HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/4
H2N7002
HSMC Product Specification
H2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
Absolute Maximum Ratings
Drain-Source Voltage............................................................................................................. 60 V
Drain-Gate Voltage (RGS=1M
) ........................................................................................... 60 V
Gate-Source Voltage ........................................................................................................ +/-40 V
Continuous Drain Current (Ta=25
C)(1) ........................................................................... 200 mA
Continuous Drain Current (Ta=100
C)(1) ......................................................................... 115 mA
Pulsed Drain Current (Ta=25
C)(2)................................................................................... 800 mA
Total Power Dissipation (Tc=25
C).................................................................................. 200 mW
Derate above 25
C ................................................................................................... 0.16 Mw /
C
Storage Temperature............................................................................................... -55 to 150
C
Operating Junction Temperature ............................................................................. -55 to 150
C
Lead Temperature, for 10 second Soldering...................................................................... 260
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient ................................................................... 625
C / W
Characteristics
(Ta=25
C)
Parameter
Symbol
Test Conditions
Min
Typ.
Max
Unit
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0, I
D
=10uA
60
-
-
V
Gate Threshold Voltage
V
GS(th)
V
DS
=2.5V, I
D
=0.25mA
1
-
2.5
V
Gate Source Leakage Current, Forward
I
GSS/F
V
GS
=+20V, V
DS
=0
-
-
100
nA
Gate Source leakage Current, Reverse
I
GSS/R
V
GS
=-20V, V
DS
=0
-
-
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60V, V
GS
=0
-
-
1
uA
On-State Drain Current
I
D(ON)
V
DS
>2V
DS(ON)
, V
GS
=10V
500
-
-
mA
I
D
=50mA, V
GS
=5V
-
-
0.375
V
Static Drain-Source On-State Voltage
V
DS(ON)
I
D
=500mA, V
GS
=10V
-
-
3.75
V
I
D
=50mA, V
GS
=5V
-
-
7.5
Static Drain-Source On-State Resistance
R
DS(ON)
I
D
=500mA, V
GS
=10V
-
-
7.5
Forward Transconductance
G
FS
V
DS
>2V
DS(ON)
, I
D
=200mA
80
-
-
mS
Input Capacitance
C
iss
-
-
50
pF
Output Capacitance
C
oss
-
-
25
pF
Reverse Transfer Capacitance
C
rss
V
DS
=25V, V
GS
=0, f=1MHz
-
-
5
pF
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width
300us, Duty cycle
2%.
SOT-23
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 2/4
H2N7002
HSMC Product Specification
Characteristics Curve
Output Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
2
4
6
8
10
VDS(V)
ID
(
A
)
VGS=10V
9V 8V
7V
6V
5V
4V
3V
Transfer Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
2
4
6
8
10
12
VGS(V)
ID
(
A
)
TJ=-55C
Tj=25C
Tj=150C
VDS=10V
Typical Transconductance
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
0.2
0.4
0.6
0.8
1
ID(A)
g
F
S(
S)
Tj=-55C
Tj=25C
Tj=150C
VDS=7V
On-resistance versus Drain Current
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
ID(A)
R
D
S
(
on)
VGS=4V
VGS=6V
VGS=8V
VGS=10V
Capacitance
0
10
20
30
40
50
60
70
0
10
20
30
40
50
VDS(V)
C(
p
F
)
Ciss
Coss
Crss
On-Resistance Variation With Temperature
0
0.5
1
1.5
2
2.5
-50
0
50
100
150
Tj Junction Temperature
R
D
S
(
on)
(
m
)
VGS=10V
ID=0.5A
Breakdown Voltage Variation With Temperature
0.6
0.7
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
Tj Junction Temperature
BV
D
S
S(
V
)
VGS=0
ID=0.25mA
Source-Drain Diode Forward Voltage
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD(V)
Is
(
m
A
)
Tj=150C
Tj=25C
Tj=-55C
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 4/4
H2N7002
HSMC Product Specification
SOT-23 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1102
0.1204
2.80
3.04
J
0.0034
0.0070
0.085
0.177
B
0.0472
0.0630
1.20
1.60
K
0.0128
0.0266
0.32
0.67
C
0.0335
0.0512
0.89
1.30
L
0.0335
0.0453
0.85
1.15
D
0.0118
0.0197
0.30
0.50
S
0.0830
0.1083
2.10
2.75
G
0.0669
0.0910
1.70
2.30
V
0.0098
0.0256
0.25
0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Gate 2.Source 3.Drain
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
Marking:
7 0
Control Code
2
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