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Электронный компонент: HSD313

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 1/4
HSD313
HSMC Product Specification
HSD313
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD313 is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
C
Junction Temperature .................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C) ....................................................................................... 2 W
Total Power Dissipation (Tc=25
C) ..................................................................................... 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 60 V
BVCEO Collector to Emitter Voltage.................................................................................... 60 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=1mA, IE=0
BVCEO
60
-
-
V
IC=10mA, IB=0
BVEBO
5
-
-
V
IE=100uA, IC=0
ICBO
-
-
0.1
mA
VCB=20V, IE=0
ICEO
-
-
5
mA
VCE=60V, IB=0
IEBO
-
-
1
mA
VEB=4V, IC=0
*VCE(sat)
-
-
1
V
IC=2A, IB=0.2A
*VBE(on)
-
-
1.5
V
IC=1A, VCE=2V
*hFE1
40
-
320
IC=1A, VCE=2V
*hFE2
40
-
-
IC=0.1A, VCE=2V
ft
-
8
-
V
VCE=5V, IC=0.5A
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification Of hFE1
Rank
C
D
E
F
hFE
40-80
60-120
100-200
160-320
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 2/4
HSD313
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
hFE
hFE @ V
CE
=2V
125
o
C
75
o
C
25
o
C
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
hFE
hFE @ V
CE
=4V
125
o
C
75
o
C
25
o
C
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
V
CE(sat)
@ I
C
=10I
B
25
o
C
125
o
C
75
o
C
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
CE(sat)
@ I
C
=50I
B
125
o
C
75
o
C
25
o
C
ON Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
O
N
V
o
l
t
age
(
m
V
)
V
BE(ON)
@ V
CE
=2V
25
o
C
75
o
C
125
o
C
Switching Time & Collector Current
0.01
0.10
1.00
10.00
0.1
1.0
10.0
Collector Current (A)
S
w
i
t
ch
i
n
g
T
i
m
e
s (
u
s)
...
V
CC
=30V, I
C
=10I
B1
= -10I
B2
Tstg
Tf
Ton
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 3/4
HSD313
HSMC Product Specification
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
Revers-Biased Voltage (V)
C
a
pa
c
i
t
a
nc
e
(
p
F
)
Cob
Safe Operating Area
1
10
100
1000
10000
100000
1
10
100
Forward Voltage-V
CE
(V)
C
o
l
l
e
c
t
o
r C
u
rre
n
t
-I
C
(mA
)
P
T
=1ms
P
T
=100ms
P
T
=1s
Output Characteristics at
IB=1mA,2mA,3mA...10mA
0
200
400
600
800
1000
1200
1400
1600
0
5
10
15
Collector Voltage (V)
Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
m
A
)
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8mA
IB=9mA
IB=10mA
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 4/4
HSD313
HSMC Product Specification
TO-220AB Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.2197
0.2949
5.58
7.49
I
-
*
0.1508
-
*
3.83
B
0.3299
0.3504
8.38
8.90
K
0.0295
0.0374
0.75
0.95
C
0.1732
0.185
4.40
4.70
M
0.0449
0.0551
1.14
1.40
D
0.0453
0.0547
1.15
1.39
N
-
*
0.1000
-
*
2.54
E
0.0138
0.0236
0.35
0.60
O
0.5000
0.5618
12.70
14.27
G
0.3803
0.4047
9.66
10.28
P
0.5701
0.6248
14.48
15.87
H
-
*
0.6398
-
*
16.25
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
Marking:
Date Code
Control Code
H
3
S D
1 3
Rank