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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC526
GaAs MMIC I/Q MIXER
6 - 10 GHz
v00.1204
General Description
Features
Typical Applications
The HMC526 is a compact I /Q MMIC mixer which
can be used as either an Image Reject Mixer or a
Single Sideband Upconverter. The chip utilizes two
standard Hittite double balanced mixer cells and a
90 degree hybrid fabricated in a GaAs MESFET
process. All data shown below is taken with the chip
mounted in a 50 Ohm test fi xture and includes the
effects of 1 mil diameter x 20 mil length bond wires
on each port. A low frequency quadrature hybrid
was used to produce a 100 MHz USB IF output.
This product is a much smaller alternative to hybrid
style Image Reject Mixers and Single Sideband
Upconverter assemblies.
Electrical Specifi cations,
T
A
= +25 C, IF= 100 MHz, LO = +19 dBm*
* Unless otherwise noted, all measurements performed as downconverter.
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range, RF/LO
6 - 10
7 - 8.5
GHz
Frequency Range, IF
DC - 3.5
DC - 3.5
GHz
Conversion Loss (As IRM)
7.5
10
7.5
9.5
dB
Image Rejection
18
30
28
40
dB
1 dB Compression (Input)
+19
+20
dBm
LO to RF Isolation
35
45
40
50
dB
LO to IF Isolation
17
20
17
22
dB
IP3 (Input)
+25
+30
dBm
Amplitude Balance
0.5
0.2
dB
Phase Balance
5
5
Deg
Functional Diagram
The HMC526 is ideal for:
Point-to-Point and Point-to-Multi-Point Radio
VSAT
Military End Use
Wide IF Bandwidth: DC - 3.5 GHz
Image Rejection: 40 dB
LO to RF Isolation: 50 dB
High Input IP3: +28 dBm
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC526
GaAs MMIC I/Q MIXER
6 - 10 GHz
v00.1204
Conversion Gain vs. Temperature
Image Rejection vs. Temperature
Conversion Gain vs. LO Drive
Return Loss
Data taken as IRM with External IF Hybrid
0
10
20
30
40
50
60
5
6
7
8
9
10
11
+25C
+85C
-55C
I
M
AGE REJECTI
ON (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
5
6
7
8
9
10
11
+15 dBm
+17 dBm
+19 dBm
+21 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
5
6
7
8
9
10
11
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
5
6
7
8
9
10
11
+25C
+85C
-55C
P1dB (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
25
30
35
5
6
7
8
9
10
11
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
LO = +21 dBm
IP3 (dBm)
RF FREQUENCY (GHz)
Input P1dB vs. Temperature
Input IP3 vs. LO Drive
-20
-15
-10
-5
0
5
6
7
8
9
10
11
+25C
+85C
-55C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC526
Isolations
Amplitude Balance vs. LO Drive
GaAs MMIC I/Q MIXER
6 - 10 GHz
v00.1204
IF Bandwidth*
Phase Balance vs. LO Drive
Quadrature Channel Data Taken Without IF Hybrid
-60
-50
-40
-30
-20
-10
0
5
6
7
8
9
10
11
LO/RF
RF/IF1
LO/IF1
RF/IF2
LO/IF2
ISOLATION (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
0.5
1
1.5
2
2.5
3
3.5
RETURN LOSS
CONVERSION GAIN
RESPONSE (dB)
IF FREQUENCY (GHz)
-6
-4
-2
0
2
4
6
5
6
7
8
9
10
11
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
LO = +21 dBm
AMPLITUDE BALANCE (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
5
10
5
6
7
8
9
10
11
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
LO = +21 dBm
PHASE BALANCE (degrees)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
5
6
7
8
9
10
11
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
LO = +21 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
5
6
7
8
9
10
11
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
LO = +21 dBm
SIDEBAND REJECTION (dBc)
RF FREQUENCY (GHz)
Upconverter Performance Conversion
Gain vs. LO Drive
Upconverter Performance Sideband
Rejection vs. LO Drive
* Conversion gain data taken with external IF hybrid
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC526
GaAs MMIC I/Q MIXER
6 - 10 GHz
v00.1204
Harmonics of LO
LO Freq. (GHz)
nLO Spur at RF Port
1
2
3
4
3.5
39
40
52
51
6.5
43
49
51
70
7.5
51
65
53
62
8.5
56
61
56
50
9.5
47
57
65
63
10.5
45
55
59
46
LO = +19 dBm
Values in dBc below input LO level measured at RF Port.
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
10
29
18
51
1
33
0
46
77
68
2
99
71
75
70
99
3
97
101
100
86
101
4
99
98
98
102
107
RF = 7.6 GHz @ -10 dBm
LO = 7.5 GHz @ +19 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
+20 dBm
LO Drive
+27 dBm
Channel Temperature
150C
Continuous Pdiss (T=85C)
(derate 7.8 mW/C above 85C)
507 mW
Thermal Resistance (R
TH
)
(junction to die bottom)
128 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 deg C
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND PAD IS .004"
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002"
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC526
GaAs MMIC I/Q MIXER
6 - 10 GHz
v00.1204
Pad
Number
Function
Description
Interface Schematic
1
RF
RF Port. This pad is AC coupled and matched to
50 Ohms from 6 to 10 GHz.
4
LO
LO Port. This pad is AC coupled and matched to
50 Ohms from 6 to 10 GHz.
2 (5)
IF2
IF Port. This pad is DC coupled. For applications not requir-
ing operation to DC, this port should be DC blocked exter-
nally using a series capacitor whose value has been chosen
to pass the necessary IF frequency range. For operation to
DC, this pad must not source/sink more than 3mA of current
or die non-function and possible die failure will result. Pads
5 and 6 are alternate IF ports.
3 (6)
IF1
GND
The backside of the die must be connected
to RF/DC ground.
Pad Descriptions
Assembly Diagrams
PDF 
ZIP