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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC516LC5
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
v00.1204
General Description
Features
Functional Diagram
The HMC516LC5 is a high dynamic range
GaAs PHEMT MMIC Low Noise Amplifi er (LNA)
housed in a leadless "Pb free" RoHS compliant
SMT package. The HMC516LC5 provides 20 dB
of small signal gain, 2.0 dB of noise fi gure and
has an output IP3 of +25 dBm. The P1dB output
power of +13 dBm enables the LNA to also
function as a LO driver for balanced, I/Q or image
reject mixers. The HMC516LC5 allows the use of
surface mount manufacturing techniques.
Noise Figure: 2.0 dB
Gain: 20 dB
OIP3: +25 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
RoHS Compliant 5 X 5 mm Package
Electrical Specifi cations,
T
A
= +25 C, Vdd 1, 2, 3 = +3V
Typical Applications
The HMC516LC5 is ideal for use as a LNA or
driver amplifi er for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment and Sensors
Military
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
9 - 12
12 - 18
GHz
Gain
17.5
20
18
20.5
dB
Gain Variation Over Temperature
0.015
0.025
0.015
0.025
dB/ C
Noise Figure
2.0
2.5
2.0
2.5
dB
Input Return Loss
10
10
dB
Output Return Loss
12
12
dB
Output Power for 1 dB Compression (P1dB)
13
14
dBm
Saturated Output Power (Psat)
15
16
dBm
Output Third Order Intercept (IP3)
25
25
dBm
Supply Current (Idd)(Vdd = +3V)
65
65
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order On-line at www.hittite.com
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC516LC5
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
v00.1204
Broadband Gain & Return Loss
Gain vs. Temperature
Noise Figure vs. Temperature
Output IP3 vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
25
4
6
8
10
12
14
16
18
20
22
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
8
10
12
14
16
18
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
8
10
12
14
16
18
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
8
10
12
14
16
18
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
8
10
12
14
16
18
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
8
10
12
14
16
18
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC516LC5
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
v00.1204
P1dB vs. Temperature
Power Compression @ 12 GHz
Reverse Isolation vs. Temperature
Psat vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 12 GHz
0
2
4
6
8
10
12
14
16
18
20
8
10
12
14
16
18
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
8
10
12
14
16
18
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
8
10
12
14
16
18
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
10
12
14
16
18
20
22
24
0
1
2
3
4
5
6
7
2.5
3
3.5
GAIN (dB), P1dB (dBm)
NOI
SE FI
GURE (dB)
Vdd (Vdc)
Noise Figure
P1dB
Gain
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC516LC5
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
v00.1204
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2,
Vdd3)
+4 Vdc
RF Input Power (RFin)(Vdd = +3.0
Vdc)
+10 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 14 mW/C above 85 C)
1.25 W
Thermal Resistance
(channel to die bottom)
71 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
ESD Sensitivity (HBM)
Class 1A
Vdd (Vdc)
Idd (mA)
+2.5
61
+3.0
65
+3.5
69
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage range
shown above.
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC516LC5
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
v00.1204
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 6-19,
23-25, 27,
29, 31, 32
N/C
This pin may be connected to RF/DC ground.
Performance will not be affected.
4
RFIN
This pin is AC coupled and matched to 50 Ohms from
9 - 18 GHz.
30, 28, 26
Vdd1, 2, 3
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF and 2.2 F are required.
21
RFOUT
This pin is AC coupled and matched to 50 Ohms from
9 - 18 GHz.
3, 5, 20, 22
GND
These pins and package bottom must be
connected to RF/DC ground.
Application Circuit
Component
Value
C1, C2, C3
100 pF
C4, C5, C6
2.2 F
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