Advanced Information
HTMOS
TM
High Temperature Products
HIGH TEMPERATURE N-CHANNEL POWER FET
HTNFET
Down-Hole Oil, Gas and Geothermal Well
Aerospace and Avionics
Turbine Engine Control
Industrial Process Control
Nuclear Reactor
Electric Power Conversion
Heavy Duty Internal Combustion Engines
Specified Over -55 to +225C
Output Current up to 1 Amp Continuous
Typical Input Voltage up to 60V
Silicon-On-Insulator (SOI)
4-Pin Power-Tab Package or
8-Pin Ceramic Dip with Integral Heat Sink
FEATURES
APPLICATIONS
The HTNFET is a high reliability N-Channel Power FET
designed specifically for extremely wide temperature
range applications such as down-hole instrumentation,
aerospace, turbine engine and industrial process control.
This power FET is fabricated using a Silicon-On-Insulator
(SOI) process that dramatically reduces leakage currents
at high temperatures.
GENERAL DESCRIPTION
Solid State Electronics Center 12001 State Highway 55, Plymouth, MN 55441 (800) 323-8295 http://www.ssec.honeywell.com
High DC current capability combined with low Rds-ON make
this component suitable both for DC and switching applica-
tions. Typically, parts will operate at +300C up to a year,
with derated performance. All parts are burned in to elimi-
nate infant mortality. Additionally, each part is tested over -
55 to +225C to provide guaranteed performance over the
entire temperature band.
FUNCTIONAL DIAGRAM
Drain
Gate
Source
PACKAGE DIAGRAMS
4-Pin Power-Tab Package
8-Pin Ceramic DIP With Heat Sink
1
2
3
4
8
6
5
7 Gate
Source
Source
Source
Drain
Drain
Drain
Gate
4
1
2
3
source
drain
gate
gate
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1
S
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2
3
H T A N F
E T
HTNFET
HTNFET
900214 Rev. D
11-02
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS (1, 2)
(1) Stresses in excess of those listed above may result in permanent damage.
These are stress ratings only, and operation at these levels is not implied.
Frequent or extended exposure to absolute maximum conditions may
affect device reliability.
(2) ESD sensitivity is determined by the gate capacitance; additional ESD
protection would decrease performance.
(3) Derate power at 1W/C to Tj = 300C.
-55 to +225C, unless otherwise specified
(1) Typical operating conditions: VDS = 10 V, TA=25C.
(2) Worst case operating conditions: VDS = 50 V, TA = -55 to 225C.
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IDSS (A)
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VDS = 50 V
VDS = 10 V
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