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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC575LP4 / 575LP4E
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 6 - 9 GHz OUTPUT
v00.0506
General Description
Features
Functional Diagram
Electrical Specifications,
T
A
= +25 C, Vdd1, Vdd2 = +5V, 3 dBm Drive Level
Typical Applications
The HMC575LP4 / HMC575LP4E is suitable for:
Wireless Local Loop
Point-to-Point & VSAT Radios
Test Instrumentation
Military & Space
The HMC575LP4 & HMC575LP4E are x2 active
broadband frequency multipliers utilizing GaAs
PHEMT technology in a leadless RoHS compliant
SMT package. When driven by a 3 dBm signal, the
multiplier provides +17 dBm typical output power from
6 to 9 GHz. The Fo and 3Fo isolations are 15 dBc with
respect to output signal level. This frequency multiplier
features DC blocked I/O's, and is ideal for use in LO
multiplier chains for Pt to Pt & VSAT Radios yielding
reduced parts count vs. traditional approaches. The low
additive SSB Phase Noise of -140 dBc/Hz at 100 kHz
offset helps maintain good system noise performance.
The HMC575LP4 & HMC575LP4E are compatible with
surface mount manufacturing techniques.
High Output Power: +17 dBm
Low Input Power Drive: -2 to +6 dBm
Fo, 3Fo Isolation: 15 dBc
100 KHz SSB Phase Noise: -140 dBc/Hz
Single Supply: +5V@ 90 mA
RoHS Compliant 4x4 mm SMT Package
Parameter
Min.
Typ. Max.
Units
Frequency Range, Input
3 - 4.5
GHz
Frequency Range, Output
6 - 9
GHz
Output Power
14
17
dBm
Fo Isolation (with respect to output level)
15
dBc
3Fo Isolation (with respect to output level)
15
dBc
Input Return Loss
15
dB
Output Return Loss
12
dB
SSB Phase Noise (100 kHz Offset)
-140
dBc/Hz
Supply Current (Idd1 & Idd2)
90
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC575LP4 / 575LP4E
Output Power vs.
Temperature @ 3 dBm Drive Level
Output Power vs.
Supply Voltage @ 3 dBm Drive Level
Output Power vs. Drive Level
v00.0506
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 6 - 9 GHz OUTPUT
Output Power vs. Input Power
Isolation @ 3 dBm Drive Level
0
5
10
15
20
25
5.5
6
6.5
7
7.5
8
8.5
9
9.5
+25C
+85C
-40C
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
-15
-10
-5
0
5
10
15
20
25
-10
-8
-6
-4
-2
0
2
4
6
8
10
6 GHz
7.5GHz
9 GHz
OUTPUT POWER (dBm)
INPUT POWER (dBm)
-15
-10
-5
0
5
10
15
20
25
6
6.5
7
7.5
8
8.5
9
Fo
2Fo
3Fo
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
0
5
10
15
20
25
6
6.5
7
7.5
8
8.5
9
Vdd=4.5V
Vdd=5.0V
Vdd=5.5V
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
-10
-5
0
5
10
15
20
25
6
6.5
7
7.5
8
8.5
9
-2dBm
0dBm
2dBm
4dBm
6dBm
OUTPUT POWER (dBm)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
6
6.5
7
7.5
8
8.5
9
+25C
+85C
-40C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
3
3.25
3.5
3.75
4
4.25
4.5
+25C
+85C
-40C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
HMC575LP4 / 575LP4E
v00.0506
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 6 - 9 GHz OUTPUT
Absolute Maximum Ratings
RF Input (Vdd = +5V)
+13 dBm
Supply Voltage (Vdd)
+6.0 Vdc
Channel Temperature
150 C
Continuous Pdiss (T= 85 C)
(derate 7.9 mW/C above 85 C)
512 mW
Thermal Resistance
(channel to ground paddle)
127 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
4.5
89
5.0
90
5.5
91
Note:
Multiplier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
HMC575LP4 / 575LP4E
v00.0506
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 6 - 9 GHz OUTPUT
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOT FOR SUGGESTED
LAND PATTERN.
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC575LP4
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H575
XXXX
HMC575LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H575
XXXX
[1] Max peak refl ow temperature of 235 C
[2] Max peak refl ow temperature of 260 C
[3] 4-Digit lot number XXXX
Package Information
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number
Function
Description
Interface Schematic
1, 5 - 14, 18,
19, 21, 23, 24
N/C
These pins are internally not connected; however,
this product was specifi ed with these pins connected
to RF/ DC ground.
2, 4, 15, 17
GND
Package bottom must also be connected
to RF/DC ground.
3
RFIN
Pin is AC coupled and matched
to 50 Ohms from 3 - 4.5 GHz.
16
RFOUT
Pin is AC coupled and matched
to 50 Ohms from 6 - 9 GHz.
20, 22
Vdd2, Vdd1
Supply voltage 5V 0.5V. External bypass capacitors
of 100 pF and 2.2 F are required.
Pin Description
Application Circuit
Component
Value
C1, C2
100 pF
C3, C4
2.2 F
HMC575LP4 / 575LP4E
v00.0506
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 6 - 9 GHz OUTPUT
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