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Электронный компонент: HI117

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 1/4
HI117
HSMC Product Specification
HI117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI117 is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150
C
Junction Temperature .................................................................................................. +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C) ................................................................................................... 25 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................................. -100 V
BVCEO Collector to Emitter Voltage............................................................................................... -100 V
BVEBO Emitter to Base Voltage ......................................................................................................... -5 V
IC Collector Current (Continue) .......................................................................................................... -4 A
IC Collector Current (Peak) ................................................................................................................ -6 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-100
-
-
V
IC=-1mA
BVCEO
-100
-
-
V
IC=-30mA
ICBO
-
-
-1
mA
VCB=-100V
ICEO
-
-
-2
mA
VCE=-50V
IEBO
-
-
-2
mA
VEB=-5V
*VCE(sat)
-
-
-2.5
V
IC=-2A, IB=-8mA
*VBE(on)
-
-
-2.8
V
IC=-2A, VCE=-4V
*hFE1
1
-
-
K
IC=-1A, VCE=-4V
*hFE2
500
-
-
IC=-2A, VCE=-4V
Cob
-
-
200
pF
VCB=-10V, f=0.1MHz
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
Darlington Schematic
R2
R1
C
E
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 2/4
HI117
HSMC Product Specification
Characteristics Curve
Capacitance & Reverse-Biased Voltage
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
Ca
p
a
c
i
t
a
n
c
e
(
p
F
)
Cob
Switching Time & Collector Current
0.1
1
10
1
10
Collector Current (A)
S
w
it
c
h
in
g
T
i
m
e
(
u
s
)
V
CC
=30V, I
C
=250I
B1
=-250I
B2
Tstg
Tf
Ton
Current Gain & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
hF
E
hFE @ V
CE
=3V
hFE @ V
CE
=4V
Saturation Voltage & Collector Current
100
1000
10000
100000
100
1000
10000
Collector Current-I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
lt
a
g
e
(
m
V)
V
CE(sat)
@ I
C
=250I
B
V
CE(sat)
@ I
C
=100I
B
Saturation Voltage & Collector Current
100
1000
10000
100
1000
10000
Collector Current-I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
lt
a
g
e
(
m
V)
V
BE(sat)
@ I
C
=100I
B
V
BE(sat)
@ I
C
=250I
B
On Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
O
n
V
o
l
t
ag
e (
m
V
)
V
BE(on)
@ V
CE
=3V
V
BE(on)
@ V
CE
=4V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 3/4
HI117
HSMC Product Specification
Safe Operating Area
1
10
100
1000
10000
1
10
100
Forward Voltage-V
CE
(V)
Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
-
I
C
(m
A
)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 4/4
HI117
HSMC Product Specification
TO-251 Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.0177
0.0217
0.45
0.55
G
0.2559
-
6.50
-
B
0.0354
0.0591
0.90
1.50
H
-
*0.1811
-
*4.60
C
0.0177
0.0236
0.45
0.60
I
-
0.0354
-
0.90
D
0.0866
0.0945
2.20
2.40
J
-
0.0315
-
0.80
E
0.2520
0.2677
6.40
6.80
K
0.2047
0.2165
5.20
5.50
F
0.2677
0.2835
6.80
7.20
Notes :
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
A
E
F
G
H
J
I
3
2
1
K
C
D
B
Style : Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
HSMC Package Code : I
Marking:
Date Code
Ink Mark
2
1
7
H
I
Control Code