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Электронный компонент: HMC-C011

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-C011
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v00.0605
General Description
Features
Functional Diagram
The HMC-C011 is a general purpose broadband high
isolation non-refl ective GaAs MESFET SPDT switch
housed in a miniature hermetic module with fi eld
replaceable SMA connectors. Covering DC to 20
GHz, the switch offers high isolation and low insertion
loss. The switch features >45 dB isolation up to 5 GHz
and >35 dB isolation up to 20 GHz. CMOS interface
allows a single positive +5V bias voltage at very low
DC currents.
High Isolation: >45 dB up to 5 GHz
>35 dB up to 20 GHz
Low Insertion Loss: 2 dB @ 12 GHz
2.5 dB @ 16 GHz
Fast Switching
Non-Refl ective Design
Hermetically Sealed Module
Field Replaceable SMA connectors
-55 to +85 C Operating Temperature
Electrical Specifi cations,
T
A
= +25 C, With V
DC
= +5V & 0/+5V Control, 50 Ohm System
Typical Applications
The HMC-C011 is ideal for:
Basestation Infrastructure
Fiber Optics & Broadband Telecom
Microwave Radio & VSAT
Military Radios, Radar, & ECM
Test Instrumentation
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 4.0 GHz
DC - 12.0 GHz
DC - 16.0 GHz
DC - 20.0 GHz
1.8
2.0
2.5
4.0
2.3
2.5
3.5
4.9
dB
dB
dB
dB
Isolation
DC - 4.0 GHz
DC - 8.0 GHz
DC - 20.0 GHz
41
35
25
46
40
35
dB
dB
dB
Return Loss
"On State"
DC - 12.0 GHz
DC - 20.0 GHz
15
10
dB
dB
Return Loss RF1, RF2
"Off State"
DC - 10.0 GHz
DC - 15.0 GHz
DC - 20.0 GHz
20
15
10
dB
dB
dB
Input Power for 1 dB Compression
0.5 - 20.0 GHz
20
23
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone)
0.5 - 10.0 GHz
0.5 - 20.0 GHz
48
45
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 20 GHz
1.3
5.0
ns
ns
Switching Transients
DC - 20 GHz
10
mVpn
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Isolations
Insertion Loss
Return Loss
Isolation Between Ports RF1 and RF2
Input P1dB and P0.1dB
Compression Point
Input Third Order Intercept Point
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
HMC-C011
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v00.0605
-80
-70
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
12
14
16
18
20
22
RF2 PATH ON
RF1 PATH ON
ISOLATION (dB)
FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
12
14
16
18
20
22
RF1
RF2
ISOLATION (dB)
FREQUENCY (GHz)
25
30
35
40
45
50
55
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
INPUT IP3 (dBm)
FREQUENCY (GHz)
10
15
20
25
30
0
2
4
6
8
10
12
14
16
18
20
22
P1dB
P0.1dB
INPUT P1dB AND P0.1dB (dBm)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
RFC
RF1,RF2 ON
RF1,RF2 OFF
RETURN LOSS (dB)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Truth Table
Control Voltages
Control Input
Signal Path State
Vctl
RFC to RF1
RFC to RF2
Low
On
Off
High
Off
On
State
Bias Condition
High
+3.5 to V
DC
@ 1 mA Typ.
Low
0 to +1.5V @ 20
A
Typ.
Absolute Maximum Ratings
RF Input Power
+27 dBm
Supply Voltage (V
DC
)
+7 Vdc
Control Voltage Range (Vctl)
-0.5V to Vdd +0.5V
Hot Switch Power Level
+23 dBm
Channel Temperature
150 C
Continuous Pdiss (T=85C)
(derate 4 mW/C about 85C)
0.26 W
Thermal Resistance
(Insertion Loss Path)
420 C/W
Thermal Resistance
(Terminated Path)
250 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
ESD Sensitivity (HBM)
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC-C011
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v00.0605
Bias Voltage & Current
V
DC
Range = +5 Vdc 10%
V
DC
(Vdc)
I
DC
(Typ.)
(mA)
+5.0
1.4
(Bias current increases with switching rate to 15 - 20 mA.)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
HMC-C011
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v00.0605
NOTES:
1. PACKAGE, LEADS, COVER MATERIAL: KOVAR
TM
2. BRACKET MATERIAL: ALUMINUM
3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER
ELECTROLYTIC NICKEL 75 MICROINCHES MIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. TOLERANCES .005 [0.13] UNLESS OTHERWISE SPECIFIED
6. FIELD REPLACEABLE SMA CONNECTORS.
TENSOLITE 5602-5CCSF OR EQUIVALENT.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-C011
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v00.0605
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 3
RFC, RF1, RF2
RF connector, SMA female, fi eld replaceable.
These pins are DC coupled and matched to 50 Ohms.
DC blocking capacitors are required if external RF line
potential is not equal to 0V.
4
GND
Power supply ground.
5
VCTL
CMOS interface, control voltages per table.
Requires active pullup to -5V.
6
V
DC
Supply voltage
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Notes:
HMC-C011
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
v00.0605