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Электронный компонент: HJ112

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6030
Issued Date : 1998.07.01
Revised Date : 2002.08.13
Page No. : 1/4
HJ112
HSMC Product Specification
HJ112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ112 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature ...................................................................................... 150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C)..................................................................................... 20 W
Maximum Voltages and Currents (Ta=25
C)
VCBO Collector to Base Voltage ....................................................................................... 100 V
VCEO Collector to Emitter Voltage .................................................................................... 100 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current .............................................................................................................. 4 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
100
-
-
V
IC=1mA
BVCEO
100
-
-
V
IC=30mA
ICBO
-
-
10
uA
VCB=80V
ICEO
-
-
20
uA
VCE=50V
IEBO
-
-
2
mA
*VCE(sat)1
-
-
2.5
V
IC=2A, IB=8mA
*VBE(on)
-
-
2.8
V
IC=2A, VCE=3V
*hFE1
500
-
-
IC=0.5A, VCE=3V
*hFE2
1
-
12
K
IC=2A, VCE=3V
*hFE3
200
-
-
IC=4A, VCE=3V
Cob
-
-
100
pF
VCB=10V
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
TO-252
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6030
Issued Date : 1998.07.01
Revised Date : 2002.08.13
Page No. : 2/4
HJ112
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
hF
E
25
o
C
125
o
C
75
o
C
hFE @ V
CE
=4V
Current Gain & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
hF
E
25
o
C
125
o
C
75
o
C
hFE @ V
CE
=3V
Saturation Voltage & Collector Current
100
1000
10000
100
1000
10000
Collector Current I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
ag
e (
m
V
)
V
CE(sat)
@ I
C
=100I
B
125
o
C
75
o
C
25
o
C
Saturation Voltage & Collector Current
100
1000
10000
100
1000
10000
Collector Current I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
ag
e (
m
V
)
V
CE(sat)
@ I
C
=250I
B
125
o
C
75
o
C
25
o
C
Saturation Voltage & Collector Current
100
1000
10000
100
1000
10000
Collector Current I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
BE(sat)
@ I
C
=250I
B
125
o
C
75
o
C
25
o
C
ON Voltage & Collcetor Current
100
1000
10000
100
1000
10000
Collector Current I
C
(mA)
O
N
V
o
l
t
age
(
m
V
)
V
BE(ON)
@ V
CE
=4V
25
o
C
75
o
C
125
o
C
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6030
Issued Date : 1998.07.01
Revised Date : 2002.08.13
Page No. : 3/4
HJ112
HSMC Product Specification
ON Voltage & Collcetor Current
100
1000
10000
100
1000
10000
Collector Current I
C
(mA)
O
N
V
o
l
t
age
(
m
V
)
V
BE(ON)
@ V
CE
=3V
25
o
C
75
o
C
125
o
C
Switching Time & Collector Current
0.1
1
10
1
10
Collector Current (A)
S
w
i
t
ch
i
n
g
T
i
m
e
s (
u
s
)
V
CC
=30V, I
C
=250I
B1
=-250I
B2
Tstg
Tf
Ton
Capacitance & Reverse-Biased Voltage
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
C
apac
i
t
a
n
c
e
(
p
F
)
Cob
Safe Operating Area
1
10
100
1000
10000
1
10
100
1000
Forward Voltage (V)
Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
m
A
)
P
T
=1ms
P
T
=100ms
P
T
=1s
PD - Tc
0
5
10
15
20
25
0
50
100
150
200
Temperature-Tc (
o
C)
P
D
(
W
)
,
P
o
we
r
Dis
s
i
p
a
t
io
n
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6030
Issued Date : 1998.07.01
Revised Date : 2002.08.13
Page No. : 4/4
HJ112
HSMC Product Specification
TO-252 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.0177
0.0217
0.45
0.55
G
0.0866
0.1102
2.20
2.80
B
0.0650
0.0768
1.65
1.95
H
-
*0.0906
-
*2.30
C
0.0354
0.0591
0.90
1.50
I
-
0.0354
-
0.90
D
0.0177
0.0236
0.45
0.60
J
-
0.0315
-
0.80
E
0.2520
0.2677
6.40
6.80
K
0.2047
0.2165
5.20
5.50
F
0.2125
0.2283
5.40
5.80
L
0.0551
0.0630
1.40
1.60
Notes:
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
B
A
C
E
H
I
J
K
3
2
1
D
F
G
L
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code: J
Marking:
Date Code
1
1
2
H
J
Control Code