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Электронный компонент: HSD1616A

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6534
Issued Date : 1998.06.01
Revised Date : 2002.02.18
Page No. : 1/4
HSD1616A
HSMC Product Specification
HSD1616A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD1616A is designed for audio frequency power amplifier and
medium speed switching applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature ...................................................................................... 150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C) ................................................................................ 750 mW
Maximum Voltages and Currents (Ta=25
C)
VCBO Collector to Base Voltage ....................................................................................... 120 V
VCEO Collector to Emitter Voltage ...................................................................................... 60 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current (DC) ...................................................................................................... 1 A
IC Collector Current *(Pulse) ................................................................................................. 2 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
120
-
-
V
IC=100uA
BVCEO
60
-
-
V
IC=1mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
100
nA
VCB=60V
IEBO
-
-
100
nA
VEB=6V
*VCE(sat)
-
150
300
mV
IC=1A, IB=50mA
*VBE(sat)
-
0.9
1.2
V
IC=1A, IB=50mA
VBE(on)
600
-
700
mV
VCE=2V, IC=50mA
*hFE1
135
-
600
VCE=2V, IC=100mA
*hFE2
81
-
-
VCE=2V, IC=1A
fT
100
160
-
MHz
VCE=2V, IC=100mA
Cob
-
-
19
pF
IE=0, VCB=10V, f=1MHz
ton
-
0.07
-
uS
VCE=10V, IC=100mA
ts
-
0.95
-
uS
IB1=-IB2=10mA
tf
-
0.07
-
uS
VBE(off)=-2~-3V
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification of hFE1
Rank
Y
G
L
Range
135-270
200-400
300-600
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6534
Issued Date : 1998.06.01
Revised Date : 2002.02.18
Page No. : 2/4
HSD1616A
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
hF
E
hFE @ V
CE
=2V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=20I
B
Saturation Voltage & Collector Current
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
125
o
C
75
o
C
25
o
C
V
BE(sat)
@ I
C
=20I
B
ON Voltage & Collector Current
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
O
N
V
o
l
t
age (
m
V
)
125
o
C
75
o
C
25
o
C
V
BE(ON)
@ V
CE
=2V
Capacitance & Reverse-Biased Voltage
10
100
0.1
1
10
100
Reverse Biased Voltage (V)
C
a
pa
c
i
t
a
n
c
e (
P
f
)
Cob
Cutoff Frequency & Collector Current
10
100
1000
1
10
100
1000
Collector Current (mA)
C
u
t
o
f
f
F
r
e
quen
c
y
(
M
H
z
)
...
fT @ V
CE
=2V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6534
Issued Date : 1998.06.01
Revised Date : 2002.02.18
Page No. : 3/4
HSD1616A
HSMC Product Specification
Safe Operating Area
1
10
100
1000
10000
1
10
100
Forward Voltage (V)
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
(mA
)
P
T
=1ms
P
T
=100ms
P
T
=1s
Power Derating
0
100
200
300
400
500
600
700
800
0
50
100
150
200
Ambient Temperature-Ta (
o
C)
P
o
we
r
Dis
s
i
p
a
t
io
n
-
P
D
(
m
W
)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6534
Issued Date : 1998.06.01
Revised Date : 2002.02.18
Page No. : 4/4
HSD1616A
HSMC Product Specification
TO-92 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1704
0.1902
4.33
4.83
G
0.0142
0.0220
0.36
0.56
B
0.1704
0.1902
4.33
4.83
H
-
*0.1000
-
*2.54
C
0.5000
-
12.70
-
I
-
*0.0500
-
*1.27
D
0.0142
0.0220
0.36
0.56
1
-
*5
-
*5
E
-
*0.0500
-
*1.27
2
-
*2
-
*2
F
0.1323
0.1480
3.36
3.76
3
-
*2
-
*2
Notes:
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
HSMC Package Code: A
Marking:
H
D
6
1
1
Date Code
Control Code
Rank
S
6 A