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HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
v00.1105
General Description
Features
Functional Diagram
The HMC559 is a GaAs MMIC PHEMT Distributed
Power Amplifi er die which operates between DC and
20 GHz. The amplifi er provides 14 dB of gain,
+36 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 400 mA
from a +10V supply. Gain fl atness is slightly posi-
tive from 4 to 20 GHz making the HMC559 ideal for
EW, ECM and radar driver amplifi er applications.
The HMC559 amplifi er I/O's are internally matched to
50 Ohms facilitating integration into Multi-Chip-Mod-
ules (MCMs). All data is taken with the chip connected
via two 0.075mm (3 mil) ribbon bonds of minimal length
0.31mm (12 mils).
P1dB Output Power: +28 dBm
Gain: 14 dB
Output IP3: +36 dBm
Supply Voltage: +10V @ 400 mA
50 Ohm Matched Input/Output
3.12 mm x 1.50 mm x 0.1 mm
Typical Applications
The HMC559 wideband PA is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifications,
T
A
= +25 C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 6.0
6.0 - 12.0
12.0 - 20.0
GHz
Gain
11
13
11
13.5
11.5
14
dB
Gain Flatness
0.5
0.5
1.5
dB
Gain Variation Over Temperature
0.01
0.02
0.01
0.02
0.02
0.03
dB/ C
Input Return Loss
22
15
13
dB
Output Return Loss
16
16
8
dB
Output Power for 1 dB Compression (P1dB)
25
28
24.5
27.5
23
27
dBm
Saturated Output Power (Psat)
30
29
28.5
dBm
Output Third Order Intercept (IP3)
37
36
33
dBm
Noise Figure
4.5
3.5
4.5
dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400
400
400
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
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HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
v00.1105
Output Return Loss vs. Temperature
Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0
5
10
15
20
25
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
GAIN
(dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
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Output IP3 vs. Output Power
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
20
22
24
26
28
30
32
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
v00.1105
20
22
24
26
28
30
32
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
20
22
24
26
9.5V
10V
10.5V
OIP3 (dBm)
OUTPUT POWER (dBm)
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
OIP3 (dBm)
FREQUENCY (GHz)
Gain, Power & OIP3 vs.
Supply Voltage @ 10 GHz, Fixed Vgg
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
9.5
10
10.5
Gain
P1dB
Psat
OIP3
Gain (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vdd Supply Voltage (Vdc)
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Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+11 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)
+3V to +5V
RF Input Power (RFin)(Vdd = +10 Vdc)
+30 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 55 mW/C above 85 C)
5 W
Thermal Resistance
(channel to die bottom)
18 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
ESD Sensitivity (HBM)
Class 1A
Vdd (V)
Idd (mA)
+9.5
399
+10
400
+10.5
401
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
v00.1105
Power Compression @ 20 GHz
Power Dissipation
0
4
8
12
16
20
24
28
32
0
2
4
6
8
10
12
14
16
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 2 GHz
Power Compression @ 10 GHz
0
4
8
12
16
20
24
28
32
0
2
4
6
8
10
12
14
16
18
20
22
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
28
32
0
2
4
6
8
10
12
14
16
18
20
22
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
2.5
3
3.5
4
4.5
5
5.5
-5
0
5
10
15
20
25
30
POWER DISSIPATION (W)
INPUT POWER (dBm)
Max Pdiss @ +85C
Max Pdiss @ +85C
Max Pdiss @ +85C
2 GHz
10 GHz
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HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
v00.1105
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS .002
Die Packaging Information
[1]
Standard
Alternate
GP-1
[2]
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
v00.1105
Pad Number
Function
Description
Interface Schematic
1
IN
This pad is DC coupled and matched
to 50 Ohms from DC - 20GHz.
Blocking capacitor is required.
2
Vgg2
Gate control 2 for amplifi er. Attach bypass
capacitor per application circuit herein. For nominal
operation +4V should be applied to Vgg2.
3
ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
4
OUT & Vdd
RF output for amplifi er. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
5
Vgg1
Gate control 1 for amplifi er. Attach bypass
capacitor per application circuit herein. Please
follow "MMIC Amplifi er Biasing Procedure"
application note.
6
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
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HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
v00.1105
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 500mA
Assembly Diagram
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HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20.0 GHz
v00.1105
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin fi lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffl e or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a
tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290
deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than
3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003")
RF Ground Plane
0.127mm (0.005") Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003")
RF Ground Plane
0.150mm (0.005") Thick
Moly Tab
0.254mm (0.010" Thick Alumina
Thin Film Substrate
Figure 2.
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