HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification
HD122
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Description
The HD122 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
C
Junction Temperature ................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C) .................................................................................... 40 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 4 A
IC Collector Current (Pulse) .............................................................................................. 0.1 A
Electrical Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
100
-
-
V
IC=1mA
*BVCEO
100
-
-
V
IC=100mA
BVEBO
5
-
-
V
IE=100uA
ICEO
-
-
2
mA
VCE=50V
ICBO
-
-
1
mA
VCB=100V
IEBO
-
-
2
mA
VBE=5V
*VCE(sat)1
-
-
2.5
V
IC=1.5A, IB=30mA
*VCE(sat)2
-
-
2.8
V
IC=2A, IB=40mA
*VBE(on)
-
-
2.5
V
IC=3A, VCE=3V
*hFE1
1000
-
-
IC=0.5A, VCE=3V
*hFE2
1000
-
-
IC=3A, VCE=3V
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 2/4
HSMC Product Specification
Characteristics Curve
Collector Gain & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-IC (mA)
hF
E
-40C hFE @ V
CE
=4V
25C hFE @ V
CE
=4V
Sturation Voltage & Collector Current
100
1000
10000
100
1000
10000
Collector Current-IC (mA)
S
t
u
r
at
i
o
n
V
o
l
t
age (
m
V
)
-40C V
CE(sat)
@ I
C
=100I
B
25C V
CE(sat)
@ I
C
=100I
B
Sturation Voltage & Collector Current
100
1000
10000
100
1000
10000
Collector Current-IC (mA)
S
t
u
r
at
i
o
n
V
o
l
t
age (
m
V
)
25
X
C V
BE(sat)
@ I
C
=100I
B
-40
X
C V
BE(sat)
@ I
C
=100I
B
On Voltage & Collector Current
100
1000
10000
10
100
1000
10000
Collector Current-IC (mA)
On
V
o
l
t
a
g
e
(
m
V
)
25
X
C V
BE(on)
@ V
CE
=4V
-40
X
C V
BE(on)
@ V
CE
=4V
Switching Time & Collector Current
0.1
1
10
1
10
Collector Current-IC (A)
S
w
i
t
ch
i
n
g
T
i
m
e
s (
u
s)
Tstg
V
CC
=30V, I
C
=250, I
B1
= -250I
B2
Tf
Ton
Capacitance & Reverse-Biased Voltage
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
Ca
p
a
c
i
t
a
n
c
e
(
p
F
)
Cob
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 4/4
HSMC Product Specification
TO-126ML Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1356
0.1457
3.44
3.70
I
-
*0.1795
-
*4.56
B
0.0170
0.0272
0.43
0.69
J
0.0268
0.0331
0.68
0.84
C
0.0344
0.0444
0.87
1.12
K
0.5512
0.5906
14.00
15.00
D
0.0501
0.0601
1.27
1.52
L
0.2903
0.3003
7.37
7.62
E
0.1131
0.1231
2.87
3.12
M
0.1378
0.1478
3.50
3.75
F
0.0737
0.0837
1.87
2.12
N
0.1525
0.1625
3.87
4.12
G
0.0294
0.0494
0.74
1.25
O
0.0740
0.0842
1.88
2.14
H
0.0462
0.0562
1.17
1.42
Notes :
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
N
D
E
M
L
K
F
I
A
B
C
H
J
3
2
1
O
G
Style : Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
HSMC Package Code : D
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Marking
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