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Электронный компонент: HSB772S

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 1/4
HSB772S
HSMC Product Specification
HSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772S is designed for using in output stage of 0.75W
amplifier, voltage regulator, DC-DC converter and driver.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150
C
Junction Temperature.................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C) ............................................................................... 750 mW
Maximum Voltages and Currents (Ta=25
C)
VCBO Collector to Base Voltage........................................................................................ -40 V
VCEO Collector to Emitter Voltage..................................................................................... -30 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ............................................................................................................. -3 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA, IE=0
BVCEO
-30
-
-
V
IC=-1mA, IB=0
BVEBO
-5
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-1
uA
VCB=-30V, IE=0
IEBO
-
-
-1
uA
VEB=-3V, IC=0
*VCE(sat)
-
-0.3
-0.5
V
IC=-2A, IB=-0.2A
*VBE(sat)
-
-1
-2
V
IC=-2A, IB=-0.2A
*hFE1
30
-
-
VCE=-2V, IC=-20mA
*hFE2
100
160
400
VCE=-2V, IC=-1A
fT
-
80
-
MHz
VCE=-5V, IC=-0.1A, f=100MHz
Cob
-
55
-
pF
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification Of hFE2
Rank
Q
P
E
Range
100-200
160-320
200-400
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 2/4
HSB772S
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
hFE
25
o
C
75
o
C
125
o
C
hFE @ V
CE
=2V
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
25
o
C
125
o
C
75
o
C
V
CE(sat)
@ I
C
=20I
B
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=40I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
125
o
C
25
o
C
75
o
C
V
BE(sat)
@ I
C
=10I
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 3/4
HSB772S
HSMC Product Specification
Cutoff Frequency & Collector Current
1
10
100
1000
1
10
100
1000
Collector Current (mA)
C
u
t
o
f
f
F
r
eque
nc
y
(
M
H
z
)
...
V
CE
=5V
Capacitance & Reverse-Biased Voltage
1
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
Capac
i
t
a
n
c
e
(
p
F
)
Cob
Safe Operation Area
0.01
0.1
1
10
100
1
10
100
Forward Biased Voltage (V)
Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
A
)
PT=1ms
PT=100ms
PT=1s
Power Derating
0
100
200
300
400
500
600
700
800
0
50
100
150
200
Ambient Temperature-Ta (
o
C)
P
o
we
r
Dis
s
i
p
a
t
io
n
-
P
D
(
m
W
)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 4/4
HSB772S
HSMC Product Specification
TO-92 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1704
0.1902
4.33
4.83
G
0.0142
0.0220
0.36
0.56
B
0.1704
0.1902
4.33
4.83
H
-
*0.1000
-
*2.54
C
0.5000
-
12.70
-
I
-
*0.0500
-
*1.27
D
0.0142
0.0220
0.36
0.56
1
-
*5
-
*5
E
-
*0.0500
-
*1.27
2
-
*2
-
*2
F
0.1323
0.1480
3.36
3.76
3
-
*2
-
*2
Notes:
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
HSMC Package Code: A
Marking:
H
B
7
7
2
Date Code
Control Code
S
Rank
S