ChipFind - документация

Электронный компонент: HMC465LP5

Скачать:  PDF   ZIP
MICROWAVE CORPORATION
8 - 274
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC465LP5
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
v00.0404
General Description
Features
Functional Diagram
The HMC465LP5 is a GaAs MMIC PHEMT Dis-
tributed Driver Amplifi er packaged in a leadless
5 x 5 mm surface mount package which operates
between DC and 20 GHz. The amplifi er provides
15 dB of gain, 3 dB noise fi gure and +25 dBm of
saturated output power while requiring only 160
mA from a +8V supply. Gain fl atness is excel-
lent at 0.25 dB as well as +/- 4 deg deviation
from linear phase from DC - 10 GHz making the
HMC465LP5 ideal for OC192 fi ber optic LN/MZ
modulator driver amplifi er as well as test equip-
ment applications. The HMC465LP5 amplifi er
I/Os are internally matched to 50 Ohms.
Gain: 15 dB
Output Voltage to 10Vpk-pk
+24 dBm Saturated Output Power
Supply Voltage: +8V @160 mA
50 Ohm Matched Input/Output
25mm
2
Leadless SMT Package
Typical Applications
The HMC465LP5 wideband driver is ideal for:
OC192 LN/MZ Modulator Driver
Microwave Radio & VSAT
Test Instrumentation
Military EW, ECM & C
3
I
Electrical Specifi cations,
T
A
= +25 C, Vdd= 8V, Vgg2= 1.5V, Idd= 160 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 6.0
6.0 - 12.0
12.0 - 20.0
GHz
Gain
13
16
12
15
9.5
12.5
dB
Gain Flatness
0.75
0.25
1.5
dB
Gain Variation Over Temperature
0.015
0.02
0.020
0.025
0.035
0.045
dB/ C
Noise Figure
3.0
3.0
4.0
dB
Input Return Loss
20
15
8
dB
Output Return Loss
22
17
12
dB
Output Power for 1 dB Compression (P1dB)
21
24
20
23
16
20
dBm
Saturated Output Power (Psat)
25.5
25
23
dBm
Output Third Order Intercept (IP3)
32
28
24
dBm
Saturated Output Voltage
10
10
8
Vpk-pk
Group Delay Variation
15
15
pSec
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.6V Typ.)
160
160
160
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 160 mA typical.
MICROWAVE CORPORATION
8 - 275
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC465LP5
Output Return Loss vs. Temperature
v00.0404
Gain & Return Loss
Gain vs. Temperature
Low Frequency Gain & Return Loss
Input Return Loss vs. Temperature
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0
2
4
6
8
10
12
14
16
18
20
22
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.00001
0.0001
0.001
0.01
0.1
1
10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 276
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC465LP5
v00.0404
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & OIP3 vs. Supply Voltage
@ 10 GHz, Idd= 160mA
Group Delay
Deviation from Linear Phase
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
36
38
40
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
32
7.5
8
8.5
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
SUPPLY VOLTAGE (Vdc)
-400
-350
-300
-250
-200
0
1
2
3
4
5
6
7
8
9
10
GROUP DELAY (pS)
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10
DEVIATION FROM LINEAR PHASE (deg)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 277
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC465LP5
v00.0404
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GRPUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT
SHALL BE 0.25mm MAX
7. PACKAGE WRAP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)
(Vdd -8.0) Vdc to Vdd
RF Input Power (RFin)(Vdd = +8.0 Vdc)
+23 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 24 mW/C above 85 C)
1.56 W
Thermal Resistance
(channel to ground paddle)
41.5 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Vdd (V)
Idd (mA)
+7.5
161
+8.0
160
+8.5
159
Typical Supply Current vs. Vdd
MICROWAVE CORPORATION
8 - 278
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC465LP5
v00.0404
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Pad Number
Function
Description
Interface Schematic
1, 3, 4, 6-12,
14, 17, 18,
20, 22-28,
31, 32
N/C
No connection. These pins may be connected to RF
ground. Performance will not be affected.
2
Vgg2
Gate Control 2 for amplifi er. +1.5V should be applied to
Vgg2 for nominal operation.
5
RFIN
This pad is DC coupled and matched to 50 Ohms
from DC - 20.0 GHz.
13
Vgg1
Gate Control 1 for amplifi er.
15
ACG4
Low frequency termination. Attach bypass capacitor
per application circuit herein.
16
ACG3
21
RFOUT & Vdd
RF output for amplifi er. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
29
ACG2
Low frequency termination. Attach bypass capacitor
per application circuit herein.
30
ACG1
Ground
Paddle
GND
Ground paddle must be connected to RF/DC ground.
Pad Descriptions
MICROWAVE CORPORATION
8 - 279
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC465LP5
v00.0404
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
MICROWAVE CORPORATION
8 - 280
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
The circuit board used in the fi nal application should use
RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown. A suffi cient number of
VIA holes should be used to connect the top and bottom
ground planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108347 *
Item
Description
J1 - J2
SRI K Connector
J3 - J4
2mm Molex Header
C1, C2
100 pF Capacitor, 0402 Pkg.
C3 - C6
1000 pF Capacitor, 0603 Pkg.
C7 - C9
4.7 F Capacitor, Tantalum
U1
HMC465LP5
PCB**
108345 Evaluation PCB
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
Evaluation PCB
HMC465LP5
v00.0404
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
MICROWAVE CORPORATION
8 - 281
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Notes:
HMC465LP5
v00.0404
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz