MICROWAVE CORPORATION
8 - 340
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC480ST89
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
v00.0404
General Description
Features
Functional Diagram
The HMC480ST89 is an InGaP HBT Gain Block
MMIC SMT amplifi er covering DC to 5 GHz and
packaged in an industry standard SOT89. The
amplifi er can be used as a cascadable 50 Ohm
RF/IF gain stage as well as a LO or PA driver with
up to +20 dBm P1dB output power for cellular/3G,
FWA, CATV, microwave radio and test equipment
applications. The HMC480ST89 offers 19 dB of
gain with a +34 dBm output IP3 at 1 GHz while
requiring only 82 mA from a single positive sup-
ply. The HMC480ST89 InGaP gain block offers
excellent output IP3 and fl at +19 to +20dBm output
power performance through 5 GHz compared to
equivalent SiGe based products.
P1dB Output Power: +19 dBm to 2.5 GHz
Gain: 19 dB @ 1 GHz
16 dB @ 2 GHz
+34 dBm Output IP3
Single Supply: +6V to +8V
Industry Standard SOT89 Package
Typical Applications
The HMC480ST89 is an ideal RF/IF
gain block & LO or PA driver for:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 39 Ohm, T
A
= +25 C
Note: Data taken with broadband bias tee on device output.
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
17
14
12
10
8
19
17
15
13
11
dB
dB
dB
dB
dB
Gain Variation Over Temperature
DC - 5.0 GHz
0.008
0.016
dB/ C
Input Return Loss
DC - 1.0 GHz
1.0 - 5.0 GHz
17
10
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 5.0 GHz
17
10
dB
dB
Reverse Isolation
DC - 5.0 GHz
20
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.5 GHz
3.5 - 5.0 GHz
16
15.5
14.5
13
20
18.5
17.5
16
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.5 GHz
3.5 - 5.0 GHz
34
33
32
30
dBm
dBm
dBm
dBm
Noise Figure
DC - 4.0 GHz
4.0 - 5.0 GHz
3.25
4.0
dB
dB
Supply Current (Icq)
82
mA
MICROWAVE CORPORATION
8 - 341
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC480ST89
Output Return Loss vs. Temperature
v00.0404
Broadband Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
GAIN
(dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
+25 C
+85 C
-40 C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 342
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC480ST89
v00.0404
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Gain, Power & OIP3 vs. Supply Voltage
@ 850 MHz, Rbias= 39 Ohms
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 39 Ohms
4
6
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
38
40
0
1
2
3
4
5
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
36
7.6
8
8.4
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vs (Vdc)
70
72
74
76
78
80
82
84
86
88
90
4.6
4.7
4.8
4.9
5
I
cc (mA)
Vcc (Vdc)
+85 C
-40 C
+25 C
MICROWAVE CORPORATION
8 - 343
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC480ST89
v00.0404
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vcc = +5 Vdc)
+15 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 8.25 mW/C above 85 C)
0.536 W
Thermal Resistance
(junction to ground paddle)
122 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
NOTES:
1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-108S OR EQUIVALENT
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING
3. LEAD PLATING: 80Sn/20Pb
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
MICROWAVE CORPORATION
8 - 344
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC480ST89
v00.0404
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Application Circuit
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
5000
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
C1, C2
0.01 F
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 82 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
6V
8V
R
BIAS
V
ALUE
12
39
R
BIAS
P
OWER
R
ATING
1/8 W
1/4 W
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