HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200208
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 1/3
HLB122T
HSMC Product Specification
HLB122T
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122T is a medium power transistor designed for use in switching
applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
C
Junction Temperature ................................................................................................................ +150
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C)................................................................................................. 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 6 V
IC Collector Current (DC)............................................................................................................ 800 mA
IC Collector Current (Pulse)...................................................................................................... 1600 mA
IB Base Current (DC).................................................................................................................. 100 mA
IB Base Current (Pulse).............................................................................................................. 200 mA
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=100uA
BVCEO
400
-
-
V
IC=10mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
10
uA
VCB=600V
ICEO
-
-
10
uA
VCE=400V
IEBO
-
-
10
uA
VEB=6V
*VCE(sat)1
-
-
400
mV
IC=100mA, IB=20mA
*VCE(sat)2
-
-
800
mV
IC=300mA, IB=60mA
*VBE(sat)
-
-
1
V
IC=100mA, IB=20mA
*hFE1
10
-
40
VCE=10V, IC=0.1A
*hFE2
10
-
-
VCE=10V, IC=0.5A
tf
-
-
0.6
uS
VCC=100V, IC=0.3A,IB1=-IB2=0.06A
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification of hFE1
Rank
B1
B2
B3
B4
B5
B6
Range
10-17
13-22
18-27
23-32
28-37
33-40
TO-126
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200208
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 2/3
HLB122T
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1
10
100
1000
Collector Current-I
C
(mA)
hFE
hFE @ VCE=10V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
125
o
C
75
o
C
25
o
C
V
BE(sat)
@ I
C
=5I
B
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
Reverse-Biased Voltage (V)
C
apac
i
t
a
n
c
e
(
p
F
)
Cob
Safe Operatig Area
0.01
0.1
1
10
1
10
100
1000
Forward-V
CE
(V)
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t-
I
C
(A
)
PT=400ms
PT=100ms
PT=1ms
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200208
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 3/3
HLB122T
HSMC Product Specification
TO-126 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
1
-
*3
-
*3
F
0.0280
0.0319
0.71
0.81
2
-
*3
-
*3
G
0.0480
0.0520
1.22
1.32
3
-
*3
-
*3
H
0.1709
0.1890
4.34
4.80
4
-
*3
-
*3
I
0.0950
0.1050
2.41
2.66
A
0.1500
0.1539
3.81
3.91
J
0.0450
0.0550
1.14
1.39
B
0.2752
0.2791
6.99
7.09
K
0.0450
0.0550
1.14
1.39
C
0.5315
0.6102
13.50
15.50
L
-
*0.0217
-
*0.55
D
0.2854
0.3039
7.52
7.72
M
0.1378
0.1520
3.50
3.86
E
0.0374
0.0413
0.95
1.05
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
B
C
F
D
E
H
1 2 3
K
J
I
3
4
L
M
1
2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
HSMC Package Code: T
Marking:
Date Code
Control Code
H
B
1 2 2
L
T
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