MICROWAVE CORPORATION
1 - 112
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC465
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
v03.0704
General Description
Features
Functional Diagram
The HMC465 is a GaAs MMIC PHEMT Distrib-
uted Driver Amplifi er die which operates between
DC and 20 GHz. The amplifi er provides 17 dB of
gain, 2.5 dB noise fi gure and +24 dBm of saturated
output power while requiring only 160 mA from a
+8V supply. Gain fl atness is excellent at 0.25 dB
as well as +/- 1 deg deviation from linear phase
from DC - 10 GHz making the HMC465 ideal for
OC192 fi ber optic LN/MZ modulator driver ampli-
fi er as well as test equipment applications. The
HMC465 amplifi er I/Os are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fi xture connected via 0.025 mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Gain: 17 dB
Output Voltage to 10Vpk-pk
+24 dBm Saturated Output Power
Supply Voltage: +8V @160 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
Typical Applications
The HMC465 wideband driver is ideal for:
OC192 LN/MZ Modulator Driver
Telecom Infrastructure
Test Instrumentation
Military & Space
Electrical Specifi cations,
T
A
= +25 C, Vdd= 8V, Vgg2= 1.5V, Idd= 160 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 6.0
6.0 - 12.0
12.0 - 20.0
GHz
Gain
15
18
15
17
13
16.5
dB
Gain Flatness
0.5
0.25
0.5
dB
Gain Variation Over Temperature
0.015
0.025
0.015
0.025
0.02
0.03
dB/ C
Noise Figure
3.0
5.0
2.5
3.5
3.0
4.5
dB
Input Return Loss
18
20
16
dB
Output Return Loss
18
17
17
dB
Output Power for 1 dB Compression (P1dB)
19.5
22.5
19
22
17
20
dBm
Saturated Output Power (Psat)
24
24
22
dBm
Output Third Order Intercept (IP3)
33
30
26
dBm
Saturated Output Voltage
10
10
8
Vpk-pk
Group Delay Variation
3
3
3
pSec
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.6V Typ.)
160
160
160
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 160 mA typical.
MICROWAVE CORPORATION
1 - 113
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC465
Output Return Loss vs. Temperature
v03.0704
Gain & Return Loss
Gain vs. Temperature
Low Frequency Gain & Return Loss
Input Return Loss vs. Temperature
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0
2
4
6
8
10
12
14
16
18
20
22
24
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
GAIN
(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.00001
0.0001
0.001
0.01
0.1
1
10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
1 - 114
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC465
v03.0704
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & OIP3 vs. Supply Voltage
@ 10 GHz, Idd= 160mA
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
38
40
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
OIP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
36
40
5.5
6
6.5
7
7.5
8
8.5
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vdd SUPPLY VOLTAGE (Vdc)
Group Delay
Deviation from Linear Phase
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
9
10
GROUP DELAY (pS)
FREQUENCY (GHz)
-5
-4
-3
-2
-1
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
DEVIATION FROM LINEAR PHASE (deg)
FREQUENCY (GHz)
MICROWAVE CORPORATION
1 - 115
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC465
v03.0704
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)
(Vdd -8.0) Vdc to Vdd
RF Input Power (RFin)(Vdd = +8.0 Vdc)
+23 dBm
Channel Temperature
175 C
Continuous Pdiss (T = 85 C)
(derate 24 mW/C above 85 C)
2.17 W
Thermal Resistance
(channel to die bottom)
41.5 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (V)
Idd (mA)
+7.5
161
+8.0
160
+8.5
159
Typical Supply Current vs. Vdd
MICROWAVE CORPORATION
1 - 116
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC465
v03.0704
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is DC coupled and matched to 50 Ohms
from DC - 20.0 GHz
2
Vgg2
Gate Control 2 for amplifi er. +1.5V should be applied to
Vgg2 for nominal operation.
3
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit herein.
4
ACG2
5
RFOUT & Vdd
RF output for amplifi er. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
6
ACG3
Low frequency termination. Attach bypass capacitor per
application circuit herein.
7
ACG4
8
Vgg1
Gate Control 2 for amplifi er.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
MICROWAVE CORPORATION
1 - 117
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC465
v03.0704
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Assembly Diagram
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
MICROWAVE CORPORATION
1 - 118
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC465
v03.0704
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
MICROWAVE CORPORATION
1 - 119
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC465
v03.0704
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and
fl at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
PDF 
ZIP