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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC524
GaAs MMIC I/Q MIXER
22 - 32 GHz
v00.1104
General Description
Features
Typical Applications
The HMC524 is a compact I /Q MMIC mixer which
can be used as either an Image Reject Mixer or a
Single Sideband Upconverter. The chip utilizes two
standard Hittite double balanced mixer cells and a
90 degree hybrid fabricated in a GaAs MESFET
process. All data shown below is taken with the chip
mounted in a 50 Ohm test fi xture and includes the
effects of 1 mil diameter x 20 mil length bond wires
on each port. A low frequency quadrature hybrid
was used to produce a 100 MHz USB IF output.
This product is a much smaller alternative to hybrid
style Image Reject Mixers and Single Sideband
Upconverter assemblies.
Electrical Specifi cations,
T
A
= +25 C, IF= 100 MHz, LO = +17 dBm*
* Unless otherwise noted, all measurements performed as downconverter.
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range, RF/LO
22 - 32
24 - 29.5
GHz
Frequency Range, IF
DC - 3.5
DC - 3.5
GHz
Conversion Loss (As IRM)
11
14
10
13
dB
Image Rejection
20
23
20
23
dB
1 dB Compression (Input)
+16
+16
dBm
LO to RF Isolation
30
40
30
40
dB
LO to IF Isolation
12
18
12
18
dB
IP3 (Input)
+20
+20
dBm
Amplitude Balance
0.2
0.4
dB
Phase Balance
5
5
Deg
Functional Diagram
The HMC524 is ideal for:
Point-to-Point and Point-to-Multi-Point Radio
Wide IF Bandwidth: DC - 3.5 GHz
Image Rejection: 23 dB
LO to RF Isolation: 50 dB
High Input IP3: +20 dBm
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC524
GaAs MMIC I/Q MIXER
22 - 32 GHz
v00.1104
Conversion Gain vs. Temperature
Image Rejection vs. Temperature
Conversion Gain vs. LO Drive
Return Loss
Data taken as IRM with External IF Hybrid
-20
-15
-10
-5
0
21
23
25
27
29
31
33
+25C
+85C
-55C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
21
23
25
27
29
31
33
+25C
+85C
-55C
I
M
AGE REJECTI
ON (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
21
23
25
27
29
31
33
+13 dBm
+15 dBm
+17 dBm
+19 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-15
-10
-5
0
21
23
25
27
29
31
33
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
21
23
25
27
29
31
33
+25C
+85C
-55C
P1dB (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
25
30
21
23
25
27
29
31
33
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
IP3 (dBm)
RF FREQUENCY (GHz)
Input P1dB vs. Temperature
Input IP3 vs. LO Drive
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC524
Isolations
Amplitude Balance vs. LO Drive
GaAs MMIC I/Q MIXER
22 - 32 GHz
v00.1104
IF Bandwidth*
Phase Balance vs. LO Drive
Quadrature Channel Data Taken Without IF Hybrid
-60
-50
-40
-30
-20
-10
21
23
25
27
29
31
33
ISOLATION (dB)
RF FREQUENCY (GHz)
LO/IF1
LO/IF2
LO/RF
RF/IF1
RF/IF2
-25
-20
-15
-10
-5
0
0.5
1
1.5
2
2.5
3
3.5
RETURN LOSS
CONVERSION GAIN
RESPONSE (dB)
IF FREQUENCY (GHz)
-3
-2.5
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
2.5
3
21
23
25
27
29
31
33
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
AMPLITUDE BALANCE (dB)
RF FREQUENCY (GHz)
-10
-5
0
5
10
21
23
25
27
29
31
33
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
PHASE BALANCE (degrees)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
21
23
25
27
29
31
33
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
21
23
25
27
29
31
33
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
SI
DEBAND REJECTI
ON (dBc)
RF FREQUENCY (GHz)
Upconverter Performance Conversion
Gain vs. LO Drive
Upconverter Performance Sideband
Rejection vs. LO Drive
* Conversion gain data taken with external IF hybrid
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC524
GaAs MMIC I/Q MIXER
22 - 32 GHz
v00.1104
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
-13
27
xx
xx
1
18
0
35
52
xx
2
76
74
87
74
82
3
xx
83
87
77
87
4
xx
xx
82
87
87
RF = 24.5 GHz @ 17.6 dBm
LO = 24.4 GHz @ 17.5 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Channel Temperature
150C
Continuous Pdiss (T=85C)
(derate 9.8 mW/C above 85C)
641 mW
Thermal Resistance (R
TH
)
(junction to die bottom)
102 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 deg C
ESD Sensitivity (HBM)
Class 1A
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND PAD IS .004"
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002"
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC524
GaAs MMIC I/Q MIXER
22 - 32 GHz
v00.1104
Pad
Number
Function
Description
Interface Schematic
3
RF
RF Port. This pad is AC coupled and matched to
50 Ohms from 22 to 32 GHz.
6
LO
LO Port. This pad is DC coupled and matched to
50 Ohms from 22 to 32 GHz.
1 (4)
IF2
IF Port. This pad is DC coupled. For applications not requir-
ing operation to DC, this port should be DC blocked exter-
nally using a series capacitor whose value has been chosen
to pass the necessary IF frequency range. For operation to
DC, this pad must not source/sink more than 3mA of current
or die non-function and possible die failure will result. Pads
4 and 5 are alternate IF ports.
2 (5)
IF1
GND
The backside of the die must be connected
to RF/DC ground.
Pad Descriptions
Assembly Diagrams
PDF 
ZIP