HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9004
Issued Date : 1994.01.25
Revised Date : 2001.05.31
Page No. : 1/2
HI3055
HSMC Product Specification
HI3055
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI3055 is designed for general purpose of amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature .................................................................................................... +150
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C) ..................................................................................... 20W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ...................................................................................... 70 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................ 10 A
IB Base Current .................................................................................................................... 6 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
70
-
-
V
IC=200mA, IE=0
BVCEO
60
-
-
V
IC=10mA, IB=0
BVEBO
5
-
-
V
IE=10mA, IC=0
ICBO
-
-
20
uA
VCB=70V, IE=0
ICEX
-
-
20
uA
VCE=70V, VEB(off)=1.5V
ICEO
-
-
50
uA
VCE=30V, IB=0
IEBO
-
-
0.5
mA
VEB=5V, IC=0
*VCE(sat)1
-
-
1.1
V
IC=4A, IB=400mA
*VCE(sat)2
-
-
8
V
IC=10A, IB=3.3A
*VBE(on)
-
-
1.8
V
VCE=4V, IC=4A
*hFE1
20
-
100
VCE=4V, IC=4A
*hFE2
5
-
-
VCE=4V, IC=10A
fT
2
-
-
MHz
VCE=10V, IC=500mA, f=1MHz
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9004
Issued Date : 1994.01.25
Revised Date : 2001.05.31
Page No. : 2/2
HI3055
HSMC Product Specification
TO-251 Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.0177
0.0217
0.45
0.55
G
0.2559
-
6.50
-
B
0.0354
0.0591
0.90
1.50
H
-
*0.1811
-
*4.60
C
0.0177
0.0236
0.45
0.60
I
-
0.0354
-
0.90
D
0.0866
0.0945
2.20
2.40
J
-
0.0315
-
0.80
E
0.2520
0.2677
6.40
6.80
K
0.2047
0.2165
5.20
5.50
F
0.2677
0.2835
6.80
7.20
Notes :
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
A
E
F
G
H
J
I
3
2
1
K
C
D
B
Style : Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
HSMC Package Code : I
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Mark
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