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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order On-line at www.hittite.com
HMC555
GaAs MMIC I/Q MIXER
31 - 38 GHz
v00.1205
General Description
Features
Typical Applications
The HMC555 is a compact I/Q MMIC mixer which
can be used as either an Image Reject Mixer or a
Single Sideband Upconverter. The chip utilizes two
double balanced mixer cells and a 90 degree hybrid
fabricated in a GaAs MESFET process. All data shown
below is taken with the chip mounted in a 50 Ohm
test fi xture and includes the effects of 1 mil diameter
x 12 mil length bond wires on each port. A low
frequency quadrature hybrid was used to produce
a 100 MHz USB IF output. This compact mixer is a
much more compact alternative to hybrid style Image
Reject Mixers and Single Sideband Upconverter
assemblies, and is ideal for microwave radio
applications. The redundant IF port connections
located on opposing sides of the HMC555 chip,
provide added layout fl exibility.
Electrical Specifications,
T
A
= +25 C, IF= 100 MHz, LO = +17 dBm*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range, RF/LO
31 - 34
34 - 38
GHz
Frequency Range, IF
DC - 3.5
DC - 3.5
GHz
Conversion Loss (As IRM)
11
13
10.5
12.5
dB
Image Rejection
11
15
11
17
dB
1 dB Compression (Input)
17
16.5
dBm
LO to RF Isolation
37
50
35
40
dB
LO to IF Isolation
13
20
12
16
dB
IP3 (Input)
19
21
dBm
Amplitude Balance
0.5
1
dB
Phase Balance
16
12
Deg
* Unless otherwise noted, all measurements performed as downconverter.
Functional Diagram
The HMC555 is ideal for:
Microwave Radio
Satellite Communication Systems
Military End Use
Test Equipment & Sensors
Wide IF Bandwidth: DC - 3.5 GHz
High Image Rejection: 15 dB
High LO to RF Isolation: 50 dB
High Input IP3: +20 dBm
Passive Topology: No DC Bias Required
Compact Size: 1.49mm x 1.15mm x 0.1mm
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Conversion Gain vs. Temperature
Image Rejection vs. Temperature
Conversion Gain vs. LO Drive
Return Loss
Data taken as IRM with External IF Hybrid
-20
-15
-10
-5
0
30
31
32
33
34
35
36
37
38
39
+25C
+85C
-55C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
Input P1dB vs. Temperature
Input IP3 vs. LO Drive
0
5
10
15
20
25
30
31
32
33
34
35
36
37
38
39
+25C
+85C
-55C
I
M
AGE REJECTI
ON (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
30
31
32
33
34
35
36
37
38
39
+15dBm
+17dBm
+19dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
30
31
32
33
34
35
36
37
38
39
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
30
31
32
33
34
35
36
37
38
39
+25C
+85C
-55C
P1dB (dBm)
RF FREQUENCY (GHz)
5
10
15
20
25
30
30
31
32
33
34
35
36
37
38
39
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
IP3 (dBm
)
RF FREQUENCY (GHz)
HMC555
GaAs MMIC I/Q MIXER
31 - 38 GHz
v00.1205
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Isolations
Amplitude Balance vs. LO Drive
IF Bandwidth*
Phase Balance vs. LO Drive
Quadrature Channel Data Taken Without IF Hybrid
Upconverter Performance Conversion
Gain vs. LO Drive*
Upconverter Performance Sideband
Rejection vs. LO Drive*
-70
-60
-50
-40
-30
-20
-10
0
30
31
32
33
34
35
36
37
38
39
ISOLATION (dB)
RF FREQUENCY (GHz)
LO/RF
RF/IF1
LO/IF2
RF/IF2
LO/IF1
-20
-15
-10
-5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
RETURN LOSS
CONVERSION GAIN
RESPONSE (dB)
IF FREQUENCY (GHz)
-3
-2
-1
0
1
2
3
30
31
32
33
34
35
36
37
38
39
LO = +15dBm
LO = +17dBm
LO = +19dBm
AMPLITUDE BALANCE (dB)
RF FREQUENCY (GHz)
0
5
10
15
20
25
30
31
32
33
34
35
36
37
38
39
LO = +15dBm
LO = +17dBm
LO = +19dBm
PHASE BALANCE (degrees)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
30
31
32
33
34
35
36
37
38
39
+15dBm
+17dBm
+19dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
30
31
32
33
34
35
36
37
38
39
LO = +17dBm
LO = +19dBm
LO = +21dBm
SI
DEBAND REJECTI
ON (dBc)
RF FREQUENCY (GHz)
* Conversion gain data taken with external IF hybrid
HMC555
GaAs MMIC I/Q MIXER
31 - 38 GHz
v00.1205
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Order On-line at www.hittite.com
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
-12
xx
xx
xx
1
47
0
53
xx
xx
2
xx
62
68
59
xx
3
xx
xx
101
70
90
4
xx
xx
xx
90
104
RF = 35.1 GHz @ -10 dBm
LO = 35 GHz @ +17 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF Input
+19 dBm
IF1 / IF2 Input
+24 dBm
LO Drive
+27 dBm
Channel Temperature
150C
Continuous Pdiss (T=85C)
(derate 8.95 mW/C above 85C)
582 mW
Thermal Resistance (R
TH
)
(channel to die bottom)
111.6 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
ESD Sensitivity (HBM)
Class 1A
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
WP-3
[2]
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC555
GaAs MMIC I/Q MIXER
31 - 38 GHz
v00.1205
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND PAD IS .004"
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002"
9. THIS DIE IS DESIGNED FOR PICK-UP WITH
VACUUM (EDGE) COLLET TOOLS. TO PRECLUDE
THE RISK OF PERMANENT DAMAGE, NO CONTACT
TO THE DIE SURFACE IS ALLOWED WITHIN THIS
RECTANGULAR AREA.
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Order On-line at www.hittite.com
Pad Number
Function
Description
Interface Schematic
1
RF
This pad is AC coupled and matched to
50 Ohms from 31 to 38 GHz.
4
LO
This pad is AC coupled and matched to
50 Ohms from 31 to 38 GHz.
2 (5)
IF2
This pad is DC coupled. For applications not
requiring operation to DC, this port should be DC
blocked externally using a series capacitor whose
value has been chosen to pass the necessary IF
frequency range. For operation to DC, this pad
must not source/sink more than 3mA of current or
die non-function and possible die failure will result.
Pads 5 and 6 are alternate IF ports.
3 (6)
IF1
GND
The backside of the die must be connected
to RF/DC ground.
Pad Descriptions
Assembly Diagrams
HMC555
GaAs MMIC I/Q MIXER
31 - 38 GHz
v00.1205
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Order On-line at www.hittite.com
Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffl e or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005") Thick Alumina
Thin Film Substrate
0.076mm
(0.003")
Figure 1.
0.102mm (0.004") Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010") Thick Alumina
Thin Film Substrate
0.076mm
(0.003")
Figure 2.
0.150mm (0.005") Thick
Moly Tab
HMC555
GaAs MMIC I/Q MIXER
31 - 38 GHz
v00.1205
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