HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 1/3
HBD437T
HSMC Product Specification
HBD437T
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD437T is silison epitaxial-base NPN power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary PNP type is HBD438T.
Absolute Maximum Ratings
(Ta=25
C)
Symbol
Parametor
Value
Unit
VCBO
Collector-Base Voltage (IE=0)
45
V
VCES
Collector-Emitter Voltage (VBE=0)
45
V
VCEO
Collector-Emitter Voltage (IB=0)
45
V
VEBO
Emitter-Base Voltage (IC=0)
5
V
IC
Collector Current
4
A
ICM
Collector Peak Current (t
10ms)
7
A
IB
Base Current
1
A
Tc=25
C
25
W
PD
Total Dissipation at
Ta=25
C
1.5
W
Tstg
Storage Temperature
-55 to 150
C
Tj
Max. Operating Junction Temperature
150
C
Thermal Data
Rthj-case
Thermal Resistance Junction-case
Max.
5
C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
83
C/W
Electrical Characteristics
(Ta=25
C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off Current (IE=0)
VCB=45V
-
-
100
uA
ICES
Collector Cut-off Current
(VBE=0)
VCE=45V
-
-
100
uA
IEBO
Emitter Cut-off Current (IC=0)
VEB=5V
1
mA
*VCEO(sus)
Collector-Emitter Sustaining
Voltage (IB=0)
IC=100mA
45
-
-
V
*VCE(sat)
Collector-Emitter Saturation
Voltage
IC=2A, IB=0.2A
-
0.4
0.6
V
IC=10mA,VCE=5V
-
0.58
-
V
*VBE
Base-Emitter Voltage
IC=2A, VCE=1V
-
-
1.2
V
IC=10mA, VCE=5V
30
130
-
IC=0.5A, VCE=1V
85
140
-
*hFE
DC Current Gain
IC=2A, VCE=1V
40
-
-
fT
Transition Frequency
IC=0.25A, VCE=1V
3
-
-
MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
TO-126
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 2/3
HBD437T
HSMC Product Specification
Characteristics Curve
Safe Operating Area
0.01
0.1
1
10
1
10
100
Forward Voltage-V
CE
(V)
C
o
l
l
ec
t
o
r
C
u
r
r
ent
-
I
C
(A
)
1ms
100ms
1s
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current I
C
(mA)
hF
E
hFE @ V
CE
=1V
25
o
C
75
o
C
125
o
C
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current I
C
(mA)
hFE
hFE @ V
CE
=5V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
ag
e (
m
V
)
V
CE(sat)
@ I
C
=10I
B
75
o
C
125
o
C
25
o
C
On Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
O
n
V
o
l
t
a
ge (
m
V
)
V
BE(on)
@ V
CE
=1V
125
o
C
75
o
C
25
o
C
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 3/3
HBD437T
HSMC Product Specification
TO-126 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
1
-
*3
-
*3
F
0.0280
0.0319
0.71
0.81
2
-
*3
-
*3
G
0.0480
0.0520
1.22
1.32
3
-
*3
-
*3
H
0.1709
0.1890
4.34
4.80
4
-
*3
-
*3
I
0.0950
0.1050
2.41
2.66
A
0.1500
0.1539
3.81
3.91
J
0.0450
0.0550
1.14
1.39
B
0.2752
0.2791
6.99
7.09
K
0.0450
0.0550
1.14
1.39
C
0.5315
0.6102
13.50
15.50
L
-
*0.0217
-
*0.55
D
0.2854
0.3039
7.52
7.72
M
0.1378
0.1520
3.50
3.86
E
0.0374
0.0413
0.95
1.05
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
B
C
F
D
E
H
1 2 3
K
J
I
3
4
L
M
1
2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
HSMC Package Code: T
Marking:
Date Code
Control Code
H
T
4 3 7
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