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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
17.5 - 21.0
21.0 - 24.0
24.0 - 25.5
GHz
Gain
10
13
10
13
8
11
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.02
0.03
dB/ C
Input Return Loss
10
10
5
dB
Output Return Loss
9
9
12
dB
Output Power for 1 dB Compression (P1dB)
18
21
19
22
19
22
dBm
Saturated Output Power (Psat)
23
23.5
23
dBm
Output Third Order Intercept (IP3)
27
26
26
dBm
Noise Figure
8
8
9
dB
Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.)
84
84
84
mA
HMC442LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
v00.1104
General Description
Features
Functional Diagram
The HMC442LC3B is an effi cient GaAs PHEMT
MMIC Medium Power Amplifi er housed in a leadless
"Pb free" RoHS compliant SMT package. Operating
between 17.5 and 25.5 GHz, the amplifi er provides
13 dB of gain, +23 dBm of saturated power and 26%
PAE from a +5.0 V supply voltage. This 50 Ohm
matched amplifi er does not require any external
components, making it an ideal linear gain block
or driver for HMC SMT mixers. The HMC442LC3B
allows the use of surface mount manufacturing
techniques.
Gain: 13 dB
Saturated Power: +23 dBm @ 26% PAE
Supply Voltage: +5.0 V
50 Ohm Matched Input/Output
RoHS Compliant 3 x 3 mm SMT package
Electrical Specifi cations,
T
A
= +25 C, Vdd = +5V, Idd = 84 mA*
Typical Applications
The HMC442LC3B is an ideal gain block or driver
amp for:
Point-to-Point Radios
Point-to-Multi-Point Radios
LO Driver for HMC Mixers
Military EW & ECM
*Adjust Vgg between -1.5 to -0.5V to achieve Idd = 84 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Psat vs. Temperature
Output Return Loss vs. Temperature
HMC442LC3B
-20
-15
-10
-5
0
5
10
15
14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
16
17
18
19
20
21
22
23
24
25
26
27
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
16
17
18
19
20
21
22
23
24
25
26
27
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
16
17
18
19
20
21
22
23
24
25
26
27
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
v00.1104
Broadband Gain & Return Loss
10
12
14
16
18
20
22
24
26
28
30
16
17
18
19
20
21
22
23
24
25
26
27
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
16
17
18
19
20
21
22
23
24
25
26
27
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
Gain vs. Temperature
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
v00.1104
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 18 GHz
Output IP3 vs. Temperature
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
4.5
5
5.5
GAIN
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vdd Supply Voltage (Vdc)
Noise Figure vs. Temperature
Gain, Power and OIP3 vs.
Supply Voltage @ 23 GHz
-60
-50
-40
-30
-20
-10
0
16
17
18
19
20
21
22
23
24
25
26
27
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
14
16
18
20
22
24
26
28
30
32
34
16
17
18
19
20
21
22
23
24
25
26
27
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
16
17
18
19
20
21
22
23
24
25
26
27
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
Power Compression @ 23 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442LC3B
v00.1104
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-8.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc,
Idd = 85 mA)
+20 dBm
Channel Temperature
175 C
Continuous Pdiss (T = 85 C)
(derate 5.46 mW/C above 85 C)
0.491 W
Thermal Resistance
(channel to ground paddle)
183 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
ESD Sensitivity (HBM)
Class 1A
Vdd (V)
Idd (mA)
+4.5
82
+5.0
84
+5.5
86
Note: Amplifi er will operate over full voltage range shown above
Typical Supply Current vs. Vdd
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
NOTES:
1. MATERIAL: PLASTIC
2. PLATING: GOLD OVER NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. ALL TOLERANCES ARE 0.005 [0.13].
5. ALL GROUNDS MUST BE SOLDERED TO PCB RF GROUND.
6.
INDICATES PIN 1.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
v00.1104
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 3, 7, 9
GND
Package bottom must also be connected to RF/DC ground
2
RFIN
This pin is AC coupled and matched to 50 Ohms from
17.5 - 25.5 GHz
4, 6, 10, 12
N/C
This pin may be connected to RF/DC ground.
Performance will not be affected.
5
Vgg
Gate control for amplifi er. Adjust to achieve Id of 84 mA.
Please follow "MMIC Amplifi er Biasing Procedure"
Application Note.
8
RFOUT
This pin is AC coupled and matched to 50 Ohms from
17.5 - 25.5 GHz
11
Vdd
Power Supply Votage for the amplifi er. External bypass
capacitors are required.
Application Circuit
Component
Value
C1, C2
100 pF
C3, C4
1,000 pF
C5, C6
2.2 F
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
v00.1104
Evaluation PCB
The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
suffi cient number of VIA holes should be used to con-
nect the top and bottom ground planes. The evalua-
tion board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
List of Material for Evaluation PCB 109712*
Item
Description
J1 - J2
PC Mount SMA Connector
J3 - J6
DC Pin
C1 - C2
100 pF Capacitor, 0402 Pkg.
C3 - C4
1000 pF Capacitor, 0603 Pkg.
C5 - C6
2.2 F Capacitor, Tantalum
U1
HMC442LC3B Amplifi er
PCB**
109710 Evaluation PCB
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
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