APPLICATIONS*
Down-Hole Compassing/Heading Sensing
Replace Expensive Fluxgate Sensors
Proximity Sensing
Position/Angle Sensing
Replace Hall Effect Sensors
Signal Transformation (Isolation)
Current Measurement
*See HMC1001/2 1021/2 Family data sheet for more information
FEATURES
Ceramic Dip Package
Reliable For -55 to +225
C Operation
2 Gauss Field Range (HTMC1001D
6 Gauss Field Range (HTMC1021D)
1mV/V/Oersted Sensitivity (Room Temp)
Patented On-Chip Straps Require Low Voltage
Set/Reset Pulse
High Temperature Products
HIGH TEMPERATURE MAGNETIC SENSORS
HTMC1001D
Advance Information
Solid State Electronics Center 12001 State Highway 55, Plymouth, MN 55441 (800) 323-8295 http://www.ssec.honeywell.com
HTMC 1021D PINOUT / PACKAGE
OUT+
OUT-
VBRIDGE
GND
Rbridge
R
R
R
R
OFFSET +
S/R +
OFFSET -
S/R -
R set/reset
Roffset
Iset, -Ireset
Ioffset
MR SENSOR CIRCUIT
Not actual size
OUT+ 1
VBRIDGE 2
GND 3
OUT- 4
8 OFFSET-
7 OFFSET+
6 S/R-
5 S/R+
DIE
HTMC1021D
HTMC 1001D PINOUT / PACKAGE
OUT+ 1
VBRIDGE 2
GND 3
OUT- 4
8 S/R-
7 OFFSET+
6 OFFSET-
5 S/R+
DIE
HTMC1001/2D
900244 Rev.A
10/99
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
*Temperature is 25
C onless otherwise specified.
SPECIFICATIONS
c
i
t
s
i
r
e
t
c
a
r
a
h
C
s
n
o
i
t
i
d
n
o
C
D
1
0
0
1
C
M
T
H
l
a
c
i
p
y
T
D
1
2
0
1
C
M
T
H
l
a
c
i
p
y
T
t
i
n
U
y
l
p
p
u
S
e
g
d
i
r
B
D
N
G
o
t
d
e
c
n
e
r
e
f
e
r
e
g
d
i
r
b
V
5
5
s
t
l
o
V
*
e
c
n
a
t
s
i
s
e
R
e
g
d
i
r
B
A
m
5
=
t
n
e
r
r
u
c
e
g
d
i
r
B
0
5
8
0
0
1
1
e
r
u
t
a
r
e
p
m
e
T
g
n
i
t
a
r
e
p
O
t
n
e
i
b
m
A
C
5
2
2
o
t
5
5
-
C
5
2
2
o
t
5
5
-
C
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
d
e
s
a
i
b
n
u
,
t
n
e
i
b
m
A
C
0
5
2
C
0
5
2
C
*
e
g
n
a
R
d
l
e
i
F
d
l
e
i
f
d
e
il
p
p
a
l
a
t
o
t
--
)
S
F
(
e
l
a
c
s
ll
u
F
2
6
s
s
u
a
g
*
r
o
r
r
E
y
t
i
r
a
e
n
i
L
s
s
u
a
g
1
e
n
il
t
h
g
i
a
r
t
s
t
i
f
t
s
e
B
s
s
u
a
g
2
)
C
5
2
t
a
(
s
s
u
a
g
6
1
.
0
1
A
N
5
0
.
0
4
.
0
6
.
1
S
F
%
*
r
o
r
r
E
s
i
s
e
r
e
t
s
y
H
C
5
2
@
s
s
u
a
g
3
s
s
o
r
c
a
s
p
e
e
w
s
3
5
0
.
0
8
0
.
0
S
F
%
*
r
o
r
r
E
y
t
il
i
b
a
t
a
e
p
e
R
C
5
2
@
s
s
u
a
g
3
s
s
o
r
c
a
s
p
e
e
w
s
3
5
0
.
0
8
0
.
0
S
F
%
*
t
e
s
f
f
O
e
g
d
i
r
B
s
s
u
a
g
0
=
d
l
e
i
F
,
)
-
T
U
O
(
-
)
+
T
U
O
(
=
t
e
s
f
f
O
V
5
=
e
g
d
i
r
b
V
,
e
s
l
u
p
t
e
S
r
e
t
f
a
0
2
5
.
2
V
m
*
y
t
i
v
i
t
i
s
n
e
S
V
5
=
e
g
d
i
r
b
V
t
A
2
.
3
0
.
1
s
s
u
a
g
/
V
/
V
m
*
n
o
i
t
u
l
o
s
e
R
V
5
=
e
g
d
i
r
b
V
,
z
H
0
1
=
h
t
d
i
w
d
n
a
B
7
2
5
8
s
s
u
a
g
*
h
t
d
i
w
d
n
a
B
)
C
D
=
t
i
m
il
r
e
w
o
l
(
l
a
n
g
i
s
c
i
t
e
n
g
a
M
5
5
z
H
M
*
p
a
r
t
S
T
E
S
F
F
O
m
o
r
f
d
e
r
u
s
a
e
M
T
E
S
F
F
O
o
t
+
T
E
S
F
F
O
-
5
.
2
0
5
p
a
r
t
S
T
E
S
F
F
O
o
c
p
m
e
T
T
A
C
5
2
2
+
o
t
5
5
-
=
0
0
9
3
0
0
9
3
C
/
m
p
p
*
d
l
e
i
F
T
E
S
F
F
O
n
o
i
t
c
e
r
i
d
e
v
i
t
i
s
n
e
s
n
i
d
e
il
p
p
a
d
l
e
i
F
1
5
6
.
4
s
s
u
a
g
/
A
m
*
p
a
r
t
S
t
e
s
e
R
/
t
e
S
-
R
/
S
o
t
+
R
/
S
m
o
r
f
d
e
r
u
s
a
e
M
5
.
1
7
.
7
*
t
n
e
r
r
u
C
t
e
s
e
R
/
t
e
S
s
s
e
l
r
o
,
e
l
c
y
c
y
t
u
d
%
1
.
0
t
a
t
n
e
r
r
u
C
2
.
3
5
.
0
p
m
A
*
d
l
e
i
F
g
n
i
b
r
u
t
s
i
D
e
s
l
u
p
R
/
S
e
s
U
.
e
d
a
r
g
e
d
o
t
s
t
r
a
t
s
y
t
i
v
i
t
i
s
n
e
S
.
y
t
i
v
i
t
i
s
n
e
s
e
r
o
t
s
e
r
o
t
3
0
2
s
s
u
a
g
o
c
p
m
e
T
y
t
i
v
i
t
i
s
n
e
S
T
A
V
5
=
e
g
d
i
r
b
V
C
5
2
2
+
o
t
5
5
-
=
A
m
5
=
e
g
d
i
r
b
I
0
0
0
3
-
0
0
6
-
0
0
0
3
-
0
0
6
-
C
/
m
p
p
o
c
p
m
e
T
t
e
s
f
f
O
e
g
d
i
r
B
T
A
=
C
5
2
2
+
o
t
5
5
-
t
e
s
e
R
/
t
e
S
o
n
t
e
s
e
R
/
t
e
S
h
t
i
w
A
m
5
=
e
g
d
i
r
b
I
0
0
3
0
1
0
0
5
0
1
C
/
m
p
p
o
c
p
m
e
T
e
c
n
a
t
s
i
s
e
R
C
5
2
2
+
o
t
5
5
-
,
V
5
=
e
g
d
i
r
b
V
0
0
5
2
0
0
5
2
C
/
m
p
p
PDF 
ZIP