HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2001.09.06
Page No. : 1/2
HMX1225 & HMM1225
HSMC Product Specification
HMX1225
HMM1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
The HMX1225/HMM1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.
Absolute Maximum Ratings
(Ta=25
C)
Parameter
Part No.
Symbol
Min. Max. Unit
Test Conditions
Repetitive Peak Off State
Voltage
HMX1225
HMM1225
VDRM
VDRM
380
300
-
-
V
V
Tj=40
C to 125
C
(RGK=1K)
On-State Current
IT(rms)
0.8
-
A
TC=40
C
Average On-State Current
IT(AV)
0.5
-
A
Half Cycle=180
,TC=40
C
Peak Reverse Gate Voltage
VGRM
8
-
V
IGR=10uA
Peak Gate Current
IGM
1
-
A
10us max
Gate Dissipation
PG(AV)
0.1
-
W
20ms max
Operating Temperature
Tj
-40
125
C
Storage Temperature
Tstg
-40
125
C
Soldering Temperature
Tsld
-
250
C
1.6mm from case 10s max
Classification Of IGT
Rank
A
C
HMX1225
10-23 uA
17-55 uA
HMM1225
10-23 uA
17-55 uA
Electrical Characteristics
(Ta=25
C)
Parameter
Symbol Min Max Unit
Test Conditions
Off-State Leakage Current
IDRM
-
0.1
mA
@VDRM (RGK=1K), Tj=125
C
Off-State Leakage Current
IDRM
-
5
uA
@VDRM (RGK=1K), Tj=25
C
-
1.4
V
at IT=0.4A, Tj=25
C
On-State Voltage
VT
-
2.2
V
at IT=0.8A, Tj=25
C
On-State Threshold Voltage
VT(TO)
-
0.95
V
Tj=125
C
On-State Slops Resistance
rT
-
600 Ohm Tj=125
C
Gate Trigger Current
IGT
-
200
uA
VD=7V
Gate Trigger Voltage
VGT
-
0.8
V
VD=7V
Holding Current
IH
-
5
mA
RGK=1K(ohm)
Latching Current
IL
-
6
mA
RGK=1K(ohm)
Critical Rate of Voltage Rise
dv/dt
25
-
V/us VD=0.67*VDRM(RGK=1K), Tj=125
C
Crtical Rate of Current Rise
di/dt
30
-
A/us IG=10mA,diG/dt=0.1A/us, Tj=125
C
Gate Controlled Delay Time
tgd
-
500
ns
IG=10mA,diG/dt=0.1A/us
Commutated Turn-off Time
tg
-
200
us
Tc=85
C,VD=0.67*VDRM
VR=35V,IT=IT(AV)
Thermal Resistance junc.to case
R
jc
100
-
K/W
Thermal Resistance junc. to amb
R
ja
200
-
K/W
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2001.09.06
Page No. : 2/2
HMX1225 & HMM1225
HSMC Product Specification
SOT-89 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1732
0.1811
4.40
4.60
F
0.0583
0.0598
1.48
1.52
B
0.1594
0.1673
4.05
4.25
G
0.1165
0.1197
2.96
3.04
C
0.0591
0.0663
1.50
1.70
H
0.0551
0.0630
1.40
1.60
D
0.0945
0.1024
2.40
2.60
I
0.0138
0.0161
0.35
0.41
E
0.0141
0.0201
0.36
0.51
Notes:
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
2
1
A
B
C
D
E
F
G
H
I
Style: Pin 1.Gate 2.Anode 3.Cathode
HMM1225 Marking:
Date Code
H
1
M M
2 2 5
Laser Marking
3-Lead SOT-89 Plastic Surface Mounted Package
HSMC Package Code: M
HMX1225 Marking:
Date Code
H
1
M X
2 2 5
Laser Marking
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