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MICROWAVE CORPORATION
8 - 238
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC453QS16G
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
General Description
Features
Functional Diagram
The HMC453QS16G is a high dynamic range
GaAs InGaP Heterojunction Bipolar Transistor
(HBT) 1.6 watt MMIC power amplifi er operating
between 0.45 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the
amplifi er gain is typically 15 dB from 0.8 to 1.0
GHz and 9 dB from 1.8 to 2.0 GHz. Utilizing a
minimum number of external components and a
single +5V supply, the amplifi er output IP3 can be
optimized to +49 dBm at 0.9 GHz or +50 dBm at
1.9 GHz. The power control (VPD) can be used
for full power down or RF output power/current
control. The high output IP3 and PAE makes the
HMC453QS16G an ideal power amplifi er for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Output IP3: +50 dBm
Gain: 15 dB @ 900 MHz
42% PAE @ +32 dBm Pout
+25 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm
2
Electrical Specifi cations,
T
A
= +25C, Vs= +5V, VPD = +5V (note 1)
Typical Applications
The HMC453QS16G is ideal for applications requiring
a high dynamic range amplifi er:
GSM, GPRS & EDGE
CDMA & W-CDMA
CATV/Cable Modem
Fixed Wireless & WLL
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
810 - 960
1710 - 1990
MHz
Gain
12
15
6
9
dB
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
dB / C
Input Return Loss
12
10
dB
Output Return Loss
15
13
dB
Output Power for 1dB Compression (P1dB)
29
32
28.5
31.5
dBm
Saturated Output Power (Psat)
32.5
32
dBm
Output Third Order Intercept (IP3) (note 2)
46
49
44
50
dBm
Noise Figure
7
7.5
dB
Supply Current (Icq)
725
725
mA
Control Current (IPD)
12
12
mA
Note 1: Specifi cations and data refl ect HMC453QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Note 2: Two-tone input power of -10 dBm per tone, 1 MHz spacing.
MICROWAVE CORPORATION
8 - 239
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC453QS16G
Input Return Loss
vs. Temperature @ 900 MHz
Output Return Loss
vs. Temperature @ 900 MHz
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
Broadband Gain
& Return Loss @ 900 MHz
Gain vs. Temperature @ 900 MHz
P1dB vs. Temperature @ 900 MHz
Psat vs. Temperature @ 900 MHz
-15
-10
-5
0
5
10
15
20
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
GAIN
(dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 240
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC453QS16G
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
Output IP3 vs. Temperature @ 900 MHz
Noise Figure vs. Temperature @ 900 MHz
Gain, Power & IP3
vs. Supply Voltage @ 900 MHz
Reverse Isolation
vs. Temperature @ 900 MHz
ACPR vs. Supply Voltage @ 910 MHz
CDMA IS95, 9 Channels Forward
34
36
38
40
42
44
46
48
50
52
54
0.75
0.8
0.85
0.9
0.95
1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
50
55
480
520
560
600
640
680
720
760
800
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Icq (mA)
10
15
20
25
30
35
40
45
50
55
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
Gain, Power & IP3
vs. Supply Current @ 900 MHz*
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
12
14
16
18
20
22
24
26
28
30
ACPR (dBc)
Channel Power (dBm)
Source ACPR
CDMA IS95
Frequency: 910 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
5.5V
4.5V
5V
* Icq is controlled by varying VPD.
MICROWAVE CORPORATION
8 - 241
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC453QS16G
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
Input Return Loss
vs. Temperature @ 1900 MHz
Output Return Loss
vs. Temperature @ 1900 MHz
Broadband Gain
& Return Loss @ 1900 MHz
Gain vs. Temperature @ 1900 MHz
P1dB vs. Temperature @ 1900 MHz
Psat vs. Temperature @ 1900 MHz
-15
-10
-5
0
5
10
15
1.2
1.4
1.6
1.8
2
2.2
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
GAIN
(dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 242
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Output IP3 vs. Temperature @ 1900 MHz
Noise Figure
vs. Temperature @ 1900 MHz
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
Reverse Isolation
vs. Temperature @ 1900 MHz
HMC453QS16G
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 1900 MHz
34
36
38
40
42
44
46
48
50
52
54
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1.7
1.8
1.9
2
2.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
55
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
55
480
520
560
600
640
680
720
760
800
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Icq (mA)
-70
-65
-60
-55
-50
-45
-40
-35
-30
14
16
18
20
22
24
26
28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
5.5V
4.5V
5V
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