HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 1/4
HLB124E
HSMC Product Specification
HLB124E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB124E is designed for high voltage, high speed switching inductive
circuits, and amplifier applications.
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
C
Junction Temperature ................................................................................................................ +150
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C)................................................................................................. 35 W
Maximum Voltages and Currents (Ta=25
C)
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC)................................................................................................................... 2 A
IC Collector Current (Pulse)............................................................................................................... 4 A
IB Base Current (DC)..........................................................................................................................1 A
IB Base Current (Pulse)..................................................................................................................... 2 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=1mA
BVCEO
400
-
-
V
IC=10mA
BVEBO
8
-
-
V
IE=1mA
ICBO
-
-
10
uA
VCB=600V
IEBO
-
-
10
uA
VEB=9V, IC=0
*VCE(sat)1
-
-
0.3
V
IC=0.1A, IB=10mA
*VCE(sat)2
-
-
0.8
V
IC=0.3A, IB=30mA
*VBE(sat)1
-
-
0.9
V
IC=0.1A, IB=10mA
*VBE(sat)2
-
-
1.2
V
IC=0.3A, IB=30mA
*hFE1
10
-
40
VCE=5V, IC=0.3A
*hFE2
10
-
-
VCE=5V, IC=0.5A
*hFE3
6
-
-
VCE=5V, IC=1A
fT
15
-
-
MHz
VCE=10V, IC=0.3, f=1MHz
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
Classification of hFE1
Rank
B1
B2
B3
B4
B5
B6
Range
10~17
13~22
18~27
23~32
28~37
33~40
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 2/4
HLB124E
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1
10
100
1000
10000
Collector Current I
C
(mA)
hFE
25
o
C
75
o
C
125
o
C
hFE @ V
CE
=5V
Saturation Voltage & Collector Current
10
100
1000
10000
100000
1
10
100
1000
10000
Collector Current I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
ag
e (
m
V
)
25
o
C
75
o
C
125
o
C
V
BE(sat)
@ I
C
=10I
B
On Voltage & Collector Current
100
1000
1
10
100
1000
10000
Collector Current (mA)
O
n
V
o
l
t
age (
m
V
)
V
CE
=5V
Capacitance & Reverse-Biased Voltage
1
10
100
1
10
100
Reverse Biased Voltage (V)
C
a
pac
i
t
an
c
e
(
P
f
)
Cob
Switching Time & Collector Current
0.1
1
10
0.1
1
10
Collector Current (A)
S
wit
c
h
in
g
T
i
m
e
(
u
s
)
Tstg
Tf
Ton
V
CC
=100V, I
C
=5I
B1
=5I
B2
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 4/4
HLB124E
HSMC Product Specification
TO-220AB Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.2197
0.2949
5.58
7.49
I
-
*0.1508
-
*3.83
B
0.3299
0.3504
8.38
8.90
K
0.0295
0.0374
0.75
0.95
C
0.1732
0.185
4.40
4.70
M
0.0449
0.0551
1.14
1.40
D
0.0453
0.0547
1.15
1.39
N
-
*0.1000
-
*2.54
E
0.0138
0.0236
0.35
0.60
O
0.5000
0.5618
12.70
14.27
G
0.3803
0.4047
9.66
10.28
P
0.5701
0.6248
14.48
15.87
H
-
*0.6398
-
*16.25
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
Marking:
HSMC Logo
Part Number
Date Code
Product Series
Rank
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