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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC451
v00.0305
General Description
Features
Functional Diagram
The HMC451 is a general purpose GaAs PHEMT
MMIC Medium Power Amplifi er which operates
between 5.0 and 20.0 GHz. The amplifi
er
provides 22 dB of gain, +22 dBm of saturated
power and 24% PAE from a +5.0 V supply
voltage. Consistent gain and output power
across the operating band make it possible to
use a common driver/LO amplifi er approach
in multiple radio bands. The HMC451 amplifi er
can easily be integrated into Multi-Chip-Modules
(MCMs) due to its small (1.32mm
2
) size. The
backside of the die is both RF and DC ground,
simplifying the assembly process and reducing
performance variation. All data is tested with
the chip in a 50 Ohm test fi xture connected via
0.025mm (1 mil) diameter wire bonds of minimal
Gain: 22 dB
Saturated Output Power: +22 dBm @ 24% PAE
Output IP3: +30 dBm
Single Supply Voltage +5.0 V @ 127 mA
50 Ohm Matched Input/Output
Electrical Specifi cations,
T
A
= +25 C, Vdd1, Vdd2 = +5V
Typical Applications
The HMC451 is ideal for use as a driver amplifi er
for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment & Sensors
LO Driver for HMC Mixers
Military & Space
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5 - 15
15 - 18
18 - 20
GHz
Gain
19
22
17
20
15
18
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
0.03
0.04
dB/ C
Input Return Loss
14
11
8
dB
Output Return Loss
16
11
8
dB
Output Power for 1 dB
Compression (P1dB)
17
20
17
20
17
20
dBm
Saturated Output Power (Psat)
22
21
21
dBm
Output Third Order Intercept (IP3)
32
30
30
dBm
Noise Figure
7
6
6.5
dB
Supply Current (Idd)
127
127
127
mA
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.0 - 20.0 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC451
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
Broadband Gain & Return Loss
Gain vs. Temperature
P1dB vs. Temperature
Psat vs. Temperature
v00.0305
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
3
5
7
9
11
13
15
17
19
21
23
25
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
GAIN
(dB)
FREQUENCY (GHz)
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.0 - 20.0 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Power Compression @ 10 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage @ 10 GHz
Reverse Isolation vs. Temperature
Power Compression @ 20 GHz
HMC451
v00.0305
0
1
2
3
4
5
6
7
8
9
10
11
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
36
38
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
OIP3 (dBm)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
18
19
20
21
22
23
24
25
4.5
5
5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (d
Bm), Psat (dBm)
Vdd Supply Voltage (Vdc)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.0 - 20.0 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+10 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 13 mW/C above 85 C)
1.2 W
Thermal Resistance
(channel to die bottom)
75 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (V)
Idd (mA)
+4.5
125
+5.0
127
+5.5
129
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC451
v00.0305
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.0 - 20.0 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
RF IN
This pad is AC coupled and matched to 50 Ohms from
5 - 20 GHz.
2, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF and 0.1 F are required.
4
RF OUT
This pad is AC coupled and matched to 50 Ohms from
5 - 20 GHz.
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND PAD IS .004" SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC451
v00.0305
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.0 - 20.0 GHz
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