HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6538
Issued Date : 1997.01.18
Revised Date : 2002.10.25
Page No. : 1/3
HMBD914
HSMC Product Specification
HMBD914
HIGH-SPEED SWITCHING DIODE
Description
The HMBD914 is designed for high-speed switching application in hybrid
thick-and thin-film circuits. The device is manufactured by the silicon
epitaxial planar process and packed in plastic surface mount package.
Features
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................ -65 ~ +150
C
Junction Temperature ................................................................................................................ +150
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C)............................................................................................. 250 mW
Maximum Voltages and Currents (Ta=25
C)
Repetitive Peak Reverse Voltage.................................................................................................... 85 V
VR Coinuous Reverse Voltage........................................................................................................ 70 V
IF Continuous Forward Current................................................................................................... 200 mA
IFSM Peak Forward Surge Current............................................................................................. 500 mA
IFSM Non-Repetitive Peak Forward Current t=1uS ........................................................................... 4 A
IFSM Non-Repetitive Peak Forward Current t=1mS .......................................................................... 1 A
IFSM Non-Repetitive Peak Forward Current t=1S .......................................................................... 0.5 A
Characteristics
(Ta=25
C)
Characteristic
Symbol
Condition
Min
Max
Unit
Forward Voltage
VF
IF=10mA
-
1
V
Reverse Breakdown Voltage
VR
IR=100uA
100
V
IR(1)
VR=25V
-
25
nA
Reverse Current
IR(2)
VR=75V
-
5
uA
Diode Capacitance
Cd
VR=0, F=1MHz
-
1.5
pF
Reverse Recovery Time
Trr
IF=IR=10mA, RL=100
Measured at IR=1mA
-
4
ns
SOT-23
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6538
Issued Date : 1997.01.18
Revised Date : 2002.10.25
Page No. : 2/3
HMBD914
HSMC Product Specification
Characteristics Curve
Forward Biased Voltage & Forward Current
0
150
300
450
0
500
1000
1500
2000
Forward Biased Voltage-V
F
(mV)
Cu
r
r
e
n
t
-
I
F
(m
A
)
Capacitance & Reverse-Biased Voltage
0.1
1
0.1
1
10
100
Reverse-Biased Voltage-V
R
(V)
C
apa
c
i
t
a
n
c
e-
C
d
(
p
F)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6538
Issued Date : 1997.01.18
Revised Date : 2002.10.25
Page No. : 3/3
HMBD914
HSMC Product Specification
SOT-23 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1102
0.1204
2.80
3.04
J
0.0034
0.0070
0.085
0.177
B
0.0472
0.0630
1.20
1.60
K
0.0128
0.0266
0.32
0.67
C
0.0335
0.0512
0.89
1.30
L
0.0335
0.0453
0.85
1.15
D
0.0118
0.0197
0.30
0.50
S
0.0830
0.1083
2.10
2.75
G
0.0669
0.0910
1.70
2.30
V
0.0098
0.0256
0.25
0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Anode 2.NC 3.Cathode
3-Lead SOT-23 Plastic Surface Mounted Package
HSMC Package Code: N
Marking:
Rank Code
5 D
Control Code
Diagram:
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