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Электронный компонент: HWF1686YC

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HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
Features
Output Power: P
1dB
=30dBm(typ.)
High Gain: G
L
=16dB(typ.)
High Efficiency: PAE=45%(typ.)
High Linearity: IP
3
=45dBm(typ.)
Description
Designed for various RF and Microwave
applications, the HWF1686YC is a
medium power GaAs MESFET chip with 2
mm gate width and 0.7 m gate length.
Absolute Maximum Ratings
V
DS
Drain to Source Voltage
+15V
V
GS
Gate to Source Voltage
-5V
I
D
Drain
Current
I
DSS
I
G
Gate
Current
2mA
T
CH
Channel
Temperature 175
C
T
STG
Storage Temperature
-65 to +175
C
P
T
*
Power
Dissipation
5.4W
* mounted on an infinite heat sink
Outline Dimensions
650
435
215
0.0
0.0
58.5
344 .5
400
S ource
S ource
1
2
3
4
Electrical Specifications
(T
A
=25
C)
Symbol Parameters
Conditions
Units
Min.
Typ.
Max.
I
DSS
Saturated Drain Current
V
DS
=3V, V
GS
=0V mA
300
400
600
V
P
Pinch-off Voltage
V
DS
=3V, I
DS
=20mA V
-3.5
-2.0
-1.5
g
m
Transconductance V
DS
=3V, I
DS
=200mA mS
-
200
-
R
th
Thermal Resistance
Channel to Case
C/W - 20 28
P
1dB
Output Power @1dB Gain
dBm
29.0
30.0
-
G
L
Linear Power Gain
dB
15
16
-
PAE
Power-added Efficiency (P
out
= P
1dB
)
V
DS
=10V
I
DS
=0.5I
DSS
% - 45 -
IP
3
Third-order Intercept Point
*
f=2.4GHz dBm
-
45
-
*: Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP
3

Bonding Manner
Gate, drain, pad: 1 wire on each pad
Source pad: 2 wires on each side
Bond Pads:
1 to 2: Gate
3 to 4: Drain
Unit :
m
Thickness: 53
5
All Bond Pads:
60 x 60
Source electrodes are connected
to the bottom of the chip by
HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
Typical Performance (T
A
=25
C)
Output Power, Efficiency & Gain vs. Input Power
V
DS
=10V, I
DS
=0.5I
DSS

f=2.4GHz
Power Derating Curve
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
P
out
add
add
(%)
G
a
i
n

(
d
B
)
P
out
(dBm
)
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
200
HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
S-Parameters
(Common Source, T
A
=25
C, V
DS
=10V, I
DS
=0.5I
DSS
)
Freq
S
11
S
21
S
12
S
22
(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
0.5
0.954
-34.67 7.226
155.21 0.014
69.81 0.447
-19.70
0.6
0.951 -43.74 6.984 150.54 0.017 67.23 0.437 -18.31
0.7
0.961 -49.94 6.840 146.64 0.019 64.68 0.429 -21.07
0.8
0.948 -56.83 6.627 142.25 0.021 61.63 0.419 -21.92
0.9
0.952 -62.89 6.439 138.64 0.022 58.12 0.413 -23.65
1.0
0.935 -68.75 6.249 134.81 0.024 56.88 0.410 -25.63
1.1
0.919 -74.49 6.062 130.93 0.026 53.94 0.402 -27.73
1.2
0.923 -79.55 5.877 127.63 0.027 51.75 0.396 -29.80
1.3
0.912 -84.11 5.683 124.29 0.028 49.51 0.392 -32.16
1.4
0.910 -88.83 5.500 121.14 0.029 47.65 0.386 -33.77
1.5
0.906 -93.24 5.323 118.15 0.030 45.96 0.384 -35.69
1.6
0.897 -97.51 5.155 115.23 0.032 44.48 0.382 -37.44
1.7
0.895 -101.56 4.985 112.39 0.032 42.75 0.376 -39.23
1.8
0.891 -105.51 4.828 109.72 0.033 40.58 0.372 -40.59
1.9
0.890 -109.19 4.675 107.11 0.033 39.47 0.369 -42.16
2.0
0.885 -112.59 4.527 104.59 0.034 38.99 0.368 -43.84
2.1
0.881 -115.71 4.377 102.10 0.034 37.41 0.363 -45.32
2.2
0.882 -119.35 4.247 99.79
0.035 36.06 0.363 -47.31
2.3
0.877 -122.09 4.127 97.46
0.035 35.40 0.361 -48.47
2.4
0.875 -124.98 4.004 95.30
0.035 34.21 0.359 -50.11
2.5
0.872 -127.84 3.884 93.16
0.035 33.53 0.356 -51.75
2.6
0.872 -130.32 3.770 91.12
0.036 32.95 0.354 -53.12
2.7
0.871 -132.93 3.667 88.97
0.036 32.08 0.354 -54.99
2.8
0.868 -135.21 3.563 87.05
0.036 31.42 0.352 -56.45
2.9
0.868 -137.65 3.468 85.04
0.036 30.69 0.354 -58.18
3.0
0.866 -139.91 3.376 83.18
0.036 30.10 0.351 -59.75
4.0
0.864 -158.30 2.637 65.91
0.035 28.12 0.360 -76.06
5.0
0.868 -171.82 2.131 50.92
0.034 29.66 0.387 -91.99
6.0
0.875 177.44 1.762 37.01
0.034 33.69 0.429 -106.97
7.0
0.885 168.64 1.482 24.35
0.035 37.70 0.479 -120.20
8.0
0.893 161.14 1.256 12.37
0.037 40.81 0.533 -131.61
9.0
0.900 154.58 1.076 1.23
0.039 41.73 0.587 -141.27
10.0
0.906 148.43 0.929 -9.39
0.042 40.54 0.632 -149.91