MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC452QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
General Description
Features
Functional Diagram
The HMC452QS16G is a high dynamic range
GaAs InGaP Heterojunction Bipolar Transistor
(HBT) 1 watt MMIC power amplifi er operating
between 0.45 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the
amplifi er gain is typically 15.5 dB from 0.8 to 1.0
GHz and 10 dB from 1.8 to 2.0 GHz. Utilizing a
minimum number of external components and
a single +5V supply, the amplifi er output IP3
can be optimized to +48 dBm at 0.9 GHz and
1.9 GHz. The power control (VPD) can be used
for full power down or RF output power/current
control. The high output IP3 and PAE makes the
HMC452QS16G an ideal power amplifi er for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Output IP3: +48 dBm
Gain: 15.5 dB @ 900 MHz
46% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm
2
Electrical Specifi cations,
T
A
= +25C, Vs= +5V, VPD = +5V (note 1)
Typical Applications
The HMC452QS16G is ideal for applications requiring
a high dynamic range amplifi er:
GSM, GPRS & EDGE
CDMA & W-CDMA
CATV/Cable Modem
Fixed Wireless & WLL
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
810 - 960
1710 - 1990
MHz
Gain
13
15.5
7.5
10
dB
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
dB / C
Input Return Loss
9
17
dB
Output Return Loss
12
15
dB
Output Power for 1dB Compression (P1dB)
27
30
28
31
dBm
Saturated Output Power (Psat)
31
31.5
dBm
Output Third Order Intercept (IP3) (note 2)
45
48
45
48
dBm
Noise Figure
7
7
dB
Supply Current (Icq)
485
485
mA
Control Current (IPD)
10
10
mA
Note 1: Specifi cations and data refl ect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Note 2: Two-tone input power of -10 dBm per tone, 1 MHz spacing.
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC452QS16G
Input Return Loss
vs. Temperature @ 900 MHz
Output Return Loss
vs. Temperature @ 900 MHz
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
Broadband Gain
& Return Loss @ 900 MHz
Gain vs. Temperature @ 900 MHz
P1dB vs. Temperature @ 900 MHz
Psat vs. Temperature @ 900 MHz
-20
-15
-10
-5
0
5
10
15
20
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
GAIN
(dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 228
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC452QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
Output IP3 vs. Temperature @ 900 MHz
Noise Figure vs. Temperature @ 900 MHz
Gain, Power & IP3
vs. Supply Voltage @ 900 MHz
Reverse Isolation
vs. Temperature @ 900 MHz
ACPR vs. Supply Voltage @ 910 MHz
CDMA IS95, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 900 MHz*
34
36
38
40
42
44
46
48
50
52
54
0.75
0.8
0.85
0.9
0.95
1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
50
55
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
10
15
20
25
30
35
40
45
50
55
250
300
350
400
450
500
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Icq (mA)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
12
14
16
18
20
22
24
26
28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
CDMA IS95
Frequency: 910 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
5.5V
4.5V
5V
* Icq is controlled by varying VPD.
MICROWAVE CORPORATION
8 - 229
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC452QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
Input Return Loss
vs. Temperature @ 1900 MHz
Output Return Loss
vs. Temperature @ 1900 MHz
Broadband Gain
& Return Loss @ 1900 MHz
Gain vs. Temperature @ 1900 MHz
P1dB vs. Temperature @ 1900 MHz
Psat vs. Temperature @ 1900 MHz
-25
-20
-15
-10
-5
0
5
10
15
1.2
1.4
1.6
1.8
2
2.2
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
GAIN
(dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 230
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Output IP3 vs. Temperature @ 1900 MHz
Noise Figure
vs. Temperature @ 1900 MHz
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
Reverse Isolation
vs. Temperature @ 1900 MHz
HMC452QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 1900 MHz
0
1
2
3
4
5
6
7
8
9
10
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
34
36
38
40
42
44
46
48
50
52
54
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
55
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
250
300
350
400
450
500
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Icq (mA)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
14
16
18
20
22
24
26
28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
5.5V
4.5V
5V
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