HWL26NPB
L-Band GaAs Power FET
Autumn 2002
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
Features
Plastic Packaged GaAs Power FET
Suitable for Commercial Wireless
Applications
High
Efficiency
3V to 6V Operation
Description
The HWL26NPB is a medium Power GaAs FET using
surface mount type plastic package for various L-Band
applications. It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
Absolute Maximum Ratings
V
DS
Drain to Source Voltage
+7V
V
GS
Gate to Source Voltage
-5V
I
D
Drain
Current
I
DSS
I
G
Gate
Current
1mA
T
CH
Channel
Temperature
150
C
T
STG
Storage Temperature
-65 to +150
C
P
T
Power Dissipation
0.7 W
Outline Dimensions
Electrical Specifications
(T
A
=25
C) f=1900 MHz for all RF Tests
1
2
3
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
PB Package (SOT-23)
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
I
DSS
Saturated Current at V
DS
=5V, V
GS
=0V mA
150
220
-
V
P
Pinch-off Voltage at V
DS
=5V, I
D
=11mA
V -3.5 -2.0 -1.5
g
m
Transconductance at V
DS
=5V, I
D
=110mA mS - 120 -
R
th
Thermal
Resistance
C/W - 100 -
P
1dB
Power Output at Test Points
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
dBm
21.0
23.0
21.5
24.5
-
-
G
1dB
Gain at 1dB Compression Point
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
dB
9.0
10.0
10.0
11.0
-
-
PAE
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
%
40.0
45.0
-
-
HWL26NPB
L-Band GaAs Power FET
Autumn 2002
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
Typical Performance at 25
C
Output Power & Efficiency vs Vds
@ f=0.9GHz,Ids=110mA
0
5
10
15
20
25
30
1
2
3
4
5
6
Vds (V)
Po (dBm)
0
10
20
30
40
50
60
PAE (%)
Po
PAE
Output Power & Efficiency vs Vds
@ f=1.9GHz,Ids=110mA
0
5
10
15
20
25
30
1
2
3
4
5
6
Vds (V)
Po (dBm)
0
10
20
30
40
50
60
PAE (%)
Po
PAE
HWL26NPB
L-Band GaAs Power FET
Autumn 2002
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
Pin (dBm)
Po (dBm)
0
10
20
30
40
50
60
Gain
PAE (%)
Po
Gain
Eff
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
0
5
10
15
20
25
-8
-4
0
4
8
12
Pin (dBm)
Po (dBm)
0
10
20
30
40
50
60
Gain
PAE (%)
Po
Gain
Eff
HWL26NPB
L-Band GaAs Power FET
Autumn 2002
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
18
Pin (dBm)
Po (dBm)
0
10
20
30
40
50
60
Gain
PAE (%)
Po
Gain
Eff
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V
0
5
10
15
20
25
-8
-6
-4
-2
0
2
4
6
8
10
Pin (dBm)
Po (dBm)
0
10
20
30
40
50
60
Gain
PAE (%)
Po
Gain
Eff
HWL26NPB
L-Band GaAs Power FET
Autumn 2002
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=110mA
0
5
10
15
20
25
0.7
0.8
0.9
1.0
1.1
f (GHz)
Po (dBm)
0
10
20
30
40
50
60
Gain
PAE (%)
Po
Gain
PAE
Output Power & Efficiency & Gain vs Frequency
@ Vds=5V, Ids=110mA
0
5
10
15
20
25
30
1.6
1.7
1.8
1.9
2.0
2.1
f (GHz)
Po (dBm)
0
10
20
30
40
50
60
Gain
PAE (%)
Po
Gain
PAE
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