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Электронный компонент: HSK1118

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 1/5
HSMC Product Specification
HSK1118
Description
Field Effect Transistor.
Silicon N Channel MOS Type.
High Speed, High Current DC-DC Converter, Relay Drive and
Motor Drive Applications
Features
4-Volt Gate Drive
Low Drain-Source On Resistanc - R
DS(on)
=0.95
(Typ.)
High Forward Transfer Admittance - | Yfs |=4.0S (Typ.)
Low Leakage Current - I
DSS
= 300uA (Max.) @V
DS
= 600V
Enhancement-Mode - V
th
= 1.5~3.5V @V
DS
= 10V, I
D
= 1mA
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature ...................................................................................................... 150
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C) .................................................................................... 45 W
Maximum Voltages and Currents (Tc=25
C)
DRAIN to SOURCE Breakdown Voltage .......................................................................... 600 V
DRAIN to GATE Breakdown Voltage ................................................................................ 600 V
GATE to SOURCE Voltage ...............................................................................................
30 V
DRAIN Current (Cont.).......................................................................................................... 6 A
DRAIN Current (Pluse) ....................................................................................................... 24 A
Thermal Characteristics
Characteristic
Symbol
Max.
Units
Junction to Case
R
JC
2.77
C/W
Junction to Ambient
R
JA
62.5
C/W
Note : This transistor is an electrostatic sensitive device. Please handle with care.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 2/5
HSMC Product Specification
Characteristics
(Ta=25
C)
Characteristics
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
V
(BR)DSS
600
-
-
V
I
D
=250uA
Gate Threshold Voltage
V
GS(th)
2
-
4
V
V
DS
=10V, I
D
=1mA
Drain Cut-Off Current
I
DSS
-
-
25
uA
V
DS
=600V
Gate Leakage Current
I
GSS
-
-
100 nA
V
GS
=
25V
Drain-Source On Voltage
V
DS(ON)
-
-
6
V
I
D
=5.0A, V
G
=10V
On-State Drain Current
I
D(ON)
9
-
-
A
V
DS
=10V, V
GS
=10V
Drain-Source ON Resistance
R
DS(ON)
-
0.95 1.25
V
GS
=10V, I
D
=3A
Input Capacitance
Ciss
-
2000
-
pF
Reverse Transfer Capacitance
Crss
-
500
-
pF
Output Capacitance
Coss
-
740
-
pF
V
DS
=10V ,V
GS
=0V
f =1MHz
T
r
-
50
-
T
on
-
80
-
T
f
-
40
-
Switching Time
T
off
-
170
-
nS
V
IN
: Tr, Tf<5nS
V
DD
=300V, I
D
=3A
V
GS
=10V
Duty
1%, tw=10uS
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Q
g
-
60
-
nC
Gate-Source Charge
Q
gs
-
30
-
nC
Gate-Drain Charge (Miller)
Q
gd
-
30
-
nC
I
D
=6A
V
DS
=400V
V
GS
=10V
Characteristics Curve
On-Region Characteristic
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
, Drain-Source Voltage (V)
I
D
D
r
a
i
n-
S
o
ur
c
e
C
u
r
r
e
n
t
(
A
)
V
GS
=10V
4.5V
4V
6V
5V
5.5V
On-Region Characteristic
0
2
4
6
8
10
0
20
40
60
80
100
V
DS
,Drain-Source Voltage (V)
I
D
D
r
a
i
n-
S
o
ur
c
e
C
u
r
r
e
n
t
(
A
)
V
GS
=6V
4.5V
4V
10V
5V
5.5V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 3/5
HSMC Product Specification
