ChipFind - документация

Электронный компонент: HI32C

Скачать:  PDF   ZIP
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9002
Issued Date : 1994.03.02
Revised Date : 2002.01.17
Page No. : 1/3
HI32C
HSMC Product Specification
HI32C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI32C is designed for use in general purpose amplifier and low
speed switching applications.
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature .................................................................................................... +150
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C) ...................................................................................... 15W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................. -100 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current ............................................................................................................. -3 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-100
-
-
V
IC=-1mA, IE=0
BVCEO
-100
-
-
V
IC=-30mA, IB=0
ICES
-
-
-20
uA
VCE=-100V, VBE=0
ICEO
-
-
-50
uA
VCE=-60V, IB=0
IEBO
-
-
-1
mA
VEB=-5V, IC=0
*VCE(sat)
-
-
-1.2
V
IC=-3A, IB=-375mA
*VBE(on)
-
-
-1.8
V
VCE=-4V, IC=-3A
*hFE1
25
-
-
VCE=-4V, IC=-1A
*hFE2
10
-
50
VCE=-4V, IC=-3A
fT
3
-
-
MHz
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
TO-251
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9002
Issued Date : 1994.03.02
Revised Date : 2002.01.17
Page No. : 2/3
HI32C
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1
10
100
1000
10000
Collector Current I
C
(mA)
hFE
hFE @ V
CE
=4V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
100
1000
1
10
100
1000
10000
Collector Current I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
V
CE(sat)
@ I
C
=8I
B
25
o
C
75
o
C
125
o
C
ON Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
O
N
V
o
l
t
ag
e (
m
V
)
V
BE(ON)
@ V
CE
=4V
25
o
C
75
o
C
125
o
C
Switching Time & Collector Current
0.01
0.10
1.00
10.00
0.1
1.0
10.0
Collector Current (A)
S
w
i
t
ch
i
n
g
T
i
m
e
s (
u
s)
..
V
CC
=30V, I
C
=10I
B1
=-10I
B2
Tstg
Ton
Tf
Capacitance & Reverse-Biased Voltage
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
C
apa
c
i
t
anc
e
(
p
F)
Cob
Safe Operating Area
1
10
100
1000
10000
1
10
100
1000
Forward Voltage (V)
C
o
l
l
e
c
t
or
C
u
r
r
ent
(
m
A
)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9002
Issued Date : 1994.03.02
Revised Date : 2002.01.17
Page No. : 3/3
HI32C
HSMC Product Specification
TO-251 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.0177
0.0217
0.45
0.55
G
0.2559
-
6.50
-
B
0.0354
0.0591
0.90
1.50
H
-
*0.1811
-
*4.60
C
0.0177
0.0236
0.45
0.60
I
-
0.0354
-
0.90
D
0.0866
0.0945
2.20
2.40
J
-
0.0315
-
0.80
E
0.2520
0.2677
6.40
6.80
K
0.2047
0.2165
5.20
5.50
F
0.2677
0.2835
6.80
7.20
Notes:
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
E
F
G
H
J
I
3
2
1
K
C
D
B
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
HSMC Package Code: I
Marking:
Date Code
2
3
C
H
I
Control Code