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Электронный компонент: HLB121J

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 1/3
HLB121J
HSMC Product Specification
HLB121J
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121J is a medium power transistor designed for use in
switching applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature .................................................................................................... +150
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C) .................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage ........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=100uA
BVCEO
400
-
650
V
IC=10mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
10
uA
VCB=550V
ICEO
-
-
10
uA
VCB=400V
IEBO
-
-
10
uA
VEB=6V
*VCE(sat)1
-
-
400
mV
IC=50mA, IB=10mA
*VCE(sat)2
-
-
750
mV
IC=100mA, IB=20mA
*VBE(sat)
-
-
1
V
IC=50mA, IB=10mA
*hFE1
8
-
-
VCE=10V, IC=10mA
*hFE2
10
-
36
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 2/3
HLB121J
HSMC Product Specification
Characteristics Curve
Dc Current Gain & Collector Current
1
10
100
1
10
100
1000
Collector Current (mA)
hF
E
hFE @ V
CE
=10V
Saturation Voltage & Collector Current
10
100
1000
10000
100000
1
10
100
1000
Collector Current (mA)
S
a
t
u
r
a
t
i
on
V
o
l
t
age (
m
V
)
V
BE(sat)
@ I
C
=5I
B
V
CE(sat)
@ I
C
=5I
B
On Voltage & Collector Current
100
1000
10000
0
100
200
300
400
500
600
Collector Current (mA)
On
V
o
l
t
a
g
e
-
B
to
n
Bton @ V
CE
=10V
Capacitance Reverse-Biased Voltage
1
10
100
1000
0.1
1
10
100
Reverse Biased Voltage (V)
Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
(
m
A
)
Cib
Cob
Switching Time & Collector Current
0.1
1
10
0
100
200
300
400
500
600
Collector Current (mA)
S
w
it
c
h
in
g
T
i
m
e
(
u
s
)
Tf
V
CC
=100V, I
C
=5I
B1
=-5I
B2
Ton
Tstg
Safe Operating Area
10
100
1000
10000
0
50
100
150
200
250
Forward Biased Voltage (V)
Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
(
m
A
)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 3/3
HLB121J
HSMC Product Specification
TO-252 Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.0177
0.0217
0.45
0.55
G
0.0866
0.1102
2.20
2.80
B
0.0650
0.0768
1.65
1.95
H
-
*0.0906
-
*2.30
C
0.0354
0.0591
0.90
1.50
I
-
0.0354
-
0.90
D
0.0177
0.0236
0.45
0.60
J
-
0.0315
-
0.80
E
0.2520
0.2677
6.40
6.80
K
0.2047
0.2165
5.20
5.50
F
0.2125
0.2283
5.40
5.80
L
0.0551
0.0630
1.40
1.60
Notes :
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
B
A
C
E
H
I
J
K
3
2
1
D
F
G
L
Style : Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code : J
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Mark