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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC459
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
v00.0204
General Description
Features
Functional Diagram
The HMC459 is a GaAs MMIC PHEMT Distrib-
uted Power Amplifi er die which operates between
DC and 18 GHz. The amplifi er provides 17 dB
of gain, +31.5 dBm output IP3 and +25 dBm of
output power at 1 dB gain compression while
requiring 290 mA from a +8V supply. Gain fl at-
ness is good making the HMC459 ideal for EW,
ECM and radar driver amplifi er applications. The
HMC459 amplifi er I/O's are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fi xture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
+25 dBm P1dB Output Power
Gain: 17 dB
+31.5 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
Typical Applications
The HMC459 wideband driver is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Electrical Specifi cations,
T
A
= +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min
Typ
Max
Units
Frequency Range
DC - 2.0
DC - 6.0
DC - 10.0
DC - 18.0
GHz
Gain
16.5
18.5
15
18
14
17
9
12
dB
Gain Flatness
0.5
0.75
0.75
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.03
0.04
0.035
0.045
dB/ C
Input Return Loss
22
19.5
19
10
dB
Output Return Loss
27
15
14
14
dB
Output Power for 1 dB
Compression (P1dB)
21
24
20.5
24.5
22
25
14
17
dBm
Saturated Output Power (Psat)
26.5
26.5
26.5
21
dBm
Output Third Order Intercept (IP3)
40
34
31.5
26
dBm
Noise Figure
4.0
4.0
3.0
6.5
dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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AMPLIFIERS - CHIP
1
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC459
Output Return Loss vs. Temperature
v00.0204
Gain & Return Loss
Gain vs. Temperature
Input Return Loss vs. Temperature
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
0
2
4
6
8
10
12
14
16
18
20
+25 C
+85 C
-55 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
+25 C
+85 C
-55 C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
+25 C
+85 C
-55 C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
+25 C
+85 C
-55 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
0.00001
0.0001
0.001
0.01
0.1
1
10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
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AMPLIFIERS - CHIP
1
HMC459
v00.0204
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & OIP3
vs. Supply Voltage @ 5 GHz, Fixed Vgg
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
38
40
42
44
0
2
4
6
8
10
12
14
16
18
20
+25 C
+85 C
-55 C
OIP3 (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
32
34
36
7.5
8
8.5
GAIN (dB)
P1dB (dBm)
PSAT (dBm)
OIP3 (dBm)
GAIN (dB), P1dB (dBm),
PSAT (dBm), OIP3 (dBm)
Vdd SUPPLY VOLTAGE (Vdc)
Reverse Isolation vs. Temperature
-70
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
12
14
16
18
20
+25 C
+85 C
-55 C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
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AMPLIFIERS - CHIP
1
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)
(Vdd -8.0) Vdc to Vdd
RF Input Power (RFin)(Vdd = +8.0 Vdc)
+23 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 51.5 mW/C above 85 C)
4.64 W
Thermal Resistance
(channel to die bottom)
19.4 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (V)
Idd (mA)
+7.5
292
+8.0
290
+8.5
288
Typical Supply Current vs. Vdd
HMC459
v00.0204
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
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AMPLIFIERS - CHIP
1
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is AC coupled and matched to 50 Ohms
from DC - 20.0 GHz
2
Vgg2
Gate Control 2 for amplifi er. +3V should be applied to Vgg2
for nominal operation. Vgg2 may be adjusted between 0 to
+5V to temperature compensate gain.
4
RFOUT & Vdd
RF output for amplifi er. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
5
Vgg1
Gate Control 1 for amplifi er. Adjust between -2 to 0V
to achieve Idd= 290 mA.
3
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit here in.
6
ACG2
Low frequency termination. Attach bypass capacitor per
application circuit here in.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC459
v00.0204
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
HMC459
v00.0204
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
Assembly Diagram
Application Circuit
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Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC459
v00.0204
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding
Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing RF
to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised
0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to
attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached
to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-
substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffl e or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and
fl at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
Notes:
HMC459
v00.0204
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
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