Drain Current Variation & Gate Voltage &
Temperature
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
V
GS
, Gate-Source Voltage (V)
I
D
D
r
a
i
n-
S
o
ur
c
e
C
u
r
r
e
n
t
(
A
)
Tc=100C
Tc=25C
V
DS
=10V
Transconductance Variation & Drain
Current & Temperature
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
I
D
, Drain Current (A)
g
F
S
,
T
r
a
n
s
c
o
nd
uc
t
a
nc
e
(
S
)
Tc=25C
Tc=100C
V
DS
=10V
On Resistance Variation & Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20
40
60
80
100
120
140
Tc, Case Temperature (C)
R
D
S
(
O
N
) N
o
rma
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
si
st
a
n
ce
V
GS
=10V
I
D
=1A
I
D
=3A
I
D
=6A
Capacitance Characteristics
1
10
100
1000
10000
1
10
100
V
DS
, Drain-Source Voltage (V)
Ca
p
a
c
i
t
a
n
c
e
(
p
F
)
Ciss
Crss
Coss
Typical On-Resistance & Drain Current
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
4
6
8
10
I
D
, Drain Current (A)
R
D
S
(
ON
)
D
r
a
i
n
-
S
o
u
r
c
e
On
-
R
e
s
i
s
ta
n
c
e
V
GS
=10V
Tc=100C
Tc=25C
Typical On-Resistance & Drain Current
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
4
6
8
10
I
D
, Drain Current (A)
R
D
S
(
ON
)
D
r
a
i
n
-
S
o
u
r
c
e
On
-
R
e
s
i
s
ta
n
c
e
V
GS
=10V
V
GS
=15V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 4/5
HSMC Product Specification
Breakdown Voltage Variation & Temperature
0.95
1.00
1.05
1.10
1.15
1.20
25
50
75
100
125
Tc, Case Temperature (C)
B
V
D
S
S
,
N
o
r
m
a
l
iz
e
d
Dr
a
i
n
-
S
o
u
r
c
e
B
r
ea
k
dow
n
V
o
l
t
age
Body Diode Forward Voltage Variation &
Current & Temperature
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, Body Diode Forward Voltage (V)
I
S
,
R
ev
er
s
e
D
r
ai
n
C
u
r
r
en
t
(
A
)
Tc=25C
Tc=100C
Maximum Safe Operating Area (TO-220 FP)
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
1000
10000
V
DS
,Drain-Source Voltage (V)
I
D
,
D
ra
i
n
-S
o
u
rc
e
C
u
r
r
e
n
t
(A
)
R
DS(on)
Line
Dc
100ms
10ms
1ms
100us
V
GS
=10V
Si ngle Pulse
Tc=25C
Dynamic Input /Output Characteristics
0
2
4
6
8
10
12
14
16
0
10
20
30
40
50
60
70
Total Gate Charge Qg (nC)
G
a
t
e
-
S
ou
r
c
e V
o
l
t
ag
e V
GS
(V
)
V
DD
=120V
V
DD
=240V
V
DD
=400V
I
D
=6A
Tc=25C
Transient Thermal Response Curve(TO-220FP)
0.01
0.10
1.00
0.1
1
10
100
1000
t 1 ,Time(ms)
r
(
t
)
N
o
r
m
al
i
z
ed E
f
f
e
c
t
i
v
e T
r
ans
i
ent
T
her
m
a
l
R
e
si
st
a
n
c
e
0.01
0.1
0.05
0.02
0.2
0.5
Single Pulse
R
JC(t) = r(t) * R
JC(t)
R
JC =2.46
C / W
t2
P(pk)
t1
TJ-TC=P*R
JC(t)
Duty Cycle, D=t1/t2
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 5/5
HSMC Product Specification
TO-220AB Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.2197
0.2949
5.58
7.49
I
-
*
0.1508
-
*
3.83
B
0.3299
0.3504
8.38
8.90
K
0.0295
0.0374
0.75
0.95
C
0.1732
0.185
4.40
4.70
M
0.0449
0.0551
1.14
1.40
D
0.0453
0.0547
1.15
1.39
N
-
*
0.1000
-
*
2.54
E
0.0138
0.0236
0.35
0.60
O
0.5000
0.5618
12.70
14.27
G
0.3803
0.4047
9.66
10.28
P
0.5701
0.6248
14.48
15.87
H
-
*
0.6398
-
*
16.25
Notes :
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
4
Style : Pin 1.Gate 2.Drain 3.Source
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
Marking :
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Date Code
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Rank