HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
HIRF730, HIRF730F
HSMC Product Specification
HIRF730 / HIRF730F
N-CHANNEL POWER MOSFET
Description
Third Generation HEXFETs from international Rectifier provide the
designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-220AB
1.71
R
JC
Thermal Resistance
Junction to Case Max.
TO-220FP
3.3
C/W
R
JA
Thermal Resistance
Junction to Ambient Max.
62
C/W
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain-Source Voltage
400
V
I
D
Drain to Current (Continuous)
5.5
A
I
DM
Drain to Current (Pulsed) (*1)
22
A
V
GS
Gate-to-Source Voltage (Continue)
20
V
Total Power Dissipation
TO-220AB
TO-220FP
74
38
W
P
D
Derate above 25
C
TO-220AB
TO-220FP
0.58
0.3
W/
C
E
AS
Single Pulse Avalanche Energy (*2)
290
mJ
I
AR
Avalanche Current (*1)
5.5
A
E
AR
Repetitive Avalanche Energy (*1)
7.4
mJ
d
v
/d
t
Peak Diode Recovery (*3)
4
V/ns
T
j
Operating Temperature Range
-55 to 150
C
T
stg
Storage Temperature Range
-55 to 150
C
T
L
Maximum Lead Temperature for Soldering Purposes, 1/8" from
case for 10 seconds
300
C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: V
DD
=50V, starting T
j
=25
C, L=16mH, R
G
=25
, I
AS
=5.5A
*3: I
SD
5.5A, di/dt
90A/us, V
DD
V
(BR)DSS
, T
J
150
C
HIRF730 Series Pin Assignment
1 2
3
1 2
3
Tab
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
G
D
S
HIRF730 Series Symbol
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 2/4
HIRF730, HIRF730F
HSMC Product Specification
ELectrical Characteristics
(T
j
=25
C, unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
400
-
-
V
Drain-Source Leakage Current (V
DS
=400V, V
GS
=0V)
-
-
1
uA
I
DSS
Drain-Source Leakage Current (V
DS
=320V, V
GS
=0V, T
j
=125
C)
50
uA
I
GSSF
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
-
-
100
nA
I
GSSR
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
-
-
-100
nA
V
GS(th)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
2
-
4
V
R
DS(on)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=3.3A)(*4)
-
-
1
g
FS
Forward Transconductance (V
DS
=50V, I
D
=3.3A)(*4)
2.9
-
-
S
C
iss
Input Capacitance
-
700
-
C
oss
Output Capacitance
-
170
-
C
rss
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V, f=1MHz
-
64
-
pF
t
d(on)
Turn-on Delay Time
-
10
-
t
r
Rise Time
-
15
-
t
d(off)
Turn-off Delay Time
-
38
-
t
f
Fall Time
(V
DD
=200V, I
D
=3.5A, R
G
=12
,
R
D
=57
)(*4)
-
14
-
ns
Q
g
Total Gate Charge
-
-
38
Q
gs
Gate-Source Charge
-
-
5.7
Q
gd
Gate-Drain Charge
(V
DS
=320V, I
D
=3.5A, V
GS
=10V)
(*4)
-
-
22
nC
L
D
Internal Drain Inductance (Measured from the drain lead 0.25" from
package to center of die)
-
4.5
-
nH
L
S
Internal Source Inductance (Measured from the drain lead 0.25" from
package to source bond pad)
-
7.5
-
nH
*4: Pulse Test: Pulse Width
300us, Duty Cycle
2%
Source-Drain Diode
Symbol
Characteristic
Min.
Typ.
Max. Units
Q
rr
Reverse Recovery Charge
-
1.8
2.2
uC
t
on
Forward Turn-On Time
-
**
-
t
rr
Reverse Recovery Time
I
F
=3.5A, d
i
/d
t
=100A/us, T
j
=25
C
(*4)
-
270
530
ns
V
SD
Diode Forward Voltage
I
S
=5.5A, V
GS
=0V, T
j
=25
C (*4)
-
-
1.6
V
**: Negligible, Dominated by circuit inductance
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 3/4
HIRF730, HIRF730F
HSMC Product Specification
TO-220AB Dimension
TO-220FP Dimension
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
D
F
G
I
K
L
M
3
2
1
C
J
N
3
E
2
O
4
5
1
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
Tab
F
J
L
Marking:
Control Code
Date Code
H
F
7 3
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
I R
0
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
DIM
Min.
Max.
A
5.58
7.49
B
8.38
8.90
C
4.40
4.70
D
1.15
1.39
E
0.35
0.60
F
2.03
2.92
G
9.66
10.28
H
-
*16.25
I
-
*3.83
J
3.00
4.00
K
0.75
0.95
L
2.54
3.42
M
1.14
1.40
N
-
*2.54
O
12.70
14.27
P
14.48
15.87
*: Typical, Unit: mm
Marking:
Control Code
Date Code
H
F
7 3
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
I R
0 F
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
DIM
Min.
Max.
A
6.48
7.40
C
4.40
4.90
D
2.34
3.00
E
0.45
0.80
F
9.80
10.36
G
3.10
3.60
I
2.70
3.43
J
0.60
1.00
K
2.34
2.74
L
12.48
13.60
M
15.67
16.20
N
0.90
1.47
O
2.00
2.96
1/2/4/5
-
*5
o
3
-
*27
o
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 4/4
HIRF730, HIRF730F
HSMC Product Specification
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (T
L
to T
P
)
<3
o
C/sec
<3
o
C/sec
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
Tsmax to T
L
- Ramp-up Rate
<3
o
C/sec
<3
o
C/sec
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
183
o
C
60~150 sec
217
o
C
60~150 sec
Peak Temperature (T
P
)
240
o
C +0/-5
o
C
260
o
C +0/-5
o
C
Time within 5
o
C of actual Peak
Temperature (t
P
)
10~30 sec
20~40 sec
Ramp-down Rate
<6
o
C/sec
<6
o
C/sec
Time 25
o
C to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
o
C
5
o
C
5sec
1sec
Pb-Free devices.
260
o
C +0/-5
o
C
5sec
1sec
Figure 1: Temperature profile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25
t 25
o
C to Peak
Time
Tem
p
erature
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