUENCY (GHz)
HMC427LP3
Input Third Order Intercept Point
v05.0604
Return Loss
0.1 and 1 dB Input Compression Point
Insertion Loss vs. Temperature
Isolation
GaAs MMIC POSITIVE CONTROL
TRANSFER SWITCH, DC* - 8.0 GHz
MICROWAVE CORPORATION
14 - 244
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC427LP3
v05.0604
GaAs MMIC POSITIVE CONTROL
TRANSFER SWITCH, DC* - 8.0 GHz
Truth Table
Control Voltages
Bias Voltage & Current
Vdd Range = +5.0 Vdc 10 %
Vdd
(Vdc)
Idd (Typ.)
(A)
Idd (Max.)
(A)
+5.0
5
10
State
Bias Condition
Low
0 to +0.2 Vdc @ 5 A Typical
High
Vdd 0.2 Vdc @ 5 A Typical
Control Input
Signal Path State
A
B
RF4 to
RF2
RF1 to
RF3
RF4 to
RF1
RF2 to
RF3
Low
High
On
On
Off
Off
High
Low
Off
Off
On
On
MICROWAVE CORPORATION
14 - 245
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC427LP3
v05.0604
GaAs MMIC POSITIVE CONTROL
TRANSFER SWITCH, DC* - 8.0 GHz
Absolute Maximum Ratings
Outline Drawing
Bias Voltage Range (Vdd)
+7.0 Vdc
Control Voltage Range (A & B)
-0.5V to Vdd +1.0 Vdc
Channel Temperature
150 C
Thermal Resistance
130 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Maximum Input Power
+27 dBm
Note:
DC blocking capacitors are required at ports RF1, 2, 3,
& 4. Their value will determine the lowest transmission
frequency.
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND
PATTERN.
MICROWAVE CORPORATION
14 - 246
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC427LP3
v05.0604
GaAs MMIC POSITIVE CONTROL
TRANSFER SWITCH, DC* - 8.0 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 4, 9, 12
RF4, RF1, RF3,
RF2
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required.
2, 3, 5, 8, 10, 11, 13,
14, 16
N/C
This pin should be connected to PCB RF ground to maximize
isolation.
GND
Package bottom has exposed metal paddle that must be con-
nected to PCB RF ground.
6
CTRLA
See truth table and control voltage table.
7
CTRLB
See truth table and control voltage table.
15
VDD
Supply Voltage +5V 10%.