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Электронный компонент: HMC435MS8G

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MICROWAVE CORPORATION
14 - 230
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC435MS8G
SPDT NON-REFLECTIVE
SWITCH, DC - 4.0 GHz
v01.0503
General Description
Features
Functional Diagram
High Isolation: 60 dB @ 1 GHz
50 dB @ 2 GHz
Positive Control: 0/+5V
51 dBm Input IP3
Non-Refl ective Design
MS8G SMT Package, 14.8 mm
2
Typical Applications
The HMC435MS8G is ideal for:
Basestation Infrastructure
MMDS & 3.5 GHz WLL
CATV/CMTS
Test Instrumentation
The HMC435MS8G is a non-refl ective DC to 4
GHz GaAs MESFET SPDT switch in a low cost
8 lead MSOP8G surface mount package with an
exposed ground paddle. The switch is ideal for
cellular/PCS/3G basestation applications yielding
50 to 60 dB isolation, low 0.8 dB insertion loss and
+50 dBm input IP3. Power handling is excellent
up through the 3.5 GHz WLL band with the switch
offering a P1dB compression point of +31 dBm.
On-chip circuitry allows positive voltage control of
0/+5 Volts at very low DC currents.
Electrical Specifi cations,
T
A
= +25 C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
0.8
1.2
1.5
1.0
1.5
1.8
dB
dB
dB
Isolation (RFC to RF1/RF2)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
56
46
43
37
30
60
50
47
41
35
dB
dB
dB
dB
dB
Return Loss (On State)
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
15
13
11
20
17
15
dB
dB
dB
Return Loss (Off State)
0.5 - 4.0 GHz
16
21
dB
Input Power for 1 dB Compression
0.5 - 4.0 GHz
27
31
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
48
45
41
51
48
45
dBm
Switching Speed
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
60
ns
ns
MICROWAVE CORPORATION
14 - 231
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-5
-4
-3
-2
-1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
+ 25C
+ 85C
- 40C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
RF1
RF2
ISOLATION (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
RFC
RF1, RF2 OFF
RF1, RF2 ON
RETURN LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC435MS8G
SPDT NON-REFLECTIVE
SWITCH, DC - 4.0 GHz
v01.0503
Return Loss
Insertion Loss
Isolation Between
Ports RFC and RF1 / RF2
15
20
25
30
35
0
0.5
1
1.5
2
2.5
3
3.5
4
1 dB Compression Point
0.1 dB Compression Point
INPUT COMPRESSION (dBm)
FREQUENCY (GHz)
0.1 and 1 dB Input Compression Point
40
42
44
46
48
50
52
54
56
58
60
0
0.5
1
1.5
2
2.5
3
3.5
4
+25 C
+85 C
-40 C
INPUT IP3 (dBm)
FREQUENCY (GHz)
Input Third Order Intercept Point
Isolation Between Ports RF1 and RF2
-70
-60
-50
-40
-30
-20
-10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
RFC - RF1 ON
RFC - RF2 ON
ISOLATION (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
14 - 232
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC435MS8G
SPDT NON-REFLECTIVE
SWITCH, DC - 4.0 GHz
v01.0503
Truth Table
DC blocks are required at ports RFC, RF1, RF2.
Do not operate continuously at RF power input greater
than 1 dB compression and do not "Hot Switch" power
levels greater than +24 dBm (control = 0/+5 Vdc).
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Control Voltage Range
-0.5 to +7.5 Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
RF Input Power Vctl = 0/+5V
+31 dBm
Control Input
Signal Path State
A
B
RFC to:
Low
High
RF1
High
Low
RF2
Outline Drawing
Control Voltages
*Control Input Tolerances are 0.2 Vdc
State
Bias Condition*
Low
0 Vdc @ 25 A Typical
High
+5 Vdc @ 25 A Typical
MICROWAVE CORPORATION
14 - 233
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC435MS8G
SPDT NON-REFLECTIVE
SWITCH, DC - 4.0 GHz
v01.0503
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
A
See truth and control voltage tables.
2
B
See truth and control voltage tables.
3, 5, 8
RFC, RF1, RF2
These pins are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
4
N/C
Not Connected
6, 7
GND
Package bottom has exposed metal paddle that must
be connected to PCB RF ground as well.
MICROWAVE CORPORATION
14 - 234
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC435MS8G
SPDT NON-REFLECTIVE
SWITCH, DC - 4.0 GHz
v01.0503
Evaluation PCB
The circuit board used in the fi nal application should
be generated with proper RF circuit design techniques.
Signal lines at the RF port should have 50 ohm imped-
ance and the package ground leads and backside
ground slug should be connected directly to the ground
plane similar to that shown above. The evaluation circuit
board shown above is available from Hittite Microwave
Corporation upon request.
List of Material
Item
Description
J1 - J3
PC Mount SMA RF Connector
J4 - J7
DC Pin
C1 - C3
100 pF Capacitor, 0402 Pkg.
R1 - R2
100 Ohm Resistor, 0402 Pkg.
U1
HMC435MS8G SPDT Switch
PCB*
104122 Evaluation PCB
* Circuit Board Material: Rogers 4350
Note: Pin J6 is unused and need not be connected.