MICROWAVE CORPORATION
8 - 264
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC455LP3
InGaP HBT Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
v01.0604
General Description
Features
Functional Diagram
The HMC455LP3 is a high output IP3 GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
watt MMIC amplifi er operating between 1.7
and 2.5 GHz. Utilizing a minimum number of
external components the amplifi er provides 13
dB of gain and +28 dBm of saturated power at
56% PAE from a single +5 Vdc supply voltage.
The high output IP3 of +42 dBm coupled with
the low VSWR of 1.4:1 makes the HMC455LP3
an ideal driver amplifi er for PCS/3G wireless
infrastructure. A low cost, leadless 3x3 mm QFN
surface mount package (LP3) houses the linear
amplifi er. The LP3 provides an exposed base for
excellent RF and thermal performance.
Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3 x 3 x 1 mm QFN SMT Package
Electrical Specifi cations,
T
A
= +25 C, Vs= +5V
Typical Applications
This amplifi er is ideal for high linearity applications:
Multi-Carrier Systems
GSM, GPRS & EDGE
CDMA & WCDMA
PHS
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1.7 - 1.9
1.9 - 2.2
2.2 - 2.5
GHz
Gain
11.5
13.5
10.5
13
9
11.5
dB
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
0.012
0.02
dB / C
Input Return Loss
13
15
10
dB
Output Return Loss
10
18
15
dB
Output Power for 1dB Compression (P1dB)
24
27
24.5
27.5
23
26
dBm
Saturated Output Power (Psat)
28.5
28
27
dBm
Output Third Order Intercept (IP3)
37
40
39
42
37
40
dBm
Noise Figure
7
6
6
dB
Supply Current (Icq)
150
150
150
mA
MICROWAVE CORPORATION
8 - 265
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
1
1.5
2
2.5
3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC455LP3
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
InGaP HBT Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
v01.0604
Broadband Gain & Return Loss
Gain vs. Temperature
20
21
22
23
24
25
26
27
28
29
30
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
20
21
22
23
24
25
26
27
28
29
30
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
MICROWAVE CORPORATION
8 - 266
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC455LP3
GaAs InGaP HBT Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
v01.0604
0
4
8
12
16
20
24
28
32
36
40
44
48
52
56
60
-10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16 18 20
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
Power Compression @ 1.95 GHz
Output IP3 vs. Temperature
0
1
2
3
4
5
6
7
8
9
10
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Gain, Power & IP3 vs.
Supply Voltage @ 1.95 GHz
-30
-25
-20
-15
-10
-5
0
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
8
12
16
20
24
28
32
36
40
44
4.5
4.7
5
5.2
5.5
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
0
4
8
12
16
20
24
28
32
36
40
44
48
52
56
60
-10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16 18 20
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 2.15 GHz
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
MICROWAVE CORPORATION
8 - 267
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
ACPR vs. Supply Voltage @ 1.96 GHz
CDMA 2000, 9 Channels Forward
HMC455LP3
GaAs InGaP HBT Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
v01.0604
-65
-60
-55
-50
-45
-40
-35
-30
5
7
9
11
13
15
17
19
21
ACPR (dBc)
Channel Output Power (dBm)
Source ACPR
WCDMA
Frequency : 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
4.5V
5V
5.5V
ACPR vs. Supply Voltage @ 2.14 GHz
W-CDMA, 64 DPCH
-65
-60
-55
-50
-45
-40
5
7
9
11
13
15
17
19
21
ACPR (dBc)
Channel Output Power (dBm)
Source ACPR
CDMA2000 Rev. 8
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
5.5V
4.5V
5V
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
MICROWAVE CORPORATION
8 - 268
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC455LP3
GaAs InGaP HBT Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
v01.0604
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND
PATTERN.
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)
+30 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 16 mW/C above 85 C)
1.04 W
Thermal Resistance
(junction to ground paddle)
63 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
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