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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC478ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
v00.1004
General Description
Functional Diagram
The HMC478ST89 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifi er
covering DC to 4 GHz. Packaged in an industry
standard SOT89, the amplifi er can be used as a
cascadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +20 dBm output power.
The HMC478ST89 offers 22 dB of gain with a +30
dBm output IP3 at 850 MHz while requiring only
62mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity to
normal process variations and excellent gain stability
over temperature while requiring a minimal number of
external bias components.
P1dB Output Power: +18 dBm
Gain: 22 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SOT89 Package
Robust 1,000V ESD, Class 1C
Typical Applications
The HMC478ST89 is an ideal RF/IF
gain block & LO or PA driver:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifi cations,
Vs= 5.0 V, Rbias= 18 Ohm, T
A
= +25 C
Note: Data taken with broadband bias tee on device output.
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
19
16
13
11
22
19
16
14
dB
dB
dB
dB
Gain Variation Over Temperature
DC - 4.0 GHz
0.015
0.02
dB/ C
Input Return Loss
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
15
10
13
dB
dB
dB
Output Return Loss
DC - 3.0 GHz
3.0 - 4.0 GHz
13
15
dB
dB
Reverse Isolation
DC - 4.0 GHz
20
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
15
13
10
8
18
16
13
11
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
30
28
25
dBm
dBm
dBm
Noise Figure
DC - 2.0 GHz
2.0 - 4.0 GHz
3
4
dB
dB
Supply Current (Icq)
62
mA
Features
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC478ST89
Output Return Loss vs. Temperature
v00.1004
Broadband Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0
1
2
3
4
5
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
+25C
+85C
-40C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
1
2
3
4
5
+25C
+85C
-40C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC478ST89
v00.1004
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 62 mA @ 850 MHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, R
BIAS
= 18 Ohms
0
2
4
6
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
0
1
2
3
4
5
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
36
5
6
7
8
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
40
45
50
55
60
65
70
75
80
3.8
3.9
3.9
4
4
4
4.1
4.2
4.2
4.2
4.3
I
cc (mA)
Vcc (Vdc)
+85C
+25C
-40C
Gain, Power & OIP3 vs. Supply Voltage
for Rs = 18 Ohms @ 850 MHz
0
4
8
12
16
20
24
28
32
36
4.5
5
5.5
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC478ST89
v00.1004
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vcc = +4.2
Vdc)
+5 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 9.5 mW/C above 85 C)
0.615 W
Thermal Resistance
(junction to lead)
105.6 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
ESD Sensitivity (HBM)
Class 1C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE
"MICRO-X
PACKAGE"
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
8
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC478ST89
v00.1004
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Application Circuit
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
C1, C2
0.01 F
100 pF
100 pF
100 pF
100 pF
100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
6V
8V
R
BIAS
V
ALUE
18
35
67
R
BIAS
P
OWER
R
ATING
1/8 W
1/4 W
1/2 W
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