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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC451LC3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
v00.0605
General Description
Features
Functional Diagram
The HMC451LC3 is an effi
cient GaAs PHEMT
MMIC Medium Power Amplifi er housed in a leadless
RoHS compliant SMT package. Operating between
5 and 20 GHz, the amplifi er provides 19 dB of gain,
+21 dBm of saturated power and 21% PAE from a single
+5.0V supply. This 50 Ohm matched amplifi er does
not require any external components and the RF I/O's
are DC blocked, making it an ideal linear gain block
or driver for HMC SMT mixers. The HMC451LC3 allows
the use of surface mount manufacturing techniques.
Gain: 19 dB
Saturated Power: +21 dBm @ 21% PAE
Output IP3: +30 dBm
Single Supply: +5.0 V @ 114 mA
50 Ohm Matched Input/Output
RoHS Compliant 3 x 3mm SMT package
Electrical Specifications,
T
A
= +25 C, Vdd = +5V
Typical Applications
The HMC451LC3 is ideal for use as a medium power
amplifi er for:
Microwave Radio & VSAT
Military & Space
Test Equipment & Sensors
Fiber Optics
LO Driver for HMC Mixers
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5 -15
15 - 18
18 - 20
GHz
Gain
16
19
15
18
14
17
dB
Gain Variation Over Temperature
0.015
0.025
0.015
0.025
0.015
0.025
dB/ C
Input Return Loss
13
13
12
dB
Output Return Loss
12
8
8
dB
Output Power for 1 dB
Compression (P1dB)
16.5
19.5
16
19
16.5
19.5
dBm
Saturated Output Power (Psat)
21
20.5
21
dBm
Output Third Order Intercept (IP3)
32
29
29
dBm
Noise Figure
7
6.5
7
dB
Supply Current (Idd)
114
114
114
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
Broadband Gain & Return Loss
Gain vs. Temperature
P1dB vs. Temperature
Psat vs. Temperature
HMC451LC3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
v00.0605
-20
-15
-10
-5
0
5
10
15
20
25
3
5
7
9
11
13
15
17
19
21
23
25
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Power Compression @ 10 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Gain, P1dB & PSAT
vs. Supply Voltage @ 11 GHz
Reverse Isolation vs. Temperature
Power Compression @ 20 GHz
HMC451LC3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
v00.0605
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
16
18
20
22
24
26
28
30
32
34
36
38
40
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
16
17
18
19
20
21
22
4.5
5
5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (d
Bm), Psat (dBm)
Vdd Supply Voltage (Vdc)
-60
-50
-40
-30
-20
-10
0
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+10 dBm
Channel Temperature
175 C
Continuous Pdiss (T = 85 C)
(derate 10 mW/C above 85 C)
0.9 W
Thermal Resistance
(channel to ground paddle)
100 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Vdd (V)
Idd (mA)
+4.5
111
+5.0
114
+5.5
116
Note: Amplifi er will operate over full voltage range shown above
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50
MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Typical Supply Current vs. Vdd
HMC451LC3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
v00.0605
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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5
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 4 - 9, 11,
12, 14, 15
N/C
This pin may be connected to RF/DC ground.
Performance will not be affected.
3
RFIN
This pin is AC coupled and matched
to 50 Ohms from 5 - 20 GHz.
10
RFOUT
This pin is AC coupled and matched
to 50 Ohms from 5 - 20 GHz.
13
Vdd2
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 F are required.
16
Vdd1
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 F are required.
GND
Package bottom must be connected to RF/DC ground.
Component
Value
C1, C2
100 pF
C3, C4
1,000 pF
C5, C6
2.2 F
Application Circuit
HMC451LC3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
v00.0605
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