www.docs.chipfind.ru
MICROWAVE CORPORATION
8 - 306
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC469MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
v00.0504
General Description
Functional Diagram
The HMC469MS8G is a SiGe HBT Dual Channel
Gain Block MMIC SMT amplifi er covering DC to
5 GHz. This versatile product contains two gain
blocks, packaged in a single 8 lead plastic MSOP,
for use as either separate cascadable 50 Ohm RF/IF
gain stages, LO or PA drivers or with both amplifi ers
combined utilizing external 90 hybrids to create
a high linearity driver amplifi er. Each amplifi er in
the HMC469MS8G offers 15 dB of gain, +18dBm
P1dB with a +34 dBm output IP3 at 850 MHz while
requiring only 75 mA from a single positive supply.
The combined dual amplifi er circuit delivers up
to +20 dBm P1dB with +35dBm OIP3 for specifi c
application bands through 4 GHz.
+18 dBm P1dB Output Power
15 dB Gain
Output IP3: +34 dBm
Supply (Vs): +5V to +12V
14.9 mm
2
Ultra Small 8 Lead MSOP
Typical Applications
The HMC469MS8G is a dual RF/IF
gain block & LO or PA driver:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 51 Ohm, T
A
= +25 C
Note: Data taken with broadband bias tee on device output. All specifi cations refer to a single amplifi er.
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
12.5
11
10
9
7.5
15
13
12
11
9.5
dB
dB
dB
dB
dB
Gain Variation Over Temperature
DC - 5.0 GHz
0.008
0.012
dB/ C
Input Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
12
10
8
dB
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
14
10
8
6
dB
dB
dB
dB
Reverse Isolation
DC - 5.0 GHz
18
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
15
13
11
9.5
8
18
16
14
12.5
11
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
34
30
25
23
dBm
dBm
dBm
dBm
Noise Figure
DC - 3.0 GHz
3.0 - 5.0 GHz
4.0
5.0
dB
dB
Supply Current (Icq)
75
mA
Features
MICROWAVE CORPORATION
8 - 307
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC469MS8G
Output Return Loss vs. Temperature
v00.0504
Broadband Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Noise Figure vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
1
2
3
4
5
6
7
8
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25C
+85C
-40C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25C
+85C
-40C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
1
2
3
4
5
6
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
1
2
3
4
5
6
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
Data shown is of a single amplifi er.
MICROWAVE CORPORATION
8 - 308
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC469MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 75 mA @ 850 MHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 51 Ohms
66
68
70
72
74
76
78
80
82
3.8
3.9
4
4.1
4.2
4.3
4.4
4.5
4.6
I
cc (mA)
Vcc (Vdc)
+85C
+25C
-40C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
5
6
7
8
9
10
11
12
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
0
2
4
6
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
15
20
25
30
35
40
0
1
2
3
4
5
6
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
Data shown is of a single amplifi er.
Cross Channel Isolation
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
1
2
3
4
5
6
7
8
INPUT1-OUTPUT2
INPUT2-OUTPUT1
PATH ISOLATION (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 309
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
10
12
14
16
18
20
22
1.4
1.6
1.8
2
2.2
2.4
2.6
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
0.5
1
1.5
2
2.5
3
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
HMC469MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Gain*
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
Reverse Isolation*
20
25
30
35
40
1.4
1.6
1.8
2
2.2
2.4
2.6
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
Output IP3*
10
12
14
16
18
20
22
1.4
1.6
1.8
2
2.2
2.4
2.6
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
Output P1dB*
Output Psat*
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
INPUT RETURN LOSS
OUTPUT RETURN LOSS
RETURN LOSS (dB)
FREQUENCY (GHz)
Input & Output Return Loss *
* Measurements shown are of both channels with 1.5 - 2.5 GHz 90 splitter/combiners on input & output
(see application circuit for balanced operation).
MICROWAVE CORPORATION
8 - 310
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC469MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFin)(Vcc = +4.2 Vdc)
+17 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 29.58 mW/C above 85 C)
1.92 W
Thermal Resistance
(junction to ground paddle)
33.8 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
PDF 
ZIP