3_mixer_chip_section.indd
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC560
GaAs MMIC FUNDAMENTAL
MIXER, 24 - 40 GHz
v00.0705
General Description
Features
Functional Diagram
Wide IF Bandwidth: DC - 18 GHz
Input IP3: +21 dBm
High LO/RF Isolation: 35 dB
Passive Double Balanced Topology
Compact Size: 1.14mm x 0.59mm x 0.1mm
Electrical Specifications,
T
A
= +25 C, IF = 1GHz, LO = +13 dBm*
Typical Applications
The HMC560 is ideal for:
Test Equipment & Sensors
Microwave Point-to-Point Radios
Point-to-Multi-Point Radios
Military & Space
The HMC560 chip is a miniature passive double bal-
anced mixer which is fabricated in a GaAs MESFET
process, and can be used as an upconverter or down-
converter from 24-40 GHz in a small chip area. The
wide bandwidth allows this device to be used across
multiple radio bands with a common platform. Excel-
lent isolations are provided by on-chip baluns, and
the chip requires no external components and no
DC bias. Measurements were made with the chip
mounted and ribbon bonded into in a 50-ohm micro-
strip test fi xture. Measured data includes the parasi-
ticeffects of the assembly. RF connections to the chip
were made with 0.076mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range, RF & LO
24 - 36
36 - 40
GHz
Frequency Range, IF
DC - 18
DC - 18
GHz
Conversion Loss
8
10
10
13
dB
Noise Figure (SSB)
8
10
10
13
dB
LO to RF Isolation
28
35
27
35
dB
LO to IF Isolation
20
30
18
28
dB
RF to IF Isolation
12
20
18
28
dB
IP3 (Input)
19
21
dBm
IP2 (Input)
50
50
dBm
1 dB Compression (Input)
13
15
dBm
* Unless otherwise noted, all measurements performed as downconverter
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Conversion Gain vs.
Temperature @ LO = +13 dBm
Conversion Gain vs. LO Drive
Upconverter Performance
Conversion Gain @ LO = +13 dBm
Isolation @ LO = +13 dBm
IF Bandwidth @ LO = +13 dBm
HMC560
v00.0705
-20
-15
-10
-5
0
24
26
28
30
32
34
36
38
40
42
44
+25 C
+85 C
-55 C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
Conversion Gain
IF Return Loss
RESPONSE (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
24
26
28
30
32
34
36
38
40
42
44
+7 dBm
+9 dBm
+11 dBm
+13 dBm
+15 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
24
26
28
30
32
34
36
38
40
42
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
24
26
28
30
32
34
36
38
40
42
44
LO/RF
RF/IF
LO/IF
ISOLATION (dB)
FREQUENCY (GHz)
Return Loss @ LO = +13 dBm
-25
-20
-15
-10
-5
0
24
26
28
30
32
34
36
38
40
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC FUNDAMENTAL
MIXER, 24 - 40 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order On-line at www.hittite.com
Input IP2 vs.
Temperature @ LO = +13 dBm *
Input IP3 vs. LO Drive *
Input IP2 vs. LO Drive *
Input IP3 vs.
Temperature @ LO = +13 dBm *
* Two-tone input power = -10 dBm each tone, 1 MHz spacing.
Input P1dB vs.
Temperature @ LO = +13 dBm
HMC560
GaAs MMIC DOUBLE-BALANCED
MIXER, 24 - 40 GHz
v00.0705
0
5
10
15
20
25
24
26
28
30
32
34
36
38
40
+9 dBm
+11 dBm
+13 dBm
+15 dBm
IIP3 (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
24
26
28
30
32
34
36
38
40
+25 C
+85 C
-55 C
P1dB (dBm)
RF FREQUENCY (GHz)
0
10
20
30
40
50
60
70
80
24
26
28
30
32
34
36
38
40
+25 C
+85 C
-55 C
IIP2 (dBm)
RF FREQUENCY (GHz)
0
10
20
30
40
50
60
70
80
24
26
28
30
32
34
36
38
40
+9 dBm
+11 dBm
+13 dBm
+15 dBm
IIP2 (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
25
24
26
28
30
32
34
36
38
40
+25 C
+85 C
-55 C
IIP3 (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
25
24
26
28
30
32
34
36
38
40
IIP3 (dBm)
RF FREQUENCY (GHz)
Upconverter Performance
Input IP3 @ LO = +13 dBm
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
RF / IF Input
+25 dBm
LO Drive
+23 dBm
IF DC Current
2 mA
Channel Temperature
150 C/W
Continuous Pdiss (T= 85 C )
(derate 14.79 mW/ C above 85 C)
0.961 W
Thermal Resistance (R
TH
)
(channel to die bottom)
67.6 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004".
3. TYPICAL BOND PAD IS .004" SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. THIS DIE IS DESIGNED FOR PICK-UP WITH VACUUM (EDGE)
COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT
DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED
WITHIN THIS RECTANGULAR AREA.
Die Packaging Information
[1]
Standard
Alternate
WP-7
[2]
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC560
GaAs MMIC DOUBLE-BALANCED
MIXER, 24 - 40 GHz
v00.0705
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MxN Spurious Outputs
as a Down Converter
nLO
mRF
0
1
2
3
4
0
xx
-5
5
1
3
0
25
2
58
48
49
58
3
78
73
63
83
4
88
85
89
RF = 24 GHz @ -10 dBm
LO = 25 GHz @ +13 dBm
All values in dBc below IF output power level.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC560
GaAs MMIC DOUBLE-BALANCED
MIXER, 24 - 40 GHz
v00.0705
Pad Number
Function
Description
Interface Schematic
1
LO
This pad is DC coupled and matched to
50 Ohms from 24 to 40 GHz.
2
RF
This pad is DC coupled and matched to
50 Ohms from 24 to 40 GHz.
3
IF
This pad is DC coupled. For applications not requiring
operation to DC, this port should be DC blocked externally
using a series capacitor whose value has been chosen to
pass the necessary IF frequency range. For operation to
DC, this pad must not source/sink more than 2mA of cur-
rent or die non-function and possible die failure will result.
GND
The backside of the die must be connected
to RF/DC ground.
Pad Descriptions
Assembly Drawing
PDF 
ZIP