SE3455/5455
GaAs Infrared Emitting Diode
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90
or 20
(nominal) beam angle option
935 nm wavelength
Wide operating temperature range
(-55
C to +125
C)
Ideal for high pulsed current applications
Mechanically and spectrally matched to
SD3421/5421 photodiode, SD3443/5443/5491
phototransistor, SD3410/5410 photodarlington and
SD5600 series Schmitt trigger
INF
R
A-
83.
T
I
F
DESCRIPTION
The SE3455/5455 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3455 series has flat window cans
providing a wide beam angle, while the SE5455 series
has glass lensed cans providing a narrow beam angle.
These devices are constructed with dual bond wires
suitable for pulsed current applications. The TO-46
packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
INF
R
A
-
-
5
.
D
IM
OUTLINE DIMENSIONS in inches (mm)
Tolerance
3 plc decimals
0.005(0.12)
2 plc decimals
0.020(0.51)
SE3455
SE5455
2. ANODE
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
.140 (3.56)
.153 (3.89)
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)
DIA.
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45
.048(1.22)
.028(.71)
(CASE)
2. ANODE (CASE)
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
5.08
.200
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)
DIA.
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)
26
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
Honeywell Europe S.A.
SE3455/5455
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS (25
C unless otherwise noted)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Total Power Output
P
O
mW
I
F
=100 mA
SE3455-001, SE5455-001
2.0
SE3455-002, SE5455-002
3.5
SE3455-003, SE5455-003
4.8
SE3455-004, SE5455-004
5.4
Forward Voltage
V
F
1.7
V
I
F
=100 mA
Reverse Breakdown Voltage
V
BR
3.0
V
I
R
=10
A
Peak Output Wavelength
p
935
nm
Spectral Bandwidth
50
nm
Spectral Shift With Temperature
p
/
T
0.3
nm/
C
Beam Angle
(1)
degr.
I
F
=Constant
SE3455
90
SE5455
20
Radiation Rise And Fall Time
t
r
, t
f
0.7
s
Notes
1. Beam angle is defined as the total included angle between the half intensity points.
ABSOLUTE MAXIMUM RATINGS
(25
C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Peak Forward Current
3 A
(1
s pulse width, 300 pps)
Power Dissipation
150 mW
(1)
Operating Temperature Range
-55
C to 125
C
Storage Temperature Range
-65
C to 150
C
Soldering Temperature (10 sec)
260
C
Notes
1. Derate linearly from 25
C free-air temperature at the
rate of 1.43 mW/
C.
IN
FR
A
-
-
1
.S
C
H
SCHEMATIC
Cathode
Anode
27
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE3455/5455
GaAs Infrared Emitting Diode
Fig. 1
Radiant Intensity vs
Angular Displacement (SE3455)
IN
FR
A
-
1
7
.G
R
A
IN
FR
A
-
2
3
.G
R
A
Fig. 2
Radiant Intensity vs
Angular Displacement (SE5455)
Fig. 3
Radiant Intensity vs
Forward Current
INF
R
A-18.G
R
A
INF
R
A-19.G
R
A
Fig. 4
Forward Voltage vs
Forward Current
Fig. 5
Forward Voltage vs
Temperature
I
N
FR
A-20
.G
R
A
I
N
FR
A--
5
.G
RA
Fig. 6
Spectral Bandwidth
All Performance Curves Show Typical Values
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10
0
+10 +20 +30 +40
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60 -45 -30 -15
0
+15 +30 +45 +60
Forward current - mA
Forward voltage - V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
0
20
40
60
80
100
Forward current - mA
Normalized radiant
intensity - %
0.0
50
100
150
200
250
0
100
200
300
400
500
Pulsed
Wavelength - nm
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870 890
910 930 950 970
990 1010
Temperature - C
Forward voltage - V
1.21
1.23
1.25
1.27
1.29
1.31
1.33
1.35
-30
-10
10
30
50
70
90
IF = 100 mA
28
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE3455/5455
GaAs Infrared Emitting Diode
Fig. 7
Coupling Characteristics
SE3455 with SD3443
IN
FR
A
-
2
1
.G
R
A
IN
FR
A
-
2
4
.G
R
A
Fig. 8
Coupling Characteristics
SE5455 with SD5443
Fig. 9
Radiant Intensity vs
Case Temperature
INF
R
A-22.G
R
A
Lens-to-lens distance - inches
Normalized light
current
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
7
9
1
3
5
8
Window-to-window distance - inches
Normalized light
current
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
Case temperature - C
Normalized radiant intensity
0.1
0.2
0.3
0.4
0.5
1.0
2.0
3.0
4.0
5.0
-75 -50 -25
0
25
50
75 100 125
Normalized to
I
F
= 100 mA
T
A
= 25 C
29
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